中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 期刊论文 [11]
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Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates 期刊论文  OAI收割
nanoscale research letters, 2011, 卷号: 6, 页码: 463
Li, TF; Chen, YH; Lei, W; Zhou, XL; Luo, S; Hu, YZ; Wang, LJ; Yang, T; Wang, ZG
收藏  |  浏览/下载:18/0  |  提交时间:2012/02/06
The role of zinc dopant and the temperature effect on the controlled growth of InNnanorods in metal-organic chemical vapor deposition system 期刊论文  OAI收割
crystengcomm, 2010, 卷号: 12, 期号: 11, 页码: 3936-3941
Song HP (Song Huaping); Guo Y (Guo Yan); Yang A (Yang Anli); Wei HY (Wei Hongyuan); Xu XQ (Xu Xiaoqing); Liu JM (Liu Jianming); Yang SY (Yang Shaoyan); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载:23/0  |  提交时间:2010/11/14
Generation and suppression of deep level defects in InP 期刊论文  OAI收割
acta physica sinica, 2007, 卷号: 56, 期号: 3, 页码: 1476-1479
Zhao YW (Zhao You-Wen); Dong ZY (Dong Zhi-Yuan)
收藏  |  浏览/下载:33/0  |  提交时间:2010/03/29
Growth of high quality semi-insulating InP single crystal by suppression of compensation defects 期刊论文  OAI收割
journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 75-77
Zhao YW; Dong ZY; Duan ML; Sun WR; Yang ZX
收藏  |  浏览/下载:38/0  |  提交时间:2010/04/11
Electron irradiation-induced defects in InP pre-annealed at high temperature 期刊论文  OAI收割
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 380-383
Zhao YW (Zhao Y. W.); Dong ZY (Dong Z. Y.); Deng AH (Deng A. H.)
收藏  |  浏览/下载:42/0  |  提交时间:2010/04/11
Raman scattering from GaP nanowires 期刊论文  OAI收割
european physical journal b, 2005, 卷号: 46, 期号: 4, 页码: 507-513
de la Chapelle, ML; Han, HX; Tang, CC
收藏  |  浏览/下载:92/19  |  提交时间:2010/03/17
Photoluminescence characteristics of InP annealed in phosphorus and iron phosphide ambiences 期刊论文  OAI收割
materials science in semiconductor processing, 2005, 卷号: 8, 期号: 4, 页码: 531-535
Zhao, YW; Dong, HW; Li, JM; Ling, LY
收藏  |  浏览/下载:38/11  |  提交时间:2010/03/17
Annealing and activation of silicon implanted in semi-insulating InP substrates 期刊论文  OAI收割
materials science in semiconductor processing, 2003, 卷号: 6, 期号: 4, 页码: 215-218
Dong HW; Zhao YW; Li JM
收藏  |  浏览/下载:48/0  |  提交时间:2010/08/12
Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy 期刊论文  OAI收割
journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 364-369
Dong HW; Zhao YW; Zeng YP; Jiao JH; Li JM; Lin LY
收藏  |  浏览/下载:45/0  |  提交时间:2010/08/12
Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances 期刊论文  OAI收割
journal of crystal growth, 2003, 卷号: 259, 期号: 1-2, 页码: 1-7
Dong ZY; Zhao YW; Zeng YP; Duan ML; Sun WR; Jiao JH; Lin LY
收藏  |  浏览/下载:351/16  |  提交时间:2010/08/12