机构

• 物理研究所 [8]
• 福建物质结构研究所 [2]
• 半导体研究所 [2]

采集方式

• OAI收割 [12]

内容类型

• 期刊论文 [11]
• 会议论文 [1]

发表日期

• 2008 [2]
• 2005 [1]
• 2004 [4]
• 2003 [1]
• 2001 [4]

学科主题

• 半导体材料 [2]

筛选

浏览/检索结果: 共12条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Electrophilic Reaction Mechanism for Alkyl Monolayer Formation Initiated at Isolated Dangling Bonds of the H-GaN (0001) Surface: A Periodic Density Functional Theory Study 期刊论文  OAI收割 Journal of Physical Chemistry C, 2008, 卷号: 112, 期号: 43, 页码: 16932-16937 C. L. Hu; J. Q. Li; Y. Chen and W. F. Wang 收藏  |   First-principles calculations of ethanethiol adsorption and decomposition on GaN (0001) surface 期刊论文  OAI收割 Applied Surface Science, 2008, 卷号: 254, 期号: 20, 页码: 6514-6520 C. L. Hu; Y. Chen; J. Q. Li and Y. F. Zhang 收藏  |   Surface and interface studies of GaN epitaxy on Si(111) via ZrB2 buffer layers 期刊论文  OAI收割 PHYSICAL REVIEW LETTERS, 2005, 卷号: 95, 期号: 26 Yamada-Takamura, Y; Wang, ZT; Fujikawa, Y; Sakurai, T; Xue, QK; Tolle, J; Liu, PL; Chizmeshya, AVG; Kouvetakis, J; Tsong, IST 收藏  |   Role of gallium wetting layer in high-quality ZnO growth on sapphire(0001) substrates 期刊论文  OAI收割 SCIENCE IN CHINA SERIES G-PHYSICS MECHANICS & ASTRONOMY, 2004, 卷号: 47, 期号: 5, 页码: 612 Zeng, ZQ; Wang, Y; Du, XL; Mei, ZX; Kong, XH; Jia, JF; Xue, QK; Zhang, Z 收藏  |   Effect of sapphire substrate nitridation on the elimination of rotation domains in ZnO epitaxial films 期刊论文  OAI收割 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2004, 卷号: 37, 期号: 21, 页码: 3058 Ying, MJ; Du, XL; Mei, ZX; Zeng, ZQ; Zheng, H; Wang, Y; Jia, JF; Zhang, Z; Xue, QK 收藏  |   Scanning tunneling microscopy studies of III-nitride thin film heteroepitaxial growth 期刊论文  OAI收割 PHYSICS-USPEKHI, 2004, 卷号: 47, 期号: 4, 页码: 371 Bakhtizin, RZ; Xue, QZ; Xue, QK; Wu, KH; Sakurai, T 收藏  |   Bilayer-by-bilayer etching of 6H-GaN(0001) with Cl 期刊论文  OAI收割 SURFACE SCIENCE, 2004, 卷号: 561, 期号: 2-3, 页码: L213 Kuwano, S; Xue, QZ; Asano, Y; Fujikawa, Y; Xue, QK; Nakayama, KS; Nagao, T; Sakurai, T 收藏  |   InN island shape and its dependence on growth condition of molecular-beam epitaxy 期刊论文  OAI收割 APPLIED PHYSICS LETTERS, 2003, 卷号: 83, 期号: 25, 页码: 5157 Cao, YG; Xie, MH; Liu, Y; Ng, YF; Wu, HS; Tong, SY 收藏  |   N-plasma assisted molecular beam epitaxy of GaN(000(1)over-bar) thin films on 6H-SiC(000(1)over-bar) 期刊论文  OAI收割 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 卷号: 40, 期号: 6B, 页码: 4388 Xue, QZ; Xue, QK; Kuwano, S; Nakayama, K; Sakurai, T 收藏  |   Growth mode and surface reconstruction of GaN(000(1)over-bar) thin films on 6H-SiC(000(1)over-bar) 期刊论文  OAI收割 CHINESE PHYSICS, 2001, 卷号: 10, 页码: S157 Xue, QZ; Xue, QK; Kuwano, S; Nakayama, K; Sakurai, T 收藏  |