机构

• 半导体研究所 [14]

采集方式

• OAI收割 [14]

内容类型

• 期刊论文 [12]
• 会议论文 [2]

发表日期

• 2011 [1]
• 2009 [1]
• 2006 [3]
• 2005 [1]
• 2004 [1]
• 2003 [1]
• 更多

学科主题

• 半导体材料 [14]

筛选

浏览/检索结果: 共14条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition 期刊论文  OAI收割 rare metals, 2011, 卷号: 30, 期号: 3, 页码: 247-251 作者:   收藏  |  浏览/下载：74/2  |  提交时间：2011/07/05 vanadium dioxide  infrared transition  diffraction effect  dual ion beam sputtering  annealing   Strong room-temperature ferromagnetism in Cu-implanted nonpolar GaN films 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 106, 期号: 11, 页码: art. no. 113921 Sun LL; Yan FW; Zhang HX; Wang JX; Zeng YP; Wang GH; Li JM 收藏  |  浏览/下载：99/0  |  提交时间：2010/04/03 annealing   ZnO thin films on Si(111) grown by pulsed laser deposition from metallic Zn target 期刊论文  OAI收割 applied surface science, 2006, 卷号: 253, 期号: 2, 页码: 841-845 Zhao J (Zhao Jie); Hu LZ (Hu Lizhong); Wang ZY (Wang Zhaoyang); Sun J (Sun Jie); Wang ZJ (Wang Zhijun) 收藏  |  浏览/下载：24/0  |  提交时间：2010/04/11 ZnO  pulsed laser deposition  oxygen pressure  annealing  X-ray diffraction  photoluminescence  ULTRAVIOLET EMISSION  ROOM-TEMPERATURE  ZINC-OXIDE   Photoluminescence from C+ ion-implanted and electrochemical etched Si layers 期刊论文  OAI收割 applied surface science, 2006, 卷号: 252, 期号: 24, 页码: 8424-8427 Shi LW (Shi Liwei); Wang Q (Wang Qiang); Li YG (Li Yuguo); Xue CS (Xue Chengshan); Zhuang HZ (Zhuang Huizhao) 收藏  |  浏览/下载：33/0  |  提交时间：2010/04/11 ion implantation  annealing  chemical etching  photoluminescence  POROUS SILICON  LUMINESCENCE   Electron irradiation-induced defects in InP pre-annealed at high temperature 期刊论文  OAI收割 materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 380-383 Zhao YW (Zhao Y. W.); Dong ZY (Dong Z. Y.); Deng AH (Deng A. H.) 收藏  |  浏览/下载：42/0  |  提交时间：2010/04/11 indium phosphide  defect  irradiation  THERMALLY STIMULATED CURRENT  UNDOPED SEMIINSULATING INP  DEEP-LEVEL DEFECTS  FRENKEL PAIRS  FE  SPECTROSCOPY  PHOSPHIDE  AMBIENT  TRAPS   Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness 期刊论文  OAI收割 journal of crystal growth, 2005, 卷号: 284, 期号: 1-2, 页码: 20-27 作者:  Ye XL;  Xu B 收藏  |  浏览/下载：67/18  |  提交时间：2010/03/17 annealing   Amorphous silicon carbide films prepared by H-2 diluted silane-methane plasma 期刊论文  OAI收割 journal of crystal growth, 2004, 卷号: 264, 期号: 1-3, 页码: 7-12 Hu ZH; Liao XB; Diao HW; Kong GL; Zeng XB; Xu YY 收藏  |  浏览/下载：31/3  |  提交时间：2010/03/09 annealing   Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient 会议论文  OAI收割 iumrs/icem 2002 conference, xian, peoples r china, jun 10-14, 2002 Wang QY; Wang JH; Deng HF; Lin LY 收藏  |  浏览/下载：17/0  |  提交时间：2010/11/15 neutron irradiation  annealing  defects in silicon  SPECTRA   Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers 会议论文  OAI收割 9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001 Zhao YW; Sun NF; Dong HW; Jiao JH; Zhao JQ; Sun TN; Lin LY 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 indium phosphide  semi-insulating  annealing  PICTS  photoluminescence  SEMIINSULATING INP  INDIUM-PHOSPHIDE  FE  PHOTOLUMINESCENCE  TEMPERATURE   Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers 期刊论文  OAI收割 materials science and engineering b-solid state materials for advanced technology, 2002, 卷号: 91, 期号: 0, 页码: 521-524 Zhao YW; Sun NF; Dong HW; Jiao JH; Zhao JQ; Sun TN; Lin LY 收藏  |  浏览/下载：82/19  |  提交时间：2010/08/12 indium phosphide  semi-insulating  annealing  PICTS  photoluminescence  SEMIINSULATING INP  INDIUM-PHOSPHIDE  FE  PHOTOLUMINESCENCE  TEMPERATURE