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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [10]
宁波材料技术与工程研... [3]
苏州纳米技术与纳米仿... [2]
长春光学精密机械与物... [2]
力学研究所 [1]
中国科学院大学 [1]
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OAI收割 [16]
iSwitch采集 [4]
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期刊论文 [18]
专利 [1]
会议论文 [1]
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2023 [1]
2021 [1]
2020 [1]
2018 [2]
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半导体材料 [3]
光电子学 [2]
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Atomistic Insights on Surface Quality Control via Annealing Process in AlGaN Thin Film Growth
期刊论文
OAI收割
NANOMATERIALS, 2023, 卷号: 13, 期号: 8, 页码: 1382
作者:
Peng Q(彭庆)
;
Ma ZW(马知未)
;
Cai, Shixian
;
Zhao S(赵帅)
;
Chen, Xiaojia
  |  
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2023/06/15
AlGaN thin film
molecular dynamics simulations
laser annealing
atomistic structure
Annihilation and Regeneration of Defects in (11(2)over-bar2) Semipolar AlN via High-Temperature Annealing and MOVPE Regrowth
期刊论文
OAI收割
CRYSTAL GROWTH & DESIGN, 2021, 卷号: 21, 期号: 5, 页码: 2911-2919
作者:
Chen, Li
;
Lin, Wei
;
Chen, Hangyang
;
Xu, Houqiang
  |  
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2021/12/01
SAPPHIRE
GROWTH
SUPERLATTICES
QUALITY
ALGAN
AIN
Light Extraction Efficiency Optimization of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes
期刊论文
OAI收割
Ecs Journal of Solid State Science and Technology, 2020, 卷号: 9, 期号: 4, 页码: 5
作者:
H. Wan,S. J. Zhou,S. Y. Lan and C. Q. Gui
  |  
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2021/07/06
Tuning photonic crystal fabrication by nanosphere lithography and surface treatment of AlGaN-based ultraviolet light-emitting diodes
期刊论文
OAI收割
MATERIALS & DESIGN, 2018, 卷号: 160, 页码: 661-670
作者:
Chee, Kuan W. A.
;
Guo, Wei
;
Wang, John R.
;
Wang, Yong
;
Chen, Yue-e
  |  
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2019/12/18
EXTERNAL QUANTUM EFFICIENCY
THIN-FILM
EXTRACTION EFFICIENCY
SPONTANEOUS EMISSION
ENHANCEMENT
GAN
PHOTOLUMINESCENCE
WELLS
BLUE
ALN
Room-temperature continuous-wave electrically pumped InGaN GaN quantum well blue laser diode directly grown on Si
期刊论文
OAI收割
Light-Science & Applications, 2018, 卷号: 7, 页码: 6
作者:
Sun, Y.
;
Zhou, K.
;
Feng, M. X.
;
Li, Z. C.
  |  
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2019/09/17
x-ray-diffraction
high-power
gan
dislocation
relaxation
films
Optics
Enhancing light coupling and emission efficiencies of AlGaN thin film and AlGaN/GaN multiple quantum wells with periodicity-wavelength matched nanostructure array
期刊论文
OAI收割
NANOSCALE, 2017, 卷号: 9, 期号: 40, 页码: 15477-15483
作者:
Guo, Wei
;
Yang, Zhenhai
;
Li, Junmei
;
Yang, Xi
;
Zhang, Yun
  |  
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2017/12/25
Stress evolution in AlN and GaN grown on Si(111): experiments and theoretical modeling
期刊论文
OAI收割
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2016, 卷号: 27, 期号: 2
作者:
Dai, YQ
;
Li, SM
;
Gao, HW
;
Wang, WH
;
Sun, Q(孙钱)
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2017/03/11
Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs
期刊论文
OAI收割
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 卷号: 62, 期号: 10, 页码: 8
作者:
Hua, MY
;
Liu, C
;
Yang, S
;
Liu, SH
;
Fu, K
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2015/12/31
Gallium nitride
gate dielectric
low-pressure chemical vapor deposition (LPCVD)
silicon nitride
Effects of rapid thermal annealing on the properties of aln films deposited by peald on algan/gan heterostructures
期刊论文
iSwitch采集
Rsc advances, 2015, 卷号: 5, 期号: 47, 页码: 37881-37886
作者:
Cao, Duo
;
Cheng, Xinhong
;
Xie, Ya-Hong
;
Zheng, Li
;
Wang, Zhongjian
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2019/05/10
Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy
期刊论文
OAI收割
applied surface science, 2011, 卷号: 257, 期号: 18, 页码: 8110-8112
作者:
Shi K
;
Jiao CM
;
Song HP
收藏
  |  
浏览/下载:92/7
  |  
提交时间:2011/07/05
Valence band offset
GaN/diamond heterojunction
XPS
Conduction band offset
CHEMICAL-VAPOR-DEPOSITION
ALGAN/GAN HEMTS
DIAMOND
GAN
FILMS