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Effect of nitrogen gas flow and growth temperature on extension of GaN layer on Si* 期刊论文  OAI收割
CHINESE PHYSICS B, 2021, 卷号: 30, 期号: 11, 页码: 118101
作者:  Xu, Jian-Kai;   Jiang, Li-Juan;   Wang, Qian;   Wang, Quan;   Xiao, Hong-Ling;   Feng, Chun;   Li, Wei;   Wang, Xiao-Liang
  |  收藏  |  浏览/下载：5/0  |  提交时间：2022/03/23
Simulation of a Parallel Dual-Metal-Gate Structure for AlGaN/GaN High-Electron-Mobility Transistor High-Linearity Applications 期刊论文  OAI收割
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2021, 卷号: 218, 期号: 18, 页码: 2100151
作者:  Jia, Yeting;   Wang, Quan;   Chen, Changxi;   Feng, Chun;   Li, Wei;   Jiang, Lijuan;   Xiao, Hongling;   Wang, Qian;   Xu, Xiangang;   Wang, Xiaoliang
  |  收藏  |  浏览/下载：62/0  |  提交时间：2022/05/19
MBE growth of mid-wavelength infrared photodetectors based on high quality InAs/AlAs/InAsSb superlattice 期刊论文  OAI收割
JOURNAL OF CRYSTAL GROWTH, 2021, 卷号: 564, 页码: 126109
作者:  Jiang, Jun-Kai;   Li, Yong;   Chang, Fa-Ran;   Cui, Su-Ning;   Chen, Wei-Qiang;   Jiang, Dong-Wei;   Wang, Guo-Wei;   Xu, Ying-Qiang;   Niu, Zhi-Chuan;   Che, Ren-chao;   Zhang, Chuan-jie;   Huang, Li
  |  收藏  |  浏览/下载：23/0  |  提交时间：2022/05/19
High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped beta-Ga2O3 thin film* 期刊论文  OAI收割
CHINESE PHYSICS B, 2021, 卷号: 30, 期号: 5, 页码: 57301
作者:  Zhi, Yu-Song;   Jiang, Wei-Yu;   Liu, Zeng;   Liu, Yuan-Yuan;   Chu, Xu-Long;   Liu, Jia-Hang;   Li, Shan;   Yan, Zu-Yong;   Wang, Yue-Hui;   Li, Pei-Gang;   Wu, Zhen-Ping;   Tang, Wei-Hua
  |  收藏  |  浏览/下载：9/0  |  提交时间：2022/07/25
The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT 期刊论文  OAI收割
MICROMACHINES, 2021, 卷号: 12, 期号: 2, 页码: 131
作者:  Niu, Di;   Wang, Quan;   Li, Wei;   Chen, Changxi;   Xu, Jiankai;   Jiang, Lijuan;   Feng, Chun;   Xiao, Hongling;   Wang, Qian;   Xu, Xiangang;   Wang, Xiaoliang
  |  收藏  |  浏览/下载：11/0  |  提交时间：2022/11/03
Growth and photo-electronic characteristics of short/mid wave dual-band infrared detectors based on GaSb bulk and InAs/GaSb superlattices 期刊论文  OAI收割
OPTICAL MATERIALS EXPRESS, 2021, 卷号: 11, 期号: 2, 页码: 585-591
作者:  Ma, Xiaole;   Guo, Jie;   Hao, Ruiting;   Wei, Guoshuai;   Chang, Faran;   Li, Yong;   Li, Xiaoming;   Jiang, Dongwei;   Wang, Guowei;   Xu, Yingqiang;   Niu, Zhichuan
  |  收藏  |  浏览/下载：21/0  |  提交时间：2022/11/03
Hybrid-gate structure designed for high-performance normally-off p-GaN high-electron-mobility transistor 期刊论文  OAI收割
Japanese Journal of Applied Physics, 2020, 卷号: 59, 期号: 11, 页码: 111001
作者:  Di Niu;   Quan Wang;   Wei Li;   Changxi Chen;   Jiankai Xu;   Lijuan Jiang;   Chun Feng;   Hongling Xiao;   Qian Wang;   Xiangang Xu;   Xiaoliang Wang
  |  收藏  |  浏览/下载：33/0  |  提交时间：2021/05/24
Comparative Study of SiC Planar MOSFETs With Different p-Body Designs 期刊论文  OAI收割
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 卷号: 67, 期号: 3, 页码: 1071-1076
作者:  Weijiang Ni ;   Xiaoliang Wang ;   Miaoling Xu ;   Mingshan Li;   Chun Feng;   Hongling Xiao;   Lijuan Jiang;   Wei Li;   Quan Wang
  |  收藏  |  浏览/下载：22/0  |  提交时间：2021/11/05
Single-Photon Emission from Point Defects in Aluminum Nitride Films 期刊论文  OAI收割
JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2020, 卷号: 11, 期号: 7, 页码: 2689-2694
作者:  Yongzhou Xue;   Hui Wang;   Nan Xie;   Qian Yang;   Fujun Xu;   Bo Shen;   Jun-jie Shi;   Desheng Jiang;   Xiuming Dou;   Tongjun Yu;   Bao-quan Sun
  |  收藏  |  浏览/下载：16/0  |  提交时间：2021/06/28
Piezoelectric Tunnel FET With a Steep Slope 期刊论文  OAI收割
IEEE ELECTRON DEVICE LETTERS, 2020, 卷号: 41, 期号: 6, 页码: 948-951
作者:  Yuxiong Long , Student Member,IEEE;   Jun Z. Huang;   Qianqian Huang,Member, IEEE;   Nuo Xu, Member, IEEE;   Xiangwei Jiang ,Member,IEEE;   Zhi-Chuan Niu ;   Ru Huang, Fellow, IEEE;   Shu-Shen Li
  |  收藏  |  浏览/下载：12/0  |  提交时间：2021/06/17