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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [11]
采集方式
OAI收割 [11]
内容类型
期刊论文 [10]
会议论文 [1]
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2010 [1]
2007 [1]
2005 [1]
2003 [1]
2002 [4]
1995 [1]
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学科主题
半导体物理 [11]
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Quantum Confinement Effects and Electronic Properties of SnO2 Quantum Wires and Dots
期刊论文
OAI收割
journal of physical chemistry c, JOURNAL OF PHYSICAL CHEMISTRY C, 2010, 2010, 卷号: 114, 114, 期号: 11, 页码: 4841-4845, 4841-4845
作者:
Deng HX (Deng Hui-Xiong)
;
Li SS (Li Shu-Shen)
;
Li JB (Li Jingbo)
;
Li, JB, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail Address: jbli@semi.ac.cn
  |  
收藏
  |  
浏览/下载:79/17
  |  
提交时间:2010/04/13
1ST-PRINCIPLES CALCULATIONS
1st-principles Calculations
Molecular-dynamics
Indium-phosphide
Exciton-states
Small Pbse
Nanocrystals
Photoluminescence
Generation
Nanowires
MOLECULAR-DYNAMICS
INDIUM-PHOSPHIDE
EXCITON-STATES
SMALL PBSE
NANOCRYSTALS
PHOTOLUMINESCENCE
GENERATION
NANOWIRES
Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property
期刊论文
OAI收割
acta physica sinica, 2007, 卷号: 56, 期号: 9, 页码: 5536-5541
Zhao, YW (Zhao You-Wen)
;
Miao, SS (Miao Shan-Shan)
;
Dong, ZY (Dong Zhi-Yuan)
;
Lue, XH (Lue Xiao-Hong)
;
Deng, AH (Deng Ai-Hong)
;
Yang, J (Yang Jun)
;
Wang, B (Wang Bo)
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2010/03/29
indium phosphide
Improvement of the electrical property of semi-insulating InP by suppression of compensation defects
会议论文
OAI收割
17th international conference on indium phosphide and related materials, glasgow, scotland, may 08-12, 2005
Zhao, YW
;
Dong, ZY
收藏
  |  
浏览/下载:220/68
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提交时间:2010/03/29
ENCAPSULATED CZOCHRALSKI INP
SEMICONDUCTOR COMPOUND-CRYSTALS
STIMULATED CURRENT SPECTROSCOPY
CURRENT TRANSIENT SPECTROSCOPY
DEEP-LEVEL DEFECTS
ANNEALING AMBIENT
POINT-DEFECTS
FE
PHOSPHIDE
DONORS
Effects of annealing ambient on the formation of compensation defects in InP
期刊论文
OAI收割
journal of applied physics, 2003, 卷号: 93, 期号: 2, 页码: 930-932
Deng AH
;
Mascher P
;
Zhao YW
;
Lin LY
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2010/08/12
UNDOPED SEMIINSULATING INP
LOW FE CONTENT
POSITRON-LIFETIME
PHASE EPITAXY
PRESSURE
VACANCY
INDIUM
ANNIHILATION
PHOSPHIDE
WAFERS
Creation and suppression of point defects through a kick-out substitution process of Fe in InP
期刊论文
OAI收割
applied physics letters, 2002, 卷号: 80, 期号: 16, 页码: 2878-2879
Zhao YW
;
Dong HW
;
Chen YH
;
Zhang YH
;
Jiao JH
;
Zhao JQ
;
Lin LY
;
Fung S
收藏
  |  
浏览/下载:88/2
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提交时间:2010/08/12
SEMIINSULATING INP
ZN DIFFUSION
COMPLEXES
PHOSPHIDE
MECHANISM
CRYSTALS
Positron-annihilation study of compensation defects in InP
期刊论文
OAI收割
journal of applied physics, 2002, 卷号: 91, 期号: 4, 页码: 1998-2001
Shan YY
;
Deng AH
;
Ling CC
;
Fung S
;
Ling CD
;
Zhao YW
;
Sun TN
;
Sun NF
收藏
  |  
浏览/下载:99/9
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提交时间:2010/08/12
UNDOPED SEMIINSULATING INP
INDIUM-PHOSPHIDE
LIFETIME
VACANCY
MECHANISMS
ACCEPTOR
GROWTH
GAAS
Fe-diffusion-induced defects in InP annealed in iron phosphide ambient
期刊论文
OAI收割
japanese journal of applied physics part 1-regular papers short notes & review papers, 2002, 卷号: 41, 期号: 4a, 页码: 1929-1931
Zhao YW
;
Dong HW
;
Jiao JH
;
Zhao JQ
;
Lin LY
收藏
  |  
浏览/下载:96/7
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提交时间:2010/08/12
indium phosphide
annealing
semi-insulating
defect
diffusion
ENCAPSULATED CZOCHRALSKI INP
SEMIINSULATING INP
PHOTO-LUMINESCENCE
INDIUM-PHOSPHIDE
UNDOPED INP
PHOTOLUMINESCENCE
CRYSTALS
PRESSURE
Deep levels in semi-insulating InP obtained by annealing under iron phosphide ambiance
期刊论文
OAI收割
journal of applied physics, 2002, 卷号: 92, 期号: 4, 页码: 1968-1970
Dong HW
;
Zhao YW
;
Zhang YH
;
Jiao JH
;
Zhao JQ
;
Lin LY
收藏
  |  
浏览/下载:63/15
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提交时间:2010/08/12
FE-DOPED INP
SEMIINSULATING INP
UNDOPED INP
SPECTROSCOPY
WAFER
UNIFORMITY
PRESSURE
TRAPS
PHOTOINDUCED CHANGES OF HYDROGEN-BONDING IN SEMIINSULATING IRON-DOPED INDIUM-PHOSPHIDE
期刊论文
OAI收割
solid state communications, 1995, 卷号: 95, 期号: 12, 页码: 851-854
PAJOT B
;
SONG CY
;
DARWICH R
;
GENDRON F
;
EWELS C
收藏
  |  
浏览/下载:18/0
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提交时间:2010/11/17
SEMICONDUCTORS
IMPURITIES
OPTICAL PROPERTIES
LIGHT ABSORPTION
ELECTRON-PARAMAGNETIC-RESONANCE
CRYSTALLINE SILICON
MOLECULAR-HYDROGEN
GALLIUM-ARSENIDE
INP
COMPLEXES
LEVEL
INTERVALLEY GAMMA-CHI DEFORMATION POTENTIALS IN III-V ZINCBLENDE SEMICONDUCTORS BY ABINITIO PSEUDOPOTENTIAL CALCULATIONS
期刊论文
OAI收割
physical review b, 1992, 卷号: 46, 期号: 19, 页码: 12358-12364
WANG JQ
;
GU ZQ
;
LI MF
;
LAI WY
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2010/11/15
LATTICE-DYNAMICAL PROPERTIES
SCATTERING RATES
ZINCBLENDE SEMICONDUCTORS
TEMPERATURE-DEPENDENCE
GALLIUM-PHOSPHIDE
ELECTRON-PHONON
GAAS
SPECTROSCOPY
POINTS
ZONE