机构

• 半导体研究所 [24]

采集方式

• OAI收割 [24]

内容类型

• 期刊论文 [18]
• 会议论文 [6]

发表日期

• 2011 [1]
• 2010 [1]
• 2007 [1]
• 2006 [6]
• 2005 [2]
• 2004 [3]
• 更多

学科主题

• 半导体材料 [24]

筛选

浏览/检索结果: 共24条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates 期刊论文  OAI收割 nanoscale research letters, 2011, 卷号: 6, 页码: 463 Li, TF; Chen, YH; Lei, W; Zhou, XL; Luo, S; Hu, YZ; Wang, LJ; Yang, T; Wang, ZG 收藏  |  浏览/下载：18/0  |  提交时间：2012/02/06 RAMAN-SCATTERING  SEMICONDUCTING NANOWIRES  OPTOELECTRONIC DEVICES  PHOSPHIDE NANOWIRES  OPTICAL PHONONS  SILICON  CRYSTALS  SPECTRA   The role of zinc dopant and the temperature effect on the controlled growth of InNnanorods in metal-organic chemical vapor deposition system 期刊论文  OAI收割 crystengcomm, 2010, 卷号: 12, 期号: 11, 页码: 3936-3941 Song HP (Song Huaping); Guo Y (Guo Yan); Yang A (Yang Anli); Wei HY (Wei Hongyuan); Xu XQ (Xu Xiaoqing); Liu JM (Liu Jianming); Yang SY (Yang Shaoyan); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：23/0  |  提交时间：2010/11/14 INDIUM-PHOSPHIDE NANOWIRES   Generation and suppression of deep level defects in InP 期刊论文  OAI收割 acta physica sinica, 2007, 卷号: 56, 期号: 3, 页码: 1476-1479 Zhao YW (Zhao You-Wen); Dong ZY (Dong Zhi-Yuan) 收藏  |  浏览/下载：32/0  |  提交时间：2010/03/29 indium phosphide   Growth of high quality semi-insulating InP single crystal by suppression of compensation defects 会议论文  OAI收割 3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005 Zhao, YW; Dong, ZY; Duan, ML; Sun, WR; Yang, ZX 收藏  |  浏览/下载：202/19  |  提交时间：2010/03/29 indium phosphide   Origin of deep level defect related photoluminescence in annealed InP 期刊论文  OAI收割 journal of applied physics, 2006, 卷号: 100, 期号: 12, 页码: art.no.123519 Zhao, YW (Zhao, Youwen); Dong, ZY (Dong, Zhiyuan); Miao, SS (Miao, Shanshan); Deng, AH (Deng, Aihong); Yang, J (Yang, Jun); Wang, B (Wang, Bo) 收藏  |  浏览/下载：57/0  |  提交时间：2010/03/29 DOPED SEMIINSULATING INP   Recent research results on deep level defects in semi-insulating InP - Application to improve material quality 会议论文  OAI收割 12th international conference on indium phosphide and related materials, princeton, nj, may 07-11, 2006 Zhao, YW (Zhao, Youwen); Dong, ZY (Dong, Zhiyuan); Dong, HW (Dong, Hongwei); Sun, NF (Sun, Niefeng); Sun, TN (Sun, Tongnian) 收藏  |  浏览/下载：61/12  |  提交时间：2010/03/29 STIMULATED CURRENT SPECTROSCOPY  CURRENT TRANSIENT SPECTROSCOPY  FE-DOPED INP  POINT-DEFECTS  COMPENSATION  TEMPERATURE  DONORS  TRAPS   Growth of high quality semi-insulating InP single crystal by suppression of compensation defects 期刊论文  OAI收割 journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 75-77 Zhao YW; Dong ZY; Duan ML; Sun WR; Yang ZX 收藏  |  浏览/下载：37/0  |  提交时间：2010/04/11 indium phosphide  defect  semi-insualting  STIMULATED CURRENT SPECTROSCOPY  CURRENT TRANSIENT SPECTROSCOPY  SEMI-INSULATING INP  DEEP-LEVEL DEFECTS  FE   Electron irradiation-induced defects in InP pre-annealed at high temperature 会议论文  OAI收割 11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005 Zhao, YW (Zhao, Y. W.); Dong, ZY (Dong, Z. Y.); Deng, AH (Deng, A. H.) 收藏  |  浏览/下载：158/28  |  提交时间：2010/03/29 indium phosphide   Electron irradiation-induced defects in InP pre-annealed at high temperature 期刊论文  OAI收割 materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 380-383 Zhao YW (Zhao Y. W.); Dong ZY (Dong Z. Y.); Deng AH (Deng A. H.) 收藏  |  浏览/下载：42/0  |  提交时间：2010/04/11 indium phosphide  defect  irradiation  THERMALLY STIMULATED CURRENT  UNDOPED SEMIINSULATING INP  DEEP-LEVEL DEFECTS  FRENKEL PAIRS  FE  SPECTROSCOPY  PHOSPHIDE  AMBIENT  TRAPS   Raman scattering from GaP nanowires 期刊论文  OAI收割 european physical journal b, 2005, 卷号: 46, 期号: 4, 页码: 507-513 de la Chapelle, ML; Han, HX; Tang, CC 收藏  |  浏览/下载：91/19  |  提交时间：2010/03/17 GALLIUM-PHOSPHIDE NANOWIRES