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Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文  OAI收割
Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466
作者:  X. LI;  Z. S. LIU;  D. G. ZHAO;  D. S. JIANG;  P. CHEN
收藏  |  浏览/下载：20/0  |  提交时间：2018/07/11
XPS study of impurities in Si-doped AlN film 期刊论文  OAI收割
surface and interface analysis, 2016, 卷号: 48, 期号: 12, 页码: 1305–1309
F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; L. C. Le; W. Liu; X.G. He; X. J. Li; X Li; S. T Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du
收藏  |  浏览/下载：28/0  |  提交时间：2017/03/10
The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文  OAI收割
aip advances, 2016, 卷号: 6, 页码: 035124
P. Chen; D. G. Zhao; D. S. Jiang; J. J. Zhu; Z. S. Liu; J. Yang; X. Li; L. C. Le; X. G. He; W. Liu; X. J. Li; F. Liang; B. S. Zhang; H. Yang; Y. T. Zhang; G. T. Du
收藏  |  浏览/下载：24/0  |  提交时间：2017/03/10
Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文  OAI收割
applied physics a, 2016, 卷号: 122, 期号: 9
F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. G. He; X. J. Li; X. Li; S. T. Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du
收藏  |  浏览/下载：13/0  |  提交时间：2017/03/10
Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文  OAI收割
materials technology, 2016
F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. Li; S. T. Liu; H. Yang; L. Q. Zhang; J. P. Liu; Y. T. Zhang; G. T. Du
收藏  |  浏览/下载：22/0  |  提交时间：2017/03/10
Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes 期刊论文  OAI收割
optics express, 2016, 卷号: 24, 期号: 13, 页码: 13824-13831
J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; Z. S. Liu; J. J. Zhu; X. J. Li; X. G. He; J. P. Liu; L. Q. Zhang; H. Yang; Y. T. Zhang; G. T. Du
收藏  |  浏览/下载：15/0  |  提交时间：2017/03/10
Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness 期刊论文  OAI收割
journal of applied physics, 2015, 卷号: 117, 页码: 055709
J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; L. C. Le; X. J. Li; X. G. He; J. P. Liu; H. Yang; Y. T. Zhang; G. T. Du
收藏  |  浏览/下载：14/0  |  提交时间：2016/03/23
Temperature dependence of photoluminescence spectra for green ligh emission from InGaN/GaN multiple wells 期刊论文  OAI收割
optics express, 2015, 卷号: 23, 期号: 12, 页码: 15935
W. Liu; D. G. Zhao; D. S. Jiang; P. Chen; Z. S. Liu; J. J. Zhu; M. Shi; D. M.Zhao; X. Li; J. P. Liu; S. M. Zhang; H. Wang; H. Yang; Y. T. Zhang; G. T.Du
收藏  |  浏览/下载：19/0  |  提交时间：2016/03/23
Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes 期刊论文  OAI收割
applied physics letters, APPLIED PHYSICS LETTERS, 2012, 2012, 卷号: 101, 101, 期号: 25, 页码: 252110, 252110
作者:  Le LC (Le, L. C.);  Zhao DG (Zhao, D. G.);  Jiang DS (Jiang, D. S.);  Zhang SM (Zhang, S. M.);  Yang H (Yang, H.)
  |  收藏  |  浏览/下载：17/0  |  提交时间：2013/03/20
Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties 期刊论文  OAI收割
physica b-condensed matter, 2010, 卷号: 405, 期号: 22, 页码: 4668-4672
Wang H (Wang H.); Jiang DS (Jiang D. S.); Jahn U (Jahn U.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Qiu YX (Qiu Y. X.); Yang H (Yang H.)
收藏  |  浏览/下载：35/0  |  提交时间：2010/12/12