机构

• 半导体研究所 [9]

采集方式

• OAI收割 [9]

内容类型

• 期刊论文 [5]
• 会议论文 [4]

发表日期

• 2013 [2]
• 2010 [2]
• 2007 [3]
• 2006 [2]

学科主题

• 半导体材料 [9]

筛选

浏览/检索结果: 共9条，第1-9条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells 期刊论文  OAI收割 applied physics letters, 2013, 卷号: 102, 期号: 19, 页码: 192109 - 192109-5 G. Chen, Z. L. Li, X. Q. Wang, C. C. Huang, X. Rong, L. W. Sang, F. J. Xu, N. Tang, Z. X. Qin, M. Sumiya, Y. H. Chen, W. K. Ge, B. Shen 收藏  |  浏览/下载：13/0  |  提交时间：2014/02/12 Effect of the thickness of Bi2Se3 sheets on the morphologies of Bi2Se3–ZnS nanocomposites and improved photoresponsive characteristic 期刊论文  OAI收割 J Mater Sci: Mater Electron, J Mater Sci: Mater Electron, 2013, 2013, 卷号: 24, 24, 页码: 4197–4203, 4197–4203 作者:  R. X. Li;  M. L. Wang;  X. Q. Meng;  Z. M. Wei   |  收藏  |  浏览/下载：13/0  |  提交时间：2015/05/11 The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy 期刊论文  OAI收割 solid state communications, 2010, 卷号: 150, 期号: 41-42, 页码: 1991-1994 Song HP (Song H. P.); Zheng GL (Zheng G. L.); Yang AL (Yang A. L.); Guo Y (Guo Y.); Wei HY (Wei H. Y.); Li CM (Li C. M.); Yang SY (Yang S. Y.); Liu XL (Liu X. L.); Zhu QS (Zhu Q. S.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：16/0  |  提交时间：2010/11/27 ZnO  In2O3  MOCVD  Photoelectron spectroscopies  IN2O3-ZNO FILMS  TRANSPARENT  OXIDE  SEMICONDUCTORS  INN   Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy 期刊论文  OAI收割 nanoscale research letters, 2010, 卷号: 5, 期号: 8, 页码: 1340-1343 Liu JM (Liu J. M.); Liu XL (Liu X. L.); Xu XQ (Xu X. Q.); Wang J (Wang J.); Li CM (Li C. M.); Wei HY (Wei H. Y.); Yang SY (Yang S. Y.); Zhu QS (Zhu Q. S.); Fan YM (Fan Y. M.); Zhang XW (Zhang X. W.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：144/21  |  提交时间：2010/08/17 Valence band offset  w-InN/h-BN heterojunction  X-ray photoelectron spectroscopy  Conduction band offset  Valence band offset  NEGATIVE ELECTRON-AFFINITY  INDIUM NITRIDE  WURTZITE GAN  SURFACE  FILM  ALN  TRANSPORT  EMISSION  NAXWO3  GROWTH   Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers 会议论文  OAI收割 33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006 Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Li, JM (Li, J. M.); Ning, J (Ning, J.); Zhao, YM (Zhao, Y. M.); Luo, MC (Luo, M. C.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Zeng, YP (Zeng, Y. P.) 收藏  |  浏览/下载：88/9  |  提交时间：2010/03/29 AVALANCHE PHOTODIODES  AREA   Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection 会议论文  OAI收割 6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006 Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Zhao, YM (Zhao, Y. M.); Ning, J (Ning, J.); Li, JY (Li, J. Y.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Luo, MC (Luo, M. C.); Li, JM (Li, J. M.) 收藏  |  浏览/下载：102/26  |  提交时间：2010/03/29 homoepitaxy  4H-SiC  multi-epilayer  UV detection  p(+)-pi-n(-)  ULTRAVIOLET PHOTODETECTOR  EPITAXIAL-GROWTH   Micro-raman investigation of defects in a 4H-SiC homoepilayer 会议论文  OAI收割 6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006 Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Li, JM (Li, J. M.); Zhao, YM (Zhao, Y. M.); Li, JY (Li, J. Y.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Luo, MC (Luo, M. C.); Zeng, YP (Zeng, Y. P.) 收藏  |  浏览/下载：161/28  |  提交时间：2010/03/29 micro-raman  4H-SiC  defects  3C-inclusions  triangle-shaped inclusion  EPITAXIAL LAYERS  SILICON-CARBIDE   Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 期刊论文  OAI收割 materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 275-278 Sun GS (Sun G. S.); Liu XF (Liu X. F.); Gong QC (Gong Q. C.); Wang L (Wang L.); Zhao WS (Zhao W. S.); Li JY (Li J. Y.); Zeng YP (Zeng Y. P.); Li JM (Li J. M.) 收藏  |  浏览/下载：43/0  |  提交时间：2010/04/11 4H-SiC  homoepitaxial layers  surface morphological defect  optical microscopy  SILICON-CARBIDE  DISLOCATIONS  FILMS   Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 会议论文  OAI收割 11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005 Sun, GS (Sun, G. S.); Liu, XF (Liu, X. F.); Gong, QC (Gong, Q. C.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Li, JY (Li, J. Y.); Zeng, YP (Zeng, Y. P.); Li, JM (Li, J. M.) 收藏  |  浏览/下载：166/18  |  提交时间：2010/03/29 4H-SiC