机构

• 半导体研究所 [16]
• 物理研究所 [2]
• 金属研究所 [1]

采集方式

• OAI收割 [19]

内容类型

• 期刊论文 [14]
• 会议论文 [5]

发表日期

• 2006 [4]
• 2005 [1]
• 2004 [3]
• 2003 [6]
• 2002 [4]
• 1997 [1]
• 更多

学科主题

• 半导体材料 [13]
• 半导体物理 [3]

筛选

浏览/检索结果: 共19条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Theoretical explanation of the EPR parameters of tetragonal Ti3+ centers in ZnSe and CdS0.75Se0.25 semiconductors 期刊论文  OAI收割 Zeitschrift Fur Naturforschung Section a-a Journal of Physical Sciences, 2006, 卷号: 61, 期号: 9, 页码: 505-508 X. X. Wu; W. L. Feng; Q. Zhou; W. C. Zheng 收藏  |  浏览/下载：20/0  |  提交时间：2012/04/14 crystal- and ligand-field theory  electron paramagnetic resonance  local  lattice distortion  II-VI semiconductors  Ti3+  paramagnetic-resonance parameters  atomic screening constants  scf  functions  crystals  defect  model  ions  inp  cds  fe   Recent research results on deep level defects in semi-insulating InP - Application to improve material quality 会议论文  OAI收割 12th international conference on indium phosphide and related materials, princeton, nj, may 07-11, 2006 Zhao, YW (Zhao, Youwen); Dong, ZY (Dong, Zhiyuan); Dong, HW (Dong, Hongwei); Sun, NF (Sun, Niefeng); Sun, TN (Sun, Tongnian) 收藏  |  浏览/下载：66/12  |  提交时间：2010/03/29 STIMULATED CURRENT SPECTROSCOPY  CURRENT TRANSIENT SPECTROSCOPY  FE-DOPED INP  POINT-DEFECTS  COMPENSATION  TEMPERATURE  DONORS  TRAPS   Growth of high quality semi-insulating InP single crystal by suppression of compensation defects 期刊论文  OAI收割 journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 75-77 Zhao YW; Dong ZY; Duan ML; Sun WR; Yang ZX 收藏  |  浏览/下载：46/0  |  提交时间：2010/04/11 indium phosphide  defect  semi-insualting  STIMULATED CURRENT SPECTROSCOPY  CURRENT TRANSIENT SPECTROSCOPY  SEMI-INSULATING INP  DEEP-LEVEL DEFECTS  FE   Electron irradiation-induced defects in InP pre-annealed at high temperature 期刊论文  OAI收割 materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 380-383 Zhao YW (Zhao Y. W.); Dong ZY (Dong Z. Y.); Deng AH (Deng A. H.) 收藏  |  浏览/下载：51/0  |  提交时间：2010/04/11 indium phosphide  defect  irradiation  THERMALLY STIMULATED CURRENT  UNDOPED SEMIINSULATING INP  DEEP-LEVEL DEFECTS  FRENKEL PAIRS  FE  SPECTROSCOPY  PHOSPHIDE  AMBIENT  TRAPS   Improvement of the electrical property of semi-insulating InP by suppression of compensation defects 会议论文  OAI收割 17th international conference on indium phosphide and related materials, glasgow, scotland, may 08-12, 2005 Zhao, YW; Dong, ZY 收藏  |  浏览/下载：234/68  |  提交时间：2010/03/29 ENCAPSULATED CZOCHRALSKI INP  SEMICONDUCTOR COMPOUND-CRYSTALS  STIMULATED CURRENT SPECTROSCOPY  CURRENT TRANSIENT SPECTROSCOPY  DEEP-LEVEL DEFECTS  ANNEALING AMBIENT  POINT-DEFECTS  FE  PHOSPHIDE  DONORS   Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration 会议论文  OAI收割 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 Zhao, YW; Dong, ZY; Zhang, YH; Li, CJ 收藏  |  浏览/下载：181/52  |  提交时间：2010/03/29 DEEP-LEVEL DEFECTS  FE-DOPED INP  GROWN INP  SPECTROSCOPY  RESONANCE  WAFER   Annealing ambient controlled deep defect formation in InP 会议论文  OAI收割 10th international conference on defects - recognition, imaging and physics in semiconductors (drip 10), batz sur mer, france, sep 29-oct 02, 2003 Zhao YW; Dong ZY; Duan ML; Sun WR; Zeng YP; Sun NF; Sun TN 收藏  |  浏览/下载：31/1  |  提交时间：2010/10/29 FE-DOPED INP  SEMIINSULATING INP  POINT-DEFECTS  PRESSURE  WAFERS  TRAPS   Annealing ambient controlled deep defect formation in InP 期刊论文  OAI收割 european physical journal-applied physics, 2004, 卷号: 27, 期号: 1-3, 页码: 167-169 Zhao, YW; Dong, ZY; Duan, ML; Sun, WR; Zeng, YP; Sun, NF; Sun, TN 收藏  |  浏览/下载：368/63  |  提交时间：2010/03/09 FE-DOPED INP   Annealing and activation of silicon implanted in semi-insulating InP substrates 期刊论文  OAI收割 MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2003, 卷号: 6, 期号: 4, 页码: 215 Dong, HW; Zhao, YW; Li, JM 收藏  |  浏览/下载：31/0  |  提交时间：2013/09/17 SI+-IMPLANTATION  PHOSPHIDE VAPOR  UNDOPED INP  FE  WAFERS  UNIFORMITY  PRESSURE   Annealing and activation of silicon implanted in semi-insulating InP substrates 期刊论文  OAI收割 materials science in semiconductor processing, 2003, 卷号: 6, 期号: 4, 页码: 215-218 Dong HW; Zhao YW; Li JM 收藏  |  浏览/下载：66/0  |  提交时间：2010/08/12 semi-insulating InP  ion implantation  silicon  annealing  activation  SI+-IMPLANTATION  PHOSPHIDE VAPOR  UNDOPED INP  FE  WAFERS  UNIFORMITY  PRESSURE