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浏览/检索结果: 共89条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Improving performance of semipolar (202¯1) light emitting diodes through reduction of threading dislocations by AlGaN/GaN superlattice interlayer 期刊论文  OAI收割 Journal of Crystal Growth, 2020, 卷号: 536 作者:  Song, Jie;  Choi, Joowon;  Han, Jung   |  收藏  |   Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC 期刊论文  OAI收割 CHINESE PHYSICS B, 2016, 卷号: 25, 期号: 5 作者:  Liang, Feng;  Chen, Ping;  Zhao, De-Gang;  Jiang, De-Sheng;  Zhao, Zhi-Juan 收藏  |   Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition 期刊论文  OAI收割 THIN SOLID FILMS, 2014, 卷号: 564, 期号: 0, 页码: 135-139 作者:  Yang H(杨辉) 收藏  |   Effects of temperature and substrate miscut on the crystalline quality of metamorphic AlInAs layers grown on GaAs substrate 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2013, 卷号: 381, 期号: 0, 页码: 70-76 作者:  Yu, SZ(于淑珍);  Yang, H(杨辉);  Dong, JR(董建荣);  Zhao, YM(赵勇明) 收藏  |   Tilt generation and phase separation in metamorphic GaInP buffers grown on GaAs substrates by metal-organic chemical vapor deposition 期刊论文  OAI收割 J. Crystal Growth, 2012, 卷号: 49, 期号: 43, 页码: 101 作者:  S.Z. Yu（于淑珍）;  Y.M. Zhao（赵勇明）;  H. Yang(杨辉) 收藏  |   Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD) 期刊论文  OAI收割 Journal of Crystal Growth, 2012, 卷号: 348, 期号: 1, 页码: 25-30 作者:  S.M. Zhang(张书明);  Y.M. Fan(范亚明);  B.S. Zhang(张宝顺);  H. Yang(杨辉) 收藏  |   The Effect of AlN Nucleation Temperature on the Growth of AlN Films via Metalorganic Chemical Vapor Deposition 期刊论文  OAI收割 JOURNAL OF ELECTRONIC MATERIALS, 2012, 卷号: 41, 期号: 3, 页码: 466-470 Wang, H; Li, SL; Xiong, H; Wu, ZH; Dai, JN; Tian, Y; Fang, YY; Chen, CQ 收藏  |   Mocvd growth of a-plane inn films on r-al2o3 with different buffer layers 期刊论文  iSwitch采集 Journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117 作者:  Zhang, Biao;  Song, Huaping;  Wang, Jun;  Jia, Caihong;  Liu, Jianming 收藏  |   MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文  OAI收割 journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117 作者:  Jia CH;  Song HP 收藏  |   Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties 期刊论文  OAI收割 Physica B-Condensed Matter, 2010, 卷号: 405, 期号: 22, 页码: 4668-4672 作者:  Yang H (杨辉);  Zhang SM(张书明) 收藏  |