中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共11条,第1-10条 帮助

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High-quality InGaN epilayers grown by PA-MBE and abnormal incorporation behavior of Indium into InGaN 期刊论文  OAI收割
ACTA PHYSICA SINICA, 2013, 卷号: 62, 期号: 8
作者:  
Yang, H(杨辉);  Wang, JF(王建峰)
收藏  |  浏览/下载:23/0  |  提交时间:2014/01/13
Morphological and electrical properties of inp grown by solid source molecular beam epitaxy 期刊论文  iSwitch采集
Journal of crystal growth, 2007, 卷号: 299, 期号: 2, 页码: 243-247
作者:  
Pi, Biao;  Shu, Yongchun;  Lin, Yaowang;  Sun, Jiaming;  Qu, Shengchun
收藏  |  浏览/下载:32/0  |  提交时间:2019/05/12
Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection 会议论文  OAI收割
6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006
Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Zhao, YM (Zhao, Y. M.); Ning, J (Ning, J.); Li, JY (Li, J. Y.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Luo, MC (Luo, M. C.); Li, JM (Li, J. M.)
收藏  |  浏览/下载:110/26  |  提交时间:2010/03/29
Photoluminescence characteristics of gaassbn/gaas epilayers lattice-matched to gaas substrates 期刊论文  iSwitch采集
Solid state communications, 2004, 卷号: 132, 期号: 10, 页码: 707-711
作者:  
Bian, LF;  Jiang, DS;  Tan, PH;  Lu, SL;  Sun, BQ
收藏  |  浏览/下载:29/0  |  提交时间:2019/05/12
Photoluminescence characteristics of GaAsSbN/GaAs epilayers lattice-matched to GaAs substrates 期刊论文  OAI收割
solid state communications, 2004, 卷号: 132, 期号: 10, 页码: 707-711
作者:  
Tan PH;  Jiang DS
收藏  |  浏览/下载:165/55  |  提交时间:2010/03/09
The effects of rapid thermal annealing on the optical properties of zn1-xmnxse epilayer grown by mocvd on gaas substrate 期刊论文  iSwitch采集
Journal of crystal growth, 2003, 卷号: 249, 期号: 3-4, 页码: 538-543
作者:  
Lu, SL;  Wang, JN;  Huang, JS;  Bian, LF;  Jiang, DS
收藏  |  浏览/下载:30/0  |  提交时间:2019/05/12
The effects of rapid thermal annealing on the optical properties of Zn1-xMnxSe epilayer grown by MOCVD on GaAs substrate 期刊论文  OAI收割
journal of crystal growth, 2003, 卷号: 249, 期号: 3-4, 页码: 538-543
作者:  
Zhang JY;  Jiang DS
收藏  |  浏览/下载:94/0  |  提交时间:2010/08/12
The effects of carbonized buffer layer on the growth of sic on si 期刊论文  iSwitch采集
Journal of crystal growth, 1999, 卷号: 201, 页码: 564-567
作者:  
Wang, YS;  Li, JM;  Zhang, FF;  Lin, LY
收藏  |  浏览/下载:13/0  |  提交时间:2019/05/12
The effects of carbonized buffer layer on the growth of SiC on Si 期刊论文  OAI收割
journal of crystal growth, 1999, 卷号: 201, 期号: 0, 页码: 564-567
Wang YS; Li JM; Zhang FF; Lin LY
收藏  |  浏览/下载:45/0  |  提交时间:2010/08/12
Characterization and improvement of GaAs layers grown on Si using an ultrathin a-Si film as a buffer layer 期刊论文  OAI收割
japanese journal of applied physics part 2-letters, 1996, 卷号: 35, 期号: 8a, 页码: l960-l963
Hao MS; Shao CL; Soga T; Jimbo T; Umeno M; Liang JW; Zheng LX; Xiao ZB; Xiao JF
收藏  |  浏览/下载:20/0  |  提交时间:2010/11/17