机构

• 半导体研究所 [27]

采集方式

• OAI收割 [27]

内容类型

• 期刊论文 [24]
• 会议论文 [3]

发表日期

• 2014 [1]
• 2013 [1]
• 2012 [3]
• 2011 [4]
• 2010 [3]
• 2009 [2]
• 更多

学科主题

• 半导体材料 [27]

筛选

浏览/检索结果: 共27条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文  OAI收割 journal of applied physics, 2014, 卷号: 116, 期号: 4, 页码: 044507 Luan, CB; Lin, ZJ; Lv, YJ; Zhao, JT; Wang, YT; Chen, H; Wang, ZG 收藏  |  浏览/下载：15/0  |  提交时间：2015/03/19 Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells 期刊论文  OAI收割 applied physics letters, 2013, 卷号: 102, 期号: 19, 页码: 192109 - 192109-5 G. Chen, Z. L. Li, X. Q. Wang, C. C. Huang, X. Rong, L. W. Sang, F. J. Xu, N. Tang, Z. X. Qin, M. Sumiya, Y. H. Chen, W. K. Ge, B. Shen 收藏  |  浏览/下载：13/0  |  提交时间：2014/02/12 Polarization Coulomb field scattering in In0.18Al 0.82N/AlN/GaN heterostructure field-effect transistors 期刊论文  OAI收割 journal of applied physics, 2012, 卷号: 112, 期号: 5, 页码: 00218979 Luan, Chongbiao; Lin, Zhaojun; Feng, Zhihong; Meng, Lingguo; Lv, Yuanjie; Cao, Zhifang; Yu, Yingxia; Wang, Zhanguo 收藏  |  浏览/下载：12/0  |  提交时间：2013/05/07 Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文  OAI收割 applied physics letters, 2012, 卷号: 101, 期号: 11, 页码: 113501 Luan CB (Luan, Chongbiao); Lin ZJ (Lin, Zhaojun); Lv YJ (Lv, Yuanjie); Meng LG (Meng, Lingguo); Yu YX (Yu, Yingxia); Cao ZF (Cao, Zhifang); Chen H (Chen, Hong); Wang ZG (Wang, Zhanguo) 收藏  |  浏览/下载：8/0  |  提交时间：2013/03/27 Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors 期刊论文  OAI收割 journal of applied physics, 2012, 卷号: 112, 期号: 5, 页码: 054513 Luan CB (Luan, Chongbiao); Lin ZJ (Lin, Zhaojun); Feng ZH (Feng, Zhihong); Meng LG (Meng, Lingguo); Lv YJ (Lv, Yuanjie); Cao ZF (Cao, Zhifang); Yu YX (Yu, Yingxia); Wang ZG (Wang, Zhanguo) 收藏  |  浏览/下载：14/0  |  提交时间：2013/04/02 Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots 期刊论文  OAI收割 physical review b, 2011, 卷号: 83, 期号: 12, 页码: article no.121302 Plumhof JD; Krapek V; Ding F; Jons KD; Hafenbrak R; Klenovsky P; Herklotz A; Dorr K; Michler P; Rastelli A; Schmidt OG 收藏  |  浏览/下载：64/2  |  提交时间：2011/07/05 ENTANGLED PHOTON PAIRS  SEMICONDUCTOR  SPIN   Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts 期刊论文  OAI收割 chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105 Lu YJ; Lin ZJ; Zhang Y; Meng LG; Cao ZF; Luan CB; Chen H; Wang ZG 收藏  |  浏览/下载：56/2  |  提交时间：2011/07/05 AlGaN/GaN heterostructures  thermal stressing  polarization  self-consistently solving Schrodinger's and Poisson's equations  FIELD-EFFECT TRANSISTORS  POLARIZATION  STABILITY  CHARGE  GAN   Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文  OAI收割 applied physics letters, 2011, 卷号: 98, 期号: 12, 页码: article no.123512 Lv YJ; Lin ZJ; Zhang Y; Meng LG; Luan CB; Cao ZF; Chen H; Wang ZG 收藏  |  浏览/下载：67/9  |  提交时间：2011/07/05 2-DIMENSIONAL ELECTRON-GAS  INTERFACIAL LAYER  MOBILITY   The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure 期刊论文  OAI收割 european physical journal-applied physics, 2011, 卷号: 55, 期号: 1, 页码: 10102 Bi Y; Wang XL; Xiao HL; Wang CM; Peng EC; Lin DF; Feng C; Jiang LJ 收藏  |  浏览/下载：35/0  |  提交时间：2012/01/06 ALGAN/GAN/INGAN/GAN DH-HEMTS  FIELD-EFFECT TRANSISTORS  ALGAN/GAN  POLARIZATION  PASSIVATION  HFETS  GHZ   In-plane stray field induced spin-filtering in a two-dimensional electron gas under the modulation of surface ferromagnetic dual-gate 期刊论文  OAI收割 journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073703 Wang Y (Wang Y.); Jiang Y (Jiang Y.); Zhang XW (Zhang X. W.); Yin ZG (Yin Z. G.) 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/14 BARRIER STRUCTURE  MAGNETIC-FIELD  POLARIZATION  CONDUCTANCE  DEVICE