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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [31]
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OAI收割 [31]
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期刊论文 [26]
会议论文 [5]
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2011 [1]
2010 [2]
2006 [3]
2003 [3]
2002 [2]
2001 [5]
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学科主题
半导体材料 [31]
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Growth Simulations of Self-Assembled Nanowires on Stepped Substrates
期刊论文
OAI收割
ieee journal of selected topics in quantum electronics, 2011, 卷号: 17, 期号: 4, 页码: 960-965
Liang S
;
Kong DH
;
Zhu HL
;
Wang W
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2012/02/06
CHEMICAL-VAPOR-DEPOSITION
MOLECULAR-BEAM EPITAXY
QUANTUM DOTS
SURFACE MIGRATION
FABRICATION
GAAS(100)
ISLANDS
WIRES
Formation trends of ordered self-assembled nanoislands on stepped substrates
期刊论文
OAI收割
journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073512
Liang S (Liang S.)
;
Zhu HL (Zhu H. L.)
;
Kong DH (Kong D. H.)
;
Wang W (Wang W.)
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/11/14
CHEMICAL-VAPOR-DEPOSITION
INAS QUANTUM DOTS
MOLECULAR-BEAM EPITAXY
GAAS
SURFACES
ISLANDS
GROWTH
FABRICATION
MIGRATION
ARRAYS
Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density
期刊论文
OAI收割
journal of physics d-applied physics, 2010, 卷号: 43, 期号: 48, 页码: art. no. 485102
Zhou XL (Zhou X. L.)
;
Chen YH (Chen Y. H.)
;
Jia CH (Jia C. H.)
;
Ye XL (Ye X. L.)
;
Xu B (Xu Bo)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2010/12/12
DEPENDENCE
SPECTRA
Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD
期刊论文
OAI收割
microelectronics journal, 2006, 卷号: 37, 期号: 7, 页码: 583-585
Ran JX
;
Wang XL
;
Hu GX
;
Wang JX
;
Li JP
;
Wang CM
;
Zeng YP
;
Li JM
收藏
  |  
浏览/下载:53/0
  |  
提交时间:2010/04/11
GaN
Mg memory effect
redistribution
AlGaN/GaN HBTs
MOCVD
CHEMICAL-VAPOR-DEPOSITION
HETEROJUNCTION BIPOLAR-TRANSISTORS
FABRICATION
Selective growth of InAs islands on patterned GaAs (100) substrate
期刊论文
OAI收割
superlattices and microstructures, 2006, 卷号: 39, 期号: 5, 页码: 446-453
作者:
Xu B
;
Jin P
收藏
  |  
浏览/下载:92/0
  |  
提交时间:2010/04/11
patterned substrate
molecular beam epitaxy
quantum dots
InAs
GaAs
InGaAs
ASSEMBLED QUANTUM DOTS
MOLECULAR-BEAM EPITAXY
FABRICATION
Electron irradiation-induced defects in InP pre-annealed at high temperature
期刊论文
OAI收割
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 380-383
Zhao YW (Zhao Y. W.)
;
Dong ZY (Dong Z. Y.)
;
Deng AH (Deng A. H.)
收藏
  |  
浏览/下载:42/0
  |  
提交时间:2010/04/11
indium phosphide
defect
irradiation
THERMALLY STIMULATED CURRENT
UNDOPED SEMIINSULATING INP
DEEP-LEVEL DEFECTS
FRENKEL PAIRS
FE
SPECTROSCOPY
PHOSPHIDE
AMBIENT
TRAPS
Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances
期刊论文
OAI收割
journal of crystal growth, 2003, 卷号: 259, 期号: 1-2, 页码: 1-7
Dong ZY
;
Zhao YW
;
Zeng YP
;
Duan ML
;
Sun WR
;
Jiao JH
;
Lin LY
收藏
  |  
浏览/下载:351/16
  |  
提交时间:2010/08/12
annealing
defects
etching
semiconducting indium phosphide
FE-DOPED INP
SEMIINSULATING INP
INDIUM-PHOSPHIDE
DEFECTS
DIFFUSION
CRYSTALS
WAFERS
Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient
会议论文
OAI收割
iumrs/icem 2002 conference, xian, peoples r china, jun 10-14, 2002
Wang QY
;
Wang JH
;
Deng HF
;
Lin LY
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2010/11/15
neutron irradiation
annealing
defects in silicon
SPECTRA
Silicon nanowires grown on a pre-annealed Si substrate
期刊论文
OAI收割
journal of crystal growth, 2003, 卷号: 247, 期号: 1-2, 页码: 13-16
Zeng XB
;
Xu YY
;
Zhang SB
;
Hu ZH
;
Diao HW
;
Wang YQ
;
Kong GL
;
Liao XB
收藏
  |  
浏览/下载:50/0
  |  
提交时间:2010/08/12
chemical vapor deposition processes
nanomaterials
semiconducting silicon
LASER-ABLATION
SEMICONDUCTOR NANOWIRES
MECHANISM
EVAPORATION
DIAMETER
WIRES
Progress of Si-based nanocrystalline luminescent materials
期刊论文
OAI收割
chinese science bulletin, 2002, 卷号: 47, 期号: 15, 页码: 1233-1242
Peng YC
;
Zhao XW
;
Fu GS
收藏
  |  
浏览/下载:84/0
  |  
提交时间:2010/08/12
Si-based nanomaterials
fabricated method
structural characterization
light emitting mechanism
Si-based photoelectronic devices
CHEMICAL-VAPOR-DEPOSITION
SELF-ASSEMBLING FORMATION
SILICON QUANTUM DOTS
LASER-ABLATION
OPTICAL-ABSORPTION
POROUS SILICON
LIGHT-EMISSION
PHOTOLUMINESCENCE
FABRICATION
OXYGEN