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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [10]
苏州纳米技术与纳米仿... [1]
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OAI收割 [7]
iSwitch采集 [4]
内容类型
期刊论文 [10]
会议论文 [1]
发表日期
2013 [1]
2007 [2]
2004 [2]
2003 [2]
1999 [2]
1996 [2]
更多
学科主题
半导体材料 [4]
半导体物理 [2]
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High-quality InGaN epilayers grown by PA-MBE and abnormal incorporation behavior of Indium into InGaN
期刊论文
OAI收割
ACTA PHYSICA SINICA, 2013, 卷号: 62, 期号: 8
作者:
Yang, H(杨辉)
;
Wang, JF(王建峰)
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2014/01/13
InGaN epilayer
plasma-assisted molecular beam epitaxy
indium incorporation
crystalline quality
Morphological and electrical properties of inp grown by solid source molecular beam epitaxy
期刊论文
iSwitch采集
Journal of crystal growth, 2007, 卷号: 299, 期号: 2, 页码: 243-247
作者:
Pi, Biao
;
Shu, Yongchun
;
Lin, Yaowang
;
Sun, Jiaming
;
Qu, Shengchun
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2019/05/12
Electron concentration
High electron mobility
Surface morphology
Inp epilayer
Molecular beam epitaxy
Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection
会议论文
OAI收割
6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006
Liu, XF (Liu, X. F.)
;
Sun, GS (Sun, G. S.)
;
Zhao, YM (Zhao, Y. M.)
;
Ning, J (Ning, J.)
;
Li, JY (Li, J. Y.)
;
Wang, L (Wang, L.)
;
Zhao, WS (Zhao, W. S.)
;
Luo, MC (Luo, M. C.)
;
Li, JM (Li, J. M.)
收藏
  |  
浏览/下载:110/26
  |  
提交时间:2010/03/29
homoepitaxy
4H-SiC
multi-epilayer
UV detection
p(+)-pi-n(-)
ULTRAVIOLET PHOTODETECTOR
EPITAXIAL-GROWTH
Photoluminescence characteristics of gaassbn/gaas epilayers lattice-matched to gaas substrates
期刊论文
iSwitch采集
Solid state communications, 2004, 卷号: 132, 期号: 10, 页码: 707-711
作者:
Bian, LF
;
Jiang, DS
;
Tan, PH
;
Lu, SL
;
Sun, BQ
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2019/05/12
Gaassbn epilayer
Pl spectra
Rta
Photoluminescence characteristics of GaAsSbN/GaAs epilayers lattice-matched to GaAs substrates
期刊论文
OAI收割
solid state communications, 2004, 卷号: 132, 期号: 10, 页码: 707-711
作者:
Tan PH
;
Jiang DS
收藏
  |  
浏览/下载:165/55
  |  
提交时间:2010/03/09
GaAsSbN epilayer
The effects of rapid thermal annealing on the optical properties of zn1-xmnxse epilayer grown by mocvd on gaas substrate
期刊论文
iSwitch采集
Journal of crystal growth, 2003, 卷号: 249, 期号: 3-4, 页码: 538-543
作者:
Lu, SL
;
Wang, JN
;
Huang, JS
;
Bian, LF
;
Jiang, DS
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2019/05/12
Photoluminescence
Metalorganic chemical vapor deposition
Epilayer
Semiconducting ii-vi materials
The effects of rapid thermal annealing on the optical properties of Zn1-xMnxSe epilayer grown by MOCVD on GaAs substrate
期刊论文
OAI收割
journal of crystal growth, 2003, 卷号: 249, 期号: 3-4, 页码: 538-543
作者:
Zhang JY
;
Jiang DS
收藏
  |  
浏览/下载:94/0
  |  
提交时间:2010/08/12
photoluminescence
metalorganic chemical vapor deposition
epilayer
semiconducting II-VI materials
MOLECULAR-BEAM EPITAXY
GAP
The effects of carbonized buffer layer on the growth of sic on si
期刊论文
iSwitch采集
Journal of crystal growth, 1999, 卷号: 201, 页码: 564-567
作者:
Wang, YS
;
Li, JM
;
Zhang, FF
;
Lin, LY
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/05/12
Si
Sic
Carbonization
Rheed
Single crystal epilayer
The effects of carbonized buffer layer on the growth of SiC on Si
期刊论文
OAI收割
journal of crystal growth, 1999, 卷号: 201, 期号: 0, 页码: 564-567
Wang YS
;
Li JM
;
Zhang FF
;
Lin LY
收藏
  |  
浏览/下载:45/0
  |  
提交时间:2010/08/12
Si
SiC
carbonization
RHEED
single crystal epilayer
HYDROCARBON RADICALS
SI(001) SURFACE
BEAM
HETEROEPITAXIAL GROWTH
Characterization and improvement of GaAs layers grown on Si using an ultrathin a-Si film as a buffer layer
期刊论文
OAI收割
japanese journal of applied physics part 2-letters, 1996, 卷号: 35, 期号: 8a, 页码: l960-l963
Hao MS
;
Shao CL
;
Soga T
;
Jimbo T
;
Umeno M
;
Liang JW
;
Zheng LX
;
Xiao ZB
;
Xiao JF
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2010/11/17
GaAs/Si epilayer
a-Si buffer layer
deep level
MOCVD
DISLOCATION DENSITY