中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共24条,第1-10条 帮助

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Gain scheduling consensus of multi-agent systems subject to actuator saturation 期刊论文  OAI收割
INTERNATIONAL JOURNAL OF CONTROL, 2020, 卷号: 93, 期号: 4, 页码: 771-782
作者:  
Chu, Hongjun;  Chen, Jianliang;  Wei, Qinglai;  Zhang, Weidong
  |  收藏  |  浏览/下载:24/0  |  提交时间:2020/06/02
Robust global consensus tracking of linear multi-agent systems with input saturation via scheduled low-and-high gain feedback 期刊论文  OAI收割
IET CONTROL THEORY AND APPLICATIONS, 2019, 卷号: 13, 期号: 1, 页码: 69-77
作者:  
Chu, Hongjun;  Chen, Jianliang;  Wei, Qinglai;  Zhang, Weidong
  |  收藏  |  浏览/下载:64/0  |  提交时间:2019/07/12
Mechanism of Degradation Rate on the Irradiated Double-Polysilicon Self-Aligned Bipolar Transistor 期刊论文  OAI收割
ELECTRONICS, 2019, 卷号: 8, 期号: 6, 页码: 1-8
作者:  
Liu, MH (Liu, Mohan)[ 1,2 ];  Lu, W (Lu, Wu)[ 1 ];  Yu, X (Yu, Xin)[ 1,2 ];  Wang, X (Wang, Xin)[ 1 ];  Li, XL (Li, Xiaolong)[ 1 ]
  |  收藏  |  浏览/下载:26/0  |  提交时间:2020/04/03
Accurate Measurement of Gain Saturation of Superconductor-Insulator-Superconductor Mixers with Logarithmic Power Detectors 期刊论文  OAI收割
JOURNAL OF LOW TEMPERATURE PHYSICS, 2018, 卷号: 193, 期号: 3-4, 页码: 402-407
作者:  
Shan, Wenlei
  |  收藏  |  浏览/下载:15/0  |  提交时间:2019/04/08
Semi-global output consensus of a group of linear systems in the presence of external disturbances and actuator saturation: An output regulation approach 期刊论文  OAI收割
INTERNATIONAL JOURNAL OF ROBUST AND NONLINEAR CONTROL, 2016, 卷号: 26, 期号: 7, 页码: 1353-1375
作者:  
Zhao, Zhiyun;  Hong, Yiguang;  Lin, Zongli
  |  收藏  |  浏览/下载:20/0  |  提交时间:2018/07/30
Characteristics of InGaN-based superluminescent diodes with one-sided oblique cavity facet 期刊论文  OAI收割
CHINESE SCIENCE BULLETIN, 2014, 卷号: 59, 期号: 16, 页码: 1903-1906
作者:  
Li DY(李德尧);  Wang HB(王怀兵);  Liu JP(刘建平);  Zhang SM(张书明)
收藏  |  浏览/下载:32/0  |  提交时间:2014/12/08
Investigation of gain recovery for InAs/GaAs quantum dot semiconductor optical amplifiers by rate equation simulation 期刊论文  OAI收割
optical and quantum electronics, 2009, 卷号: 41, 期号: 8, 页码: 613-626
Xiao JL (Xiao Jin-Long); Yang YD (Yang Yue-De); Huang YZ (Huang Yong-Zhen)
收藏  |  浏览/下载:105/2  |  提交时间:2010/08/17
Temperature sensitivity dependence on cavity length in p-type doped and undoped 1.3-mu m inas-gaas quantum-dot lasers 期刊论文  iSwitch采集
Ieee photonics technology letters, 2008, 卷号: 20, 期号: 21-24, 页码: 1860-1862
作者:  
Cao, Yulian;  Yang, Tao;  Ji, Haiming;  Ma, Wenquan;  Cao, Qing
收藏  |  浏览/下载:25/0  |  提交时间:2019/05/12
Temperature Sensitivity Dependence on Cavity Length in p-Type Doped and Undoped 1.3-mu m InAs-GaAs Quantum-Dot Lasers 期刊论文  OAI收割
ieee photonics technology letters, 2008, 卷号: 20, 期号: 21-24, 页码: 1860-1862
作者:  
Yang T;  Cao YL;  Ma WQ
收藏  |  浏览/下载:246/72  |  提交时间:2010/03/08
The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文  OAI收割
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
作者:  
Li J.;  Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Li J.
收藏  |  浏览/下载:24/0  |  提交时间:2013/03/25
The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser  and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power  the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime  so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells  and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger  the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs  This three QWs structure can add the quantum state of QW  increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.