中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [13]
采集方式
OAI收割 [13]
内容类型
期刊论文 [13]
发表日期
2015 [1]
2013 [1]
2010 [5]
2006 [6]
学科主题
半导体材料 [13]
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Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells
期刊论文
OAI收割
scientific reports, 2015, 卷号: 5, 页码: 14386
X. Rong
;
X. Q. Wang
;
G. Chen
;
X. T. Zheng
;
P. Wang
;
F. J. Xu
;
Z. X. Qin
;
N. Tang
;
Y. H. Chen
;
L. W. Sang
;
M. Sumiya
;
W. K. Ge
;
B. Shen
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2016/03/18
Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells
期刊论文
OAI收割
applied physics letters, 2013, 卷号: 102, 期号: 19, 页码: 192109 - 192109-5
G. Chen, Z. L. Li, X. Q. Wang, C. C. Huang, X. Rong, L. W. Sang, F. J. Xu, N. Tang, Z. X. Qin, M. Sumiya, Y. H. Chen, W. K. Ge, B. Shen
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2014/02/12
Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density
期刊论文
OAI收割
journal of physics d-applied physics, 2010, 卷号: 43, 期号: 48, 页码: art. no. 485102
Zhou XL (Zhou X. L.)
;
Chen YH (Chen Y. H.)
;
Jia CH (Jia C. H.)
;
Ye XL (Ye X. L.)
;
Xu B (Xu Bo)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2010/12/12
DEPENDENCE
SPECTRA
Characterization and analysis of two-dimensional GaAs-based photonic crystal nanocavities at room temperature
期刊论文
OAI收割
microelectronic engineering, 2010, 卷号: 87, 期号: 10, 页码: 1834-1837
Peng YS (Peng Y. S.)
;
Xu B (Xu B.)
;
Ye XL (Ye X. L.)
;
Niu JB (Niu J. B.)
;
Jia R (Jia R.)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:106/27
  |  
提交时间:2010/08/17
Photonic crystal nanocavities
Quantum dots
Cavity resonant mode
Room temperature
Abnormal temperature dependent photoluminescence of self-assembled InAs/GaAs surface quantum dots with high areal density
期刊论文
OAI收割
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 42, 期号: 9, 页码: 2455-2459
Zhou XL (Zhou X. L.)
;
Chen YH (Chen Y. H.)
;
Liu JQ (Liu J. Q.)
;
Xu B (Xu B.)
;
Ye XL (Ye X. L.)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:264/60
  |  
提交时间:2010/09/07
Quantum dots
Temperature dependent
Photoluminescence
Surface localized centers
Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy
期刊论文
OAI收割
nanoscale research letters, 2010, 卷号: 5, 期号: 8, 页码: 1340-1343
Liu JM (Liu J. M.)
;
Liu XL (Liu X. L.)
;
Xu XQ (Xu X. Q.)
;
Wang J (Wang J.)
;
Li CM (Li C. M.)
;
Wei HY (Wei H. Y.)
;
Yang SY (Yang S. Y.)
;
Zhu QS (Zhu Q. S.)
;
Fan YM (Fan Y. M.)
;
Zhang XW (Zhang X. W.)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:145/21
  |  
提交时间:2010/08/17
Valence band offset
w-InN/h-BN heterojunction
X-ray photoelectron spectroscopy
Conduction band offset
Valence band offset
NEGATIVE ELECTRON-AFFINITY
INDIUM NITRIDE
WURTZITE GAN
SURFACE
FILM
ALN
TRANSPORT
EMISSION
NAXWO3
GROWTH
Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density
期刊论文
OAI收割
journal of physics d-applied physics, 2010, 卷号: 43, 期号: 29, 页码: art. no. 295401
Zhou XL (Zhou X. L.)
;
Chen YH (Chen Y. H.)
;
Liu JQ (Liu J. Q.)
;
Jia CH (Jia C. H.)
;
Zhou GY (Zhou G. Y.)
;
Ye XL (Ye X. L.)
;
Xu B (Xu Bo)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:336/26
  |  
提交时间:2010/08/17
CARRIER RELAXATION
STATES
SUPERLATTICES
CONFINEMENT
LASER
Large g factors of higher-lying excitons detected with reflectance difference spectroscopy in GaAs-based quantum wells
期刊论文
OAI收割
applied physics letters, 2006, 卷号: 89, 期号: 5, 页码: art.no.051903
Chen YH (Chen Y. H.)
;
Ye XL (Ye X. L.)
;
Xu B (Xu B.)
;
Wang ZG (Wang Z. G.)
;
Yang Z (Yang Z.)
收藏
  |  
浏览/下载:63/0
  |  
提交时间:2010/04/11
EXCHANGE INTERACTION
HEAVY-HOLE
ELECTRON
SUPERLATTICES
MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting
期刊论文
OAI收割
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 35, 期号: 1, 页码: 194-198
Jiao YH (Jiao Y. H.)
;
Wu J (Wu J.)
;
Xu B (Xu B.)
;
Jin P (Jin P.)
;
Hu LJ (Hu L. J.)
;
Liang LY (Liang L. Y.)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/04/11
metamorphic
long wavelength
quantum dots
molecular beam epitaxy
MOLECULAR-BEAM EPITAXY
CHEMICAL-VAPOR-DEPOSITION
1.3 MU-M
GAAS
EMISSION
RANGE
ISLANDS
ARRAYS
LASERS
Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth
期刊论文
OAI收割
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 31-35
Zhao C (Zhao C.)
;
Chen YH (Chen Y. H.)
;
Zhao M (Zhao Man)
;
Zhang CL (Zhang C. L.)
;
Xu B (Xu B.)
;
Yu LK (Yu L. K.)
;
Sun J (Sun J.)
;
Lei W (Lei W.)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2010/04/11
Monte Carlo simulation
molecular beam epitaxy
kinetic effects
quantum dot
LAYER