中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共39条,第1-10条 帮助

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Study on the affecting factors of material removal mechanism and damage behavior of shear rheological polishing of single crystal silicon carbide 期刊论文  OAI收割
JOURNAL OF MANUFACTURING PROCESSES, 2024, 卷号: 112, 页码: 225-237
作者:  
Chen, HY;  Wu, ZC;  Hong, BB;  Hang, W;  Zhang, P
  |  收藏  |  浏览/下载:1/0  |  提交时间:2026/03/18
Microstructure evolution and properties evaluation of a novel bondline based on Cu@Sn Preform during temperature treatment 期刊论文  OAI收割
2018 19TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT), 2018, 页码: 1709, 1715
作者:  
Xu, HY;  Li, JQ;  Ning, PQ;  Xu, J;  Xu, Hongyan
  |  收藏  |  浏览/下载:46/0  |  提交时间:2018/12/29
Dietary change in seabirds on Guangjin Island, South China Sea, over the past 1200 years inferred from stable isotope analysis 期刊论文  OAI收割
HOLOCENE, 2017, 卷号: 27, 期号: 3, 页码: 331-338
作者:  
Wu, LB;  Liu, XD;  Fu, PQ;  Xu, LQ;  Li, DN
收藏  |  浏览/下载:62/0  |  提交时间:2017/09/08
The Influence of Graded AlGaN Buffer Thickness for Crack-Free GaN on Si(111) Substrates by using MOCVD 期刊论文  OAI收割
CHINESE PHYSICS LETTERS, 2013, 卷号: 30, 期号: 2
Xu, PQ; Jiang, Y; Ma, ZG; Deng, Z; Lu, TP; Du, CH; Fang, YT; Zuo, P; Chen, H
收藏  |  浏览/下载:54/0  |  提交时间:2014/01/17
Improvement of Breakdown Characteristics of a GaN HEMT with AlGaN Buffer Layer 期刊论文  OAI收割
JOURNAL OF ELECTRONIC MATERIALS, 2012, 卷号: 41, 期号: 3, 页码: 471
Chen, Y; Jiang, Y; Xu, PQ; Ma, ZG; Wang, XL; He, T; Peng, MZ; Luo, WJ; Liu, XY; Wang, L; Jia, HQ; Chen, H
收藏  |  浏览/下载:68/0  |  提交时间:2013/09/17
Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD 期刊论文  OAI收割
NANOSCALE RESEARCH LETTERS, 2012, 卷号: 7
Xu, PQ; Jiang, Y; Chen, Y; Ma, ZG; Wang, XL; Deng, Z; Li, Y; Jia, HQ; Wang, WX; Chen, H
收藏  |  浏览/下载:56/0  |  提交时间:2013/09/17
Stress Control in GaN Grown on 6H-SiC by Metalorganic Chemical Vapor Deposition 期刊论文  OAI收割
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 4
Chen, Y; Jiang, Y; Xu, PQ; Ma, ZG; Wang, XL; Wang, L; Jia, HQ; Chen, H
收藏  |  浏览/下载:57/0  |  提交时间:2013/09/24
The Optical and Electrical Properties of GaN Epitaxial Films with SiNx Interlayers Inserted at Different Position 期刊论文  OAI收割
发光学报, 2011, 卷号: 32, 期号: 10, 页码: 1014
Ma ZG; Wang WX; Wang XL; Chen Y; Xu PQ; Jiang Y; Jia HQ; Chen H
收藏  |  浏览/下载:21/0  |  提交时间:2013/09/23
The influence of pressure on the growth of a-plane GaN on r-plane sapphire substrates by MOCVD 期刊论文  OAI收割
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2011, 卷号: 54, 期号: 3, 页码: 446
He, T; Li, H; Dai, LG; Wang, XL; Chen, Y; Ma, ZG; Xu, PQ; Jiang, Y; Wang, L; Jia, HQ; Wang, WX; Chen, H
收藏  |  浏览/下载:56/0  |  提交时间:2013/09/23
国产SiC 衬底上利用AlN 缓冲层生长高质量GaN 外延薄膜 期刊论文  OAI收割
发光学报, 2011, 卷号: 32, 期号: 9, 页码: 896
Chen Y,Wang WX, Li Y, Jiang Y, Xu PQ, Ma ZG, Song J, Chen H
收藏  |  浏览/下载:25/0  |  提交时间:2013/09/23