中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
采集方式
内容类型
发表日期
学科主题
筛选

浏览/检索结果: 共20条,第1-10条 帮助

条数/页: 排序方式:
Atomistic Insights on Surface Quality Control via Annealing Process in AlGaN Thin Film Growth 期刊论文  OAI收割
NANOMATERIALS, 2023, 卷号: 13, 期号: 8, 页码: 1382
作者:  
Peng Q(彭庆);  Ma ZW(马知未);  Cai, Shixian;  Zhao S(赵帅);  Chen, Xiaojia
  |  收藏  |  浏览/下载:10/0  |  提交时间:2023/06/15
Annihilation and Regeneration of Defects in (11(2)over-bar2) Semipolar AlN via High-Temperature Annealing and MOVPE Regrowth 期刊论文  OAI收割
CRYSTAL GROWTH & DESIGN, 2021, 卷号: 21, 期号: 5, 页码: 2911-2919
作者:  
Chen, Li;  Lin, Wei;  Chen, Hangyang;  Xu, Houqiang
  |  收藏  |  浏览/下载:27/0  |  提交时间:2021/12/01
Light Extraction Efficiency Optimization of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes 期刊论文  OAI收割
Ecs Journal of Solid State Science and Technology, 2020, 卷号: 9, 期号: 4, 页码: 5
作者:  
H. Wan,S. J. Zhou,S. Y. Lan and C. Q. Gui
  |  收藏  |  浏览/下载:30/0  |  提交时间:2021/07/06
Tuning photonic crystal fabrication by nanosphere lithography and surface treatment of AlGaN-based ultraviolet light-emitting diodes 期刊论文  OAI收割
MATERIALS & DESIGN, 2018, 卷号: 160, 页码: 661-670
作者:  
Chee, Kuan W. A.;  Guo, Wei;  Wang, John R.;  Wang, Yong;  Chen, Yue-e
  |  收藏  |  浏览/下载:19/0  |  提交时间:2019/12/18
Room-temperature continuous-wave electrically pumped InGaN GaN quantum well blue laser diode directly grown on Si 期刊论文  OAI收割
Light-Science & Applications, 2018, 卷号: 7, 页码: 6
作者:  
Sun, Y.;  Zhou, K.;  Feng, M. X.;  Li, Z. C.
  |  收藏  |  浏览/下载:7/0  |  提交时间:2019/09/17
Enhancing light coupling and emission efficiencies of AlGaN thin film and AlGaN/GaN multiple quantum wells with periodicity-wavelength matched nanostructure array 期刊论文  OAI收割
NANOSCALE, 2017, 卷号: 9, 期号: 40, 页码: 15477-15483
作者:  
Guo, Wei;  Yang, Zhenhai;  Li, Junmei;  Yang, Xi;  Zhang, Yun
  |  收藏  |  浏览/下载:29/0  |  提交时间:2017/12/25
Stress evolution in AlN and GaN grown on Si(111): experiments and theoretical modeling 期刊论文  OAI收割
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2016, 卷号: 27, 期号: 2
作者:  
Dai, YQ;  Li, SM;  Gao, HW;  Wang, WH;  Sun, Q(孙钱)
收藏  |  浏览/下载:18/0  |  提交时间:2017/03/11
Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs 期刊论文  OAI收割
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 卷号: 62, 期号: 10, 页码: 8
作者:  
Hua, MY;  Liu, C;  Yang, S;  Liu, SH;  Fu, K
收藏  |  浏览/下载:30/0  |  提交时间:2015/12/31
Effects of rapid thermal annealing on the properties of aln films deposited by peald on algan/gan heterostructures 期刊论文  iSwitch采集
Rsc advances, 2015, 卷号: 5, 期号: 47, 页码: 37881-37886
作者:  
Cao, Duo;  Cheng, Xinhong;  Xie, Ya-Hong;  Zheng, Li;  Wang, Zhongjian
收藏  |  浏览/下载:44/0  |  提交时间:2019/05/10
Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy 期刊论文  OAI收割
applied surface science, 2011, 卷号: 257, 期号: 18, 页码: 8110-8112
作者:  
Shi K;  Jiao CM;  Song HP
收藏  |  浏览/下载:92/7  |  提交时间:2011/07/05