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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [11]
采集方式
OAI收割 [11]
内容类型
期刊论文 [11]
发表日期
2011 [1]
2010 [1]
2007 [1]
2006 [2]
2005 [2]
2003 [3]
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学科主题
半导体材料 [11]
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学科主题:半导体材料
内容类型:期刊论文
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Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates
期刊论文
OAI收割
nanoscale research letters, 2011, 卷号: 6, 页码: 463
Li, TF
;
Chen, YH
;
Lei, W
;
Zhou, XL
;
Luo, S
;
Hu, YZ
;
Wang, LJ
;
Yang, T
;
Wang, ZG
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2012/02/06
RAMAN-SCATTERING
SEMICONDUCTING NANOWIRES
OPTOELECTRONIC DEVICES
PHOSPHIDE NANOWIRES
OPTICAL PHONONS
SILICON
CRYSTALS
SPECTRA
The role of zinc dopant and the temperature effect on the controlled growth of InNnanorods in metal-organic chemical vapor deposition system
期刊论文
OAI收割
crystengcomm, 2010, 卷号: 12, 期号: 11, 页码: 3936-3941
Song HP (Song Huaping)
;
Guo Y (Guo Yan)
;
Yang A (Yang Anli)
;
Wei HY (Wei Hongyuan)
;
Xu XQ (Xu Xiaoqing)
;
Liu JM (Liu Jianming)
;
Yang SY (Yang Shaoyan)
;
Liu XL (Liu Xianglin)
;
Zhu QS (Zhu Qinsheng)
;
Wang ZG (Wang Zhanguo)
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2010/11/14
INDIUM-PHOSPHIDE NANOWIRES
Generation and suppression of deep level defects in InP
期刊论文
OAI收割
acta physica sinica, 2007, 卷号: 56, 期号: 3, 页码: 1476-1479
Zhao YW (Zhao You-Wen)
;
Dong ZY (Dong Zhi-Yuan)
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2010/03/29
indium phosphide
Growth of high quality semi-insulating InP single crystal by suppression of compensation defects
期刊论文
OAI收割
journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 75-77
Zhao YW
;
Dong ZY
;
Duan ML
;
Sun WR
;
Yang ZX
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2010/04/11
indium phosphide
defect
semi-insualting
STIMULATED CURRENT SPECTROSCOPY
CURRENT TRANSIENT SPECTROSCOPY
SEMI-INSULATING INP
DEEP-LEVEL DEFECTS
FE
Electron irradiation-induced defects in InP pre-annealed at high temperature
期刊论文
OAI收割
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 380-383
Zhao YW (Zhao Y. W.)
;
Dong ZY (Dong Z. Y.)
;
Deng AH (Deng A. H.)
收藏
  |  
浏览/下载:42/0
  |  
提交时间:2010/04/11
indium phosphide
defect
irradiation
THERMALLY STIMULATED CURRENT
UNDOPED SEMIINSULATING INP
DEEP-LEVEL DEFECTS
FRENKEL PAIRS
FE
SPECTROSCOPY
PHOSPHIDE
AMBIENT
TRAPS
Raman scattering from GaP nanowires
期刊论文
OAI收割
european physical journal b, 2005, 卷号: 46, 期号: 4, 页码: 507-513
de la Chapelle, ML
;
Han, HX
;
Tang, CC
收藏
  |  
浏览/下载:92/19
  |  
提交时间:2010/03/17
GALLIUM-PHOSPHIDE NANOWIRES
Photoluminescence characteristics of InP annealed in phosphorus and iron phosphide ambiences
期刊论文
OAI收割
materials science in semiconductor processing, 2005, 卷号: 8, 期号: 4, 页码: 531-535
Zhao, YW
;
Dong, HW
;
Li, JM
;
Ling, LY
收藏
  |  
浏览/下载:38/11
  |  
提交时间:2010/03/17
indium phosphide
Annealing and activation of silicon implanted in semi-insulating InP substrates
期刊论文
OAI收割
materials science in semiconductor processing, 2003, 卷号: 6, 期号: 4, 页码: 215-218
Dong HW
;
Zhao YW
;
Li JM
收藏
  |  
浏览/下载:48/0
  |  
提交时间:2010/08/12
semi-insulating InP
ion implantation
silicon
annealing
activation
SI+-IMPLANTATION
PHOSPHIDE VAPOR
UNDOPED INP
FE
WAFERS
UNIFORMITY
PRESSURE
Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy
期刊论文
OAI收割
journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 364-369
Dong HW
;
Zhao YW
;
Zeng YP
;
Jiao JH
;
Li JM
;
Lin LY
收藏
  |  
浏览/下载:45/0
  |  
提交时间:2010/08/12
diffusion
interfaces
substrates
molecular beam epitaxy
phosphides
semiconducting indium phosphide
UNDOPED SEMIINSULATING INP
CHEMICAL-VAPOR-DEPOSITION
PHOSPHIDE VAPOR
FE
INTERFACE
PHOTOLUMINESCENCE
WAFER
UNIFORMITY
DIFFUSION
PRESSURE
Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances
期刊论文
OAI收割
journal of crystal growth, 2003, 卷号: 259, 期号: 1-2, 页码: 1-7
Dong ZY
;
Zhao YW
;
Zeng YP
;
Duan ML
;
Sun WR
;
Jiao JH
;
Lin LY
收藏
  |  
浏览/下载:351/16
  |  
提交时间:2010/08/12
annealing
defects
etching
semiconducting indium phosphide
FE-DOPED INP
SEMIINSULATING INP
INDIUM-PHOSPHIDE
DEFECTS
DIFFUSION
CRYSTALS
WAFERS