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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [17]
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OAI收割 [17]
内容类型
期刊论文 [17]
发表日期
2012 [1]
2011 [10]
2010 [2]
2008 [2]
2007 [1]
2000 [1]
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学科主题
半导体材料 [17]
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学科主题:半导体材料
内容类型:期刊论文
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A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures
期刊论文
OAI收割
applied physics letters, 2012, 卷号: 101, 期号: 18, 页码: 182102
Ding JQ (Ding, Jieqin)
;
Wang XL (Wang, Xiaoliang)
;
Xiao HL (Xiao, Hongling)
;
Wang CM (Wang, Cuimei)
;
Chen H (Chen, Hong)
;
Bi Y (Bi, Yang)
;
Deng QW (Deng, Qinwen)
;
Zhang JW (Zhang, Jingwen)
;
Hou X (Hou, Xun)
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2013/03/26
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates
期刊论文
OAI收割
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:
Pan X
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2011/09/14
CHEMICAL-VAPOR-DEPOSITION
PHASE EPITAXY
ALN INTERLAYERS
FILMS
STRESS
LAYERS
DISLOCATIONS
REDUCTION
DENSITY
DIODES
Computational Investigation of InxGa1-xN/InN Quantum-Dot Intermediate-Band Solar Cell
期刊论文
OAI收割
chinese physics letters, 2011, 卷号: 28, 期号: 1, 页码: article no.18401
作者:
Deng QW
;
Hou QF
;
Bi Y
;
Yin HB
收藏
  |  
浏览/下载:41/5
  |  
提交时间:2011/07/05
EFFICIENCY
Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN
期刊论文
OAI收割
applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: article no.102104
作者:
Deng QW
收藏
  |  
浏览/下载:47/5
  |  
提交时间:2011/07/05
QUANTUM-WELL-STRUCTURE
ALGAN/GAN HETEROSTRUCTURE
YELLOW LUMINESCENCE
DEEP LEVELS
TRAP
PERFORMANCE
FREQUENCY
EPILAYERS
ORIGIN
DIODES
Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions
期刊论文
OAI收割
applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 1, 页码: 429-432
作者:
Zhang ML
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  |  
浏览/下载:65/4
  |  
提交时间:2011/07/07
GaN
Ferromagnetic
Implantation
Annealing
The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure
期刊论文
OAI收割
applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
作者:
Bi Y
;
Lin DF
;
Peng EC
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2011/09/14
2-DIMENSIONAL ELECTRON-GAS
ALGAN/GAN/INGAN/GAN DH-HEMTS
MILLIMETER-WAVE APPLICATIONS
FIELD-EFFECT TRANSISTORS
HETEROJUNCTION FETS
HETEROSTRUCTURES
PASSIVATION
CONFINEMENT
PERFORMANCE
BARRIERS
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer
期刊论文
OAI收割
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467
作者:
Pan X
收藏
  |  
浏览/下载:81/5
  |  
提交时间:2011/07/05
Sandwich structure
Stress
Aluminum nitride
Gallium nitride
Silicon
PHONON DEFORMATION POTENTIALS
WURTZITE ALN
SILICON
STRESS
TRANSISTORS
EPITAXY
LAYERS
Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN
期刊论文
OAI收割
chinese physics letters, 2011, 卷号: 28, 期号: 3, 页码: article no.37102
Hou QF
;
Wang XL
;
Xiao HL
;
Wang CM
;
Yang CB
;
Yin HB
;
Li JM
;
Wang ZG
收藏
  |  
浏览/下载:40/4
  |  
提交时间:2011/07/05
EPITAXIAL LAYERS
PHOTOLUMINESCENCE
ABSORPTION
CARBON
BAND
InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage
期刊论文
OAI收割
chinese physics b, 2011, 卷号: 20, 期号: 2, 页码: article no.28402
作者:
Hou QF
;
Yin HB
收藏
  |  
浏览/下载:43/6
  |  
提交时间:2011/07/05
InGaN
solar cell
multiple quantum wells
IN1-XGAXN ALLOYS
BAND-GAP
INN
Theoretical study on InxGa1-xN/GaN quantum dots solar cell
期刊论文
OAI收割
physica b-condensed matter, 2011, 卷号: 406, 期号: 1, 页码: 73-76
作者:
Hou QF
;
Yin HB
;
Deng QW
收藏
  |  
浏览/下载:92/9
  |  
提交时间:2011/07/05
Efficiency
Quantum dot
GaN
EFFICIENCY