机构

• 半导体研究所 [18]

采集方式

• OAI收割 [18]

内容类型

• 期刊论文 [16]
• 会议论文 [2]

发表日期

• 2011 [2]
• 2009 [2]
• 2006 [2]
• 2003 [2]
• 2002 [1]
• 2000 [1]
• 更多

学科主题

• 半导体物理 [18]

筛选

浏览/检索结果: 共18条，第1-10条 帮助 限定条件 学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Fabrication of ferromagnetic GaMnSb by thermal diffusion of evaporated Mn 期刊论文  OAI收割 journal of crystal growth, JOURNAL OF CRYSTAL GROWTH, 2011, 2011, 卷号: 316, 316, 期号: 1, 页码: 145-148, 145-148 作者:  Yang GD;  Zhu F;  Dong S;  Yang, GD, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. guandongyang@gmail.com   |  收藏  |  浏览/下载：64/2  |  提交时间：2011/07/05 Diffusion  Physical vapor deposition processes  Magnetic materials  Semiconducting III-V materials  GASB/MN DIGITAL ALLOYS  ROOM-TEMPERATURE FERROMAGNETISM  RAMAN-SCATTERING  MAGNETOTRANSPORT PROPERTIES  EPITAXIAL LAYERS  THIN-FILMS  SEMICONDUCTORS  STRAIN  MAGNETOELECTRONICS  SPINTRONICS  Diffusion  Physical Vapor Deposition Processes  Magnetic Materials  Semiconducting Iii-v Materials  Gasb/mn Digital Alloys  Room-temperature Ferromagnetism  Raman-scattering  Magnetotransport Properties  Epitaxial Layers  Thin-films  Semiconductors  Strain  Magnetoelectronics  Spintronics   First principles study of the electronic properties of twinned SiC nanowires 期刊论文  OAI收割 journal of nanoparticle research, JOURNAL OF NANOPARTICLE RESEARCH, 2011, 2011, 卷号: 13, 13, 期号: 1, 页码: 185-191, 185-191 作者:  Wang ZG;  Wang SJ;  Zhang CL;  Li JB;  Wang, ZG, Univ Elect Sci & Technol China. , Dept Appl Phys, Chengdu 610054, Peoples R China. zgwang@uestc.edu.cn   |  收藏  |  浏览/下载：100/6  |  提交时间：2011/07/05 Twinned SiC nanowires  Electronic properties  Ab initio  Modeling and simulation  SILICON-CARBIDE NANOWIRES  FIELD-EMISSION PROPERTIES  MOLECULAR-BEAM EPITAXY  INAS NANOWIRES  GROWTH  NANOTUBES  NITRIDE  DIFFUSION  NANORODS  ENERGY  Twinned Sic Nanowires  Electronic Properties  Ab Initio  Modeling And Simulation  Silicon-carbide Nanowires  Field-emission Properties  Molecular-beam Epitaxy  Inas Nanowires  Growth  Nanotubes  Nitride  Diffusion  Nanorods  Energy   Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713 作者:  Zhang XW;  You JB;  Yin ZG 收藏  |  浏览/下载：70/1  |  提交时间：2010/03/08 annealing  carrier density  carrier mobility  diffusion  electrical conductivity  electrical resistivity  hydrogen  II-VI semiconductors  impurity states  interstitials  light transmission  plasma materials processing  semiconductor thin films  sputter deposition  vacancies (crystal)  visible spectra  wide band gap semiconductors  zinc compounds   Measuring spin diffusion of electrons in bulk n-GaAs using circularly dichromatic absorption difference spectroscopy of spin gratings 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 94, 期号: 20, 页码: art. no. 202109 Yu HL; Zhang XM; Wang PF; Ni HQ; Niu ZC; Lai TS 收藏  |  浏览/下载：53/4  |  提交时间：2010/03/08 circular dichroism  diffraction gratings  diffusion  gallium arsenide  homodyne detection  III-V semiconductors  spin dynamics  spin polarised transport   Quantum measurement of an electron in a disordered potential: Delocalization versus measurement voltages 期刊论文  OAI收割 physical review b, 2006, 卷号: 73, 期号: 3, 页码: art.no.035320 Hu XN; Li XQ 收藏  |  浏览/下载：75/0  |  提交时间：2010/04/11 DOT  DIFFUSION  DETECTOR   Quantum measurement of single electron state by a quantum point contact 期刊论文  OAI收割 acta physica sinica, 2006, 卷号: 55, 期号: 7, 页码: 3259-3264 Hu XN (Hu Xue-Ning); Li XQ (Li Xin-Qi) 收藏  |  浏览/下载：18/0  |  提交时间：2010/04/11 quantum measurement  qubit  detailed balance  delocalization  DOT  DIFFUSION  DETECTOR   Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient 期刊论文  OAI收割 microelectronic engineering, 2003, 卷号: 66, 期号: 1-4, 页码: 333-339 Wang QY; Wang JH; Deng HF; Lin LY 收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12 neutron irradiation  annealing  defects in silicon  SPECTRA   Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on GaAs (311)A substrate by molecular beam epitaxy 期刊论文  OAI收割 chinese physics, 2003, 卷号: 12, 期号: 2, 页码: 218-221 Zhou DY; Lan Q; Kong YC; Miao ZH; Feng SL; Niu ZC 收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12 molecular beam epitaxy (MBE) step bunching  InGaAs  quantum wire  SURFACE-DIFFUSION  GROWTH  DOTS   Fe-diffusion-induced defects in InP annealed in iron phosphide ambient 期刊论文  OAI收割 japanese journal of applied physics part 1-regular papers short notes & review papers, 2002, 卷号: 41, 期号: 4a, 页码: 1929-1931 Zhao YW; Dong HW; Jiao JH; Zhao JQ; Lin LY 收藏  |  浏览/下载：96/7  |  提交时间：2010/08/12 indium phosphide  annealing  semi-insulating  defect  diffusion  ENCAPSULATED CZOCHRALSKI INP  SEMIINSULATING INP  PHOTO-LUMINESCENCE  INDIUM-PHOSPHIDE  UNDOPED INP  PHOTOLUMINESCENCE  CRYSTALS  PRESSURE   Carrier transport properties of the (n)nc-Si : H/(p)c-Si heterojunction 期刊论文  OAI收割 acta physica sinica, 2000, 卷号: 49, 期号: 12, 页码: 2466-2471 Peng YC; Xu GY; He YL; Liu M; Li YX 收藏  |  浏览/下载：39/0  |  提交时间：2010/08/12 (n)nc-Si : H/(p)c-Si heterojunction  band model  carrier transport mechanisms  temperature properties  CRYSTALLINE