机构

• 半导体研究所 [6]

采集方式

• OAI收割 [6]

内容类型

• 期刊论文 [6]

发表日期

• 2011 [6]

学科主题

• 半导体材料 [6]

筛选

浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体材料    发表日期：2011     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文  OAI收割 journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032 作者:  Pan X 收藏  |  浏览/下载：20/0  |  提交时间：2011/09/14 CHEMICAL-VAPOR-DEPOSITION  PHASE EPITAXY  ALN INTERLAYERS  FILMS  STRESS  LAYERS  DISLOCATIONS  REDUCTION  DENSITY  DIODES   Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN 期刊论文  OAI收割 applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: article no.102104 作者:  Deng QW 收藏  |  浏览/下载：46/5  |  提交时间：2011/07/05 QUANTUM-WELL-STRUCTURE  ALGAN/GAN HETEROSTRUCTURE  YELLOW LUMINESCENCE  DEEP LEVELS  TRAP  PERFORMANCE  FREQUENCY  EPILAYERS  ORIGIN  DIODES   Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文  OAI收割 semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016 Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW 收藏  |  浏览/下载：52/10  |  提交时间：2011/07/05 UNDOPED GALLIUM ANTIMONIDE  SELF-DIFFUSION  NATIVE DEFECTS  N-TYPE  CRYSTALS  CATHODOLUMINESCENCE  PHOTOLUMINESCENCE  SEMICONDUCTORS  SPECTROSCOPY  LUMINESCENCE   Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy 期刊论文  OAI收割 materials science in semiconductor processing, Materials Science in Semiconductor Processing, 2011, 2011 作者:  Hu, Qiang;  Wei, Tongbo;  Duan, Ruifei;  Yang, Jiankun;  Huo, Ziqiang   |  收藏  |  浏览/下载：30/0  |  提交时间：2012/06/14 Carrier concentration  Etching  Gallium alloys  Optical properties  Point defects  Raman spectroscopy  Semiconducting gallium compounds  Vapor phase epitaxy  Vapors  Carrier Concentration  Etching  Gallium Alloys  Optical Properties  Point Defects  Raman Spectroscopy  Semiconducting Gallium Compounds  Vapor Phase Epitaxy  Vapors   Influence of growth conditions on the V-defects in InGaN/GaN MQWs 期刊论文  OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 10, 页码: 103001, 103001 作者:  Ji, Panfeng;  Liu, Naixin;  Wei, Xuecheng;  Liu, Zhe;  Lu, Hongxi   |  收藏  |  浏览/下载：17/0  |  提交时间：2012/06/14 Gallium nitride  Growth temperature  Semiconductor quantum wells  Surface defects  Gallium Nitride  Growth Temperature  Semiconductor Quantum Wells  Surface Defects   The impact of annealing temperature on the structural and magnetization properties of Sm implanted GaN films 期刊论文  OAI收割 materials letters, MATERIALS LETTERS, 2011, 2011, 卷号: 65, 65, 期号: 4, 页码: 667-669, 667-669 作者:  Sun LL;  Liu C;  Li JM;  Wang JX;  Yan FW   |  收藏  |  浏览/下载：62/7  |  提交时间：2011/07/05 Diluted magnetic semiconductors (DMSs)  Ion implantation  Room-temperature ferromagnetic properties  ROOM-TEMPERATURE  Diluted Magnetic Semiconductors (Dmss)  Ion implantatIon  Room-temperature Ferromagnetic Properties  Room-temperature