机构

• 半导体研究所 [9]
• 高能物理研究所 [1]
• 近代物理研究所 [1]

采集方式

• OAI收割 [7]
• iSwitch采集 [4]

内容类型

• 期刊论文 [9]
• 会议论文 [2]

发表日期

• 2017 [1]
• 2009 [1]
• 2006 [2]
• 2005 [1]
• 2003 [2]
• 2002 [2]
• 更多

学科主题

• 半导体物理 [4]
• 光电子学 [1]
• 半导体材料 [1]

筛选

浏览/检索结果: 共11条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Identifying defect energy levels using dlts under different electron irradiation conditions 期刊论文  iSwitch采集 Nuclear science and techniques, 2017, 卷号: 28, 期号: 12, 页码: 7 作者:  Guo, Chun-Sheng;  Wang, Ruo-Min;  Zhang, Yu-Wei;  Pei, Guo-Xi;  Feng, Shi-Wei 收藏  |  浏览/下载：46/0  |  提交时间：2019/04/23 Electron irradiation  Deep level transient spectroscopy (dlts)  Minority carrier life time  Silicon diode   Charge-sensitive deep level transient spectroscopy of helium-ion-irradiated silicon, as-irradiated and after thermal annealing 期刊论文  OAI收割 CHINESE PHYSICS B, 2009, 卷号: 18, 期号: 1, 页码: 246-250 作者:  Li Bing-Sheng;  Zhang Hong-Hua;  Zhou Li-Hong;  Yang Yi-Tao;  Zhang Chong-Hong   |  收藏  |  浏览/下载：12/0  |  提交时间：2009/11/20 helium-ion irradiation  defect activation energy  charge-sensitive deep level transient spectroscopy   Deep level transient spectroscopy studies of Er and Pr implanted GaN films 期刊论文  OAI收割 acta physica sinica, 2006, 卷号: 55, 期号: 3, 页码: 1407-1412 Song SF; Chen WD; Xu ZJ; Xu XR 收藏  |  浏览/下载：50/0  |  提交时间：2010/04/11 GaN  Er  Pr-implautation  deep level transient spectroscopy  N-TYPE GAN  DEFECTS  EPITAXY  TRAPS   Growth of high quality semi-insulating InP single crystal by suppression of compensation defects 期刊论文  OAI收割 journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 75-77 Zhao YW; Dong ZY; Duan ML; Sun WR; Yang ZX 收藏  |  浏览/下载：46/0  |  提交时间：2010/04/11 indium phosphide  defect  semi-insualting  STIMULATED CURRENT SPECTROSCOPY  CURRENT TRANSIENT SPECTROSCOPY  SEMI-INSULATING INP  DEEP-LEVEL DEFECTS  FE   Improvement of the electrical property of semi-insulating InP by suppression of compensation defects 会议论文  OAI收割 17th international conference on indium phosphide and related materials, glasgow, scotland, may 08-12, 2005 Zhao, YW; Dong, ZY 收藏  |  浏览/下载：234/68  |  提交时间：2010/03/29 ENCAPSULATED CZOCHRALSKI INP  SEMICONDUCTOR COMPOUND-CRYSTALS  STIMULATED CURRENT SPECTROSCOPY  CURRENT TRANSIENT SPECTROSCOPY  DEEP-LEVEL DEFECTS  ANNEALING AMBIENT  POINT-DEFECTS  FE  PHOSPHIDE  DONORS   Low-frequency noise properties of gan schottky barriers deposited on intermediate temperature buffer layers 期刊论文  iSwitch采集 Materials science in semiconductor processing, 2003, 卷号: 6, 期号: 5-6, 页码: 523-525 作者:  Leung, BH;  Fong, WK;  Surya, C;  Lu, LW;  Ge, WK 收藏  |  浏览/下载：35/0  |  提交时间：2019/05/12 Gan  Low-frequency noise  Deep levels  Deep level transient fourier spectroscopy   Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers 会议论文  OAI收割 1st international symposium on point defect and stoichiometry, sendai, japan, mar 20-22, 2003 Leung BH; Fong WK; Surya C; Lu LW; Ge WK 收藏  |  浏览/下载：30/0  |  提交时间：2010/10/29 GaN  low-frequency noise  deep levels  deep level transient Fourier spectroscopy  DEVICES   Characterization of deep levels in pt-gan schottky diodes deposited on intermediate-temperature buffer layers 期刊论文  iSwitch采集 Ieee transactions on electron devices, 2002, 卷号: 49, 期号: 2, 页码: 314-318 作者:  Leung, BH;  Chan, NH;  Fong, WK;  Zhu, CF;  Ng, SW 收藏  |  浏览/下载：28/0  |  提交时间：2019/05/12 Deep level transient fourier spectroscopy  (dltfs)  Gallium nitride (gan)  Intermediate-temperature buffer layer (itbf)  Low-frequency noise   Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers 期刊论文  OAI收割 ieee transactions on electron devices, 2002, 卷号: 49, 期号: 2, 页码: 314-318 Leung BH; Chan NH; Fong WK; Zhu CF; Ng SW; Lui HF; Tong KY; Surya C; Lu LW; Ge WK 收藏  |  浏览/下载：142/0  |  提交时间：2010/08/12 deep level transient Fourier spectroscopy  (DLTFS)  gallium nitride (GaN)  intermediate-temperature buffer layer (ITBF)  low-frequency noise  RESONANT-TUNNELING DIODES  GENERATION-RECOMBINATION NOISE  RANDOM-TELEGRAPH NOISE  ULTRAVIOLET PHOTODETECTORS  DEVICES   The improvement characteristics of homoepitaxial gaas grown by atomic hydrogen-assisted molecular beam epitaxy 期刊论文  iSwitch采集 Journal of infrared and millimeter waves, 2000, 卷号: 19, 期号: 3, 页码: 191-193 作者:  Wang, HL;  Zhu, HJ;  Ning, D;  Wang, H;  Wang, XD 收藏  |  浏览/下载：34/0  |  提交时间：2019/05/12 Atomic hydrogen-assisted molecular beam epitaxy  Deep level transient spectroscopy  Deep level defects