机构

• 半导体研究所 [18]
• 物理研究所 [3]
• 长春光学精密机械与物... [1]
• 上海微系统与信息技术... [1]
• 高能物理研究所 [1]

采集方式

• OAI收割 [20]
• iSwitch采集 [4]

内容类型

• 期刊论文 [22]
• 会议论文 [2]

发表日期

• 2011 [3]
• 2010 [1]
• 2007 [1]
• 2006 [7]
• 2005 [1]
• 2003 [1]
• 更多

学科主题

• 半导体材料 [8]
• 半导体物理 [4]
• Engineerin... [1]
• Materials ... [1]
• 光电子学 [1]

筛选

浏览/检索结果: 共24条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Preparation and photoluminescence study of patterned substrate quantum wires 期刊论文  iSwitch采集 Acta physica sinica, 2011, 卷号: 60, 期号: 2, 页码: 5 作者:  Wang Xiu-Ping;  Yang Xiao-Hong;  Han Qin;  Ju Yan-Ling;  Du Yun 收藏  |   Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment 期刊论文  OAI收割 journal of applied physics, 2011, 卷号: 109, 期号: 8, 页码: article no.83501 作者:  Zhou GY;  Zhang HY;  Xu B;  Ye XL 收藏  |   Preparation and photoluminescence study of patterned substrate quantum wires 期刊论文  OAI收割 acta physica sinica, ACTA PHYSICA SINICA, 2011, 2011, 卷号: 60, 60, 期号: 2, 页码: article no.20703, Article no.20703 作者:  Wang XP;  Yang XH;  Han Q;  Ju YL;  Du Y   |  收藏  |   Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy 期刊论文  OAI收割 applied surface science, 2010, 卷号: 256, 期号: 22, 页码: 6881-6886 Zhao J (Zhao Jie); Zeng YP (Zeng Yiping); Liu C (Liu Chao); Cui LJ (Cui Lijie); Li YB (Li Yanbo) 收藏  |   Room temperature photoluminescence evaluation of In0.29Al0.7As/In0.3Ga0.7As/GaAsmetamorphic high electron mobility transistor structures 期刊论文  OAI收割 SOLID-STATE ELECTRONICS, 2007, 卷号: 51, 期号: 1, 页码: 85 Shang, XZ; Wu, J; Wang, WC; Wang, WX; Huang, Q; Zhou, JM 收藏  |   Selective growth of inas islands on patterned gaas (100) substrate 期刊论文  iSwitch采集 Superlattices and microstructures, 2006, 卷号: 39, 期号: 5, 页码: 446-453 作者:  Cui, CX;  Chen, YH;  Ren, YY;  Xu, B;  Jin, P 收藏  |   Preparation and afm characterization of self-ordered porous alumina films on semi-insulated gaas substrate 期刊论文  iSwitch采集 Materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 337-340 作者:  Zhou, H. Y.;  Qu, S. C.;  Wang, Z. G.;  Liang, L. Y.;  Cheng, B. C. 收藏  |   Low temperature step-graded InAlAs/GaAs metamorphic buner layers grown by molecular beam epitaxy 期刊论文  OAI收割 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2006, 卷号: 39, 期号: 9, 页码: 1800 Shang, XZ; Wu, SD; Liu, C; Wang, WX; Guo, LW; Huang, Q; Zhou, JM 收藏  |   Selective growth of InAs islands on patterned GaAs (100) substrate 期刊论文  OAI收割 superlattices and microstructures, 2006, 卷号: 39, 期号: 5, 页码: 446-453 作者:  Xu B;  Jin P 收藏  |   Effect of GaAS(100) 2 degrees surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots 期刊论文  OAI收割 applied surface science, 2006, 卷号: 252, 期号: 23, 页码: 8126-8130 Liang S (Liang S.); Zhu HL (Zhu H. L.); Ye XL (Ye X. L.); Wang W (Wang W.) 收藏  |