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• 物理研究所 [14]
• 高能物理研究所 [11]
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• 期刊论文 [39]

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浏览/检索结果: 共39条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Study on the affecting factors of material removal mechanism and damage behavior of shear rheological polishing of single crystal silicon carbide 期刊论文  OAI收割 JOURNAL OF MANUFACTURING PROCESSES, 2024, 卷号: 112, 页码: 225-237 作者:  Chen, HY;  Wu, ZC;  Hong, BB;  Hang, W;  Zhang, P   |  收藏  |   Microstructure evolution and properties evaluation of a novel bondline based on Cu@Sn Preform during temperature treatment 期刊论文  OAI收割 2018 19TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT), 2018, 页码: 1709, 1715 作者:  Xu, HY;  Li, JQ;  Ning, PQ;  Xu, J;  Xu, Hongyan   |  收藏  |   Dietary change in seabirds on Guangjin Island, South China Sea, over the past 1200 years inferred from stable isotope analysis 期刊论文  OAI收割 HOLOCENE, 2017, 卷号: 27, 期号: 3, 页码: 331-338 作者:  Wu, LB;  Liu, XD;  Fu, PQ;  Xu, LQ;  Li, DN 收藏  |   The Influence of Graded AlGaN Buffer Thickness for Crack-Free GaN on Si(111) Substrates by using MOCVD 期刊论文  OAI收割 CHINESE PHYSICS LETTERS, 2013, 卷号: 30, 期号: 2 Xu, PQ; Jiang, Y; Ma, ZG; Deng, Z; Lu, TP; Du, CH; Fang, YT; Zuo, P; Chen, H 收藏  |   Improvement of Breakdown Characteristics of a GaN HEMT with AlGaN Buffer Layer 期刊论文  OAI收割 JOURNAL OF ELECTRONIC MATERIALS, 2012, 卷号: 41, 期号: 3, 页码: 471 Chen, Y; Jiang, Y; Xu, PQ; Ma, ZG; Wang, XL; He, T; Peng, MZ; Luo, WJ; Liu, XY; Wang, L; Jia, HQ; Chen, H 收藏  |   Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD 期刊论文  OAI收割 NANOSCALE RESEARCH LETTERS, 2012, 卷号: 7 Xu, PQ; Jiang, Y; Chen, Y; Ma, ZG; Wang, XL; Deng, Z; Li, Y; Jia, HQ; Wang, WX; Chen, H 收藏  |   Stress Control in GaN Grown on 6H-SiC by Metalorganic Chemical Vapor Deposition 期刊论文  OAI收割 CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 4 Chen, Y; Jiang, Y; Xu, PQ; Ma, ZG; Wang, XL; Wang, L; Jia, HQ; Chen, H 收藏  |   The Optical and Electrical Properties of GaN Epitaxial Films with SiNx Interlayers Inserted at Different Position 期刊论文  OAI收割 发光学报, 2011, 卷号: 32, 期号: 10, 页码: 1014 Ma ZG; Wang WX; Wang XL; Chen Y; Xu PQ; Jiang Y; Jia HQ; Chen H 收藏  |   The influence of pressure on the growth of a-plane GaN on r-plane sapphire substrates by MOCVD 期刊论文  OAI收割 SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2011, 卷号: 54, 期号: 3, 页码: 446 He, T; Li, H; Dai, LG; Wang, XL; Chen, Y; Ma, ZG; Xu, PQ; Jiang, Y; Wang, L; Jia, HQ; Wang, WX; Chen, H 收藏  |   国产SiC 衬底上利用AlN 缓冲层生长高质量GaN 外延薄膜 期刊论文  OAI收割 发光学报, 2011, 卷号: 32, 期号: 9, 页码: 896 Chen Y,Wang WX, Li Y, Jiang Y, Xu PQ, Ma ZG, Song J, Chen H 收藏  |