机构

• 半导体研究所 [9]
• 物理研究所 [3]
• 微电子研究所 [1]
• 上海微系统与信息技术... [1]
• 近代物理研究所 [1]

采集方式

• OAI收割 [15]

内容类型

• 期刊论文 [14]
• 外文期刊 [1]

发表日期

• 2015 [1]
• 2010 [3]
• 2009 [1]
• 2006 [4]
• 2003 [2]
• 2002 [1]
• 更多

学科主题

• 半导体材料 [5]
• 半导体物理 [3]
• Materials ... [1]
• 光电子学 [1]

筛选

浏览/检索结果: 共15条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Graphene-GaN Schottky diodes 期刊论文  OAI收割 NANO RESEARCH, 2015, 卷号: 8, 期号: 4, 页码: 1327-1338 作者:  Kim Seongjun;  Seo Tae Hoon;  Kim Myung Jong;  Song Keun Man;  Suh EunKyung   |  收藏  |   Effect of radio frequency power on the inductively coupled plasma etched Al0.65Ga0.35N surface 期刊论文  OAI收割 APPLIED SURFACE SCIENCE, 2010, 卷号: 256, 期号: 21, 页码: 6254 Bai, Y; Liu, J; Ma, P; Li, B; Zhu, J; Guo, LW; Liu, XY 收藏  |   Effect of radio frequency power on the inductively coupled plasma etched Al0.65Ga0.35N surface 外文期刊  OAI收割 2010 作者:  Liu, XY;  Bai, Y;  Liu, J;  Ma, P;  Li, B   |  收藏  |   Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN 期刊论文  OAI收割 chinese physics letters, 2010, 卷号: 27, 期号: 5, 页码: art. no. 057104 Hou QF (Hou Qi-Feng); Wang XL (Wang Xiao-Liang); Xiao; HL (Xiao Hong-Ling); Wang CM (Wang Cui-Mei); Yang CB (Yang Cui-Bai); Li JM (Li Jin-Min) 收藏  |   Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations 期刊论文  OAI收割 journal of physics d-applied physics, 2009, 卷号: 42, 期号: 15, 页码: art. no. 155403 作者:  Li JB;  Hou QF 收藏  |   Deep level transient spectroscopy studies of Er and Pr implanted GaN films 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2006, 卷号: 55, 期号: 3, 页码: 1407 Song, SF; Chen, WD; Xu, ZJ; Xu, XR 收藏  |   Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts 期刊论文  OAI收割 applied physics letters, 2006, 卷号: 89, 期号: 3, 页码: art.no.033503 Wang RX (Wang R. X.); Xu SJ (Xu S. J.); Djurisic AB (Djurisic A. B.); Beling CD (Beling C. D.); Cheung CK (Cheung C. K.); Cheung CH (Cheung C. H.); Fung S (Fung S.); Zhao DG (Zhao D. G.); Yang H (Yang H.); Tao XM (Tao X. M.) 收藏  |   Deep level transient spectroscopy studies of Er and Pr implanted GaN films 期刊论文  OAI收割 acta physica sinica, 2006, 卷号: 55, 期号: 3, 页码: 1407-1412 Song SF; Chen WD; Xu ZJ; Xu XR 收藏  |   Growth and characterization of semi-insulating GaN films grown by MOCVD 期刊论文  OAI收割 journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 14-18 Fang CB; Wang XL; Hu GX; Wang JX; Wang CM; Li JM 收藏  |   Void formation and failure in InGaN/AlGaN double heterostructures 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 253, 期号: 1-4, 页码: 404 Wang, YG; Li, W; Han, PD; Zhang, Z 收藏  |