机构

• 半导体研究所 [14]

采集方式

• OAI收割 [14]

内容类型

• 期刊论文 [14]

发表日期

• 2011 [1]
• 2009 [3]
• 2008 [1]
• 2007 [1]
• 2006 [1]
• 2003 [1]
• 更多

学科主题

• 半导体物理 [14]

筛选

浏览/检索结果: 共14条，第1-10条 帮助 限定条件 学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Formation of shallow acceptors in ZnO doped by lithium with the addition of nitrogen 期刊论文  OAI收割 journal of physics and chemistry of solids, Journal of Physics and Chemistry of Solids, 2011, 2011, 卷号: 72, 72, 期号: 6, 页码: 725-729, 725-729 作者:  Gai, Yanqin;  Tang, Gang;  Li, Jingbo;  Gai, Y.(yqgai@semi.ac.cn)   |  收藏  |  浏览/下载：32/0  |  提交时间：2012/06/14 Activation energy  Binding energy  Calculations  Complexation  Doping(additives)  Electronic structure  Zinc  Zinc oxide  Activation Energy  Binding Energy  Calculations  Complexation  Doping(Additives)  Electronic Structure  Zinc  Zinc Oxide   Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713 作者:  Zhang XW;  You JB;  Yin ZG 收藏  |  浏览/下载：70/1  |  提交时间：2010/03/08 annealing  carrier density  carrier mobility  diffusion  electrical conductivity  electrical resistivity  hydrogen  II-VI semiconductors  impurity states  interstitials  light transmission  plasma materials processing  semiconductor thin films  sputter deposition  vacancies (crystal)  visible spectra  wide band gap semiconductors  zinc compounds   Design of shallow acceptors in ZnO through compensated donor-acceptor complexes: A density functional calculation 期刊论文  OAI收割 physical review b, 2009, 卷号: 80, 期号: 15, 页码: art.no.153201 Gai YQ (Gai, Yanqin); Li JB (Li, Jingbo); Li SS (Li, Shu-Shen); Xia JB (Xia, Jian-Bai); Yan YF (Yan, Yanfa); Wei SH (Wei, Su-Huai) 收藏  |  浏览/下载：130/34  |  提交时间：2010/03/08 INITIO MOLECULAR-DYNAMICS   The bipolar doping of ZnS via native defects and external dopants 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 105, 期号: 11, 页码: art. no. 113704 作者:  Li JB 收藏  |  浏览/下载：131/30  |  提交时间：2010/03/08 AUGMENTED-WAVE METHOD  P-TYPE ZNO  POINT-DEFECTS  II-VI  NITROGEN  SEMICONDUCTORS  1ST-PRINCIPLES  COMPENSATION  ENHANCEMENT   MOCVD growth of InN using a GaN buffer 期刊论文  OAI收割 superlattices and microstructures, 2008, 卷号: 43, 期号: 2, 页码: 81-85 作者:   收藏  |  浏览/下载：51/1  |  提交时间：2010/03/08 surface   Influence of deep level defects on electrical compensation in semi-insulating InP materials 期刊论文  OAI收割 acta physica sinica, 2007, 卷号: 56, 期号: 2, 页码: 1167-1171 Yang, J (Yang Jun); Zhao, YW (Zhao You-Wen); Dong, ZY (Dong Zhi-Yuan); Deng, AH (Deng Ai-Hong); Miao, SS (Miao Shan-Shan); Wang, B (Wang Bo) 收藏  |  浏览/下载：31/0  |  提交时间：2010/03/29 InP   Design of shallow acceptors in ZnO: First-principles band-structure calculations 期刊论文  OAI收割 physical review b, 2006, 卷号: 74, 期号: 8, 页码: art.no.081201 Li J (Li Jingbo); Wei SH (Wei Su-Huai); Li SS (Li Shu-Shen); Xia JB (Xia Jian-Bai) 收藏  |  浏览/下载：23/0  |  提交时间：2010/04/11 P-TYPE ZNO  TOTAL-ENERGY CALCULATIONS  WAVE BASIS-SET  II-VI  ROOM-TEMPERATURE  THIN-FILMS  SEMICONDUCTORS  FABRICATION  DEFECTS  DEVICES   Green-light-emitting ZnSe nanowires fabricated via vapor phase growth 期刊论文  OAI收割 applied physics letters, 2003, 卷号: 82, 期号: 19, 页码: 3330-3332 Xiang B; Zhang HZ; Li GH; Yang FH; Su FH; Wang RM; Xu J; Lu GW; Sun XC; Zhao Q; Yu DP 收藏  |  浏览/下载：111/0  |  提交时间：2010/08/12 PHYSICAL EVAPORATION  QUANTUM WIRES  DOTS  DEPOSITION   Transient photoconductivity and its light-induced change of lightly boron-doped a-Si : H films 期刊论文  OAI收割 acta physica sinica, 2002, 卷号: 51, 期号: 1, 页码: 111-114 Zhang SB; Kong GL; Xu YY; Wang YQ; Diao HW; Liao XB 收藏  |  浏览/下载：92/12  |  提交时间：2010/08/12 amorphous silicon  transient photoconductivity  light-induced change   Residual donors and compensation in metalorganic chemical vapor deposition as-grown n-GaN 期刊论文  OAI收割 journal of applied physics, 2001, 卷号: 90, 期号: 12, 页码: 6130-6134 Xu XL; Liu HT; Shi CS; Zhao YW; Fung S; Beling CD 收藏  |  浏览/下载：126/15  |  提交时间：2010/08/12 LIGHT-EMITTING DIODES  GALLIUM NITRIDE  YELLOW LUMINESCENCE  ELECTRON  PHOTOLUMINESCENCE  EPILAYERS  VACANCIES  INTERFACE  MECHANISM  ENERGY