机构

• 半导体研究所 [44]

采集方式

• OAI收割 [44]

内容类型

• 期刊论文 [36]
• 会议论文 [8]

发表日期

• 2011 [7]
• 2010 [2]
• 2009 [1]
• 2008 [1]
• 2007 [2]
• 2006 [4]
• 更多

学科主题

• 半导体材料 [44]

筛选

浏览/检索结果: 共44条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文  OAI收割 nanoscale research letters, 2011, 卷号: 6, 页码: article no.69 作者:  Song HP;  Wei HY;  Li CM;  Jiao CM 收藏  |  浏览/下载：65/4  |  提交时间：2011/07/05 CATHODOLUMINESCENCE CHARACTERIZATION  GALLIUM NITRIDE  STRESSES  LAYERS  HETEROSTRUCTURE  DEPOSITION  CONSTANTS  MECHANISM  SAPPHIRE  STRAIN   MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文  OAI收割 journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117 作者:  Jia CH;  Song HP 收藏  |  浏览/下载：118/2  |  提交时间：2011/07/05 Anisotropy  Crystal morphology  Metalorganic chemical vapor deposition  a-Plane InN  INDIUM NITRIDE  MOVPE GROWTH  CUBIC INN  SAPPHIRE  GAN  MBE   Microwave Study of FeSe(0.3)Te(0.7) Thin Film by TE(011)-Mode Sapphire Dielectric Resonator 期刊论文  OAI收割 ieee transactions on applied superconductivity, 2011, 卷号: 21, 期号: 3, 页码: 599-601 Wu, Y; Zhou, SY; Wang, XY; Cao, LX; Zhang, XQ; Luo, S; He, YS; Barannik, AA; Cherpak, NT; Skresanov, VN 收藏  |  浏览/下载：17/0  |  提交时间：2012/02/06 Cavity resonator  microwave measurement  multi-gap  node   Microwave Study of FeSe0.3Te0.7 Thin Film by TE011-Mode Sapphire Dielectric Resonator 期刊论文  OAI收割 ieee transactions on applied superconductivity, 2011, 卷号: 21, 期号: 3, 页码: 599-601 作者:  Wang XY 收藏  |  浏览/下载：56/4  |  提交时间：2011/07/15 Cavity resonator  microwave measurement  multi-gap  node   Quantitative surface enhanced Raman scattering detection based on the "sandwich" structure substrate 期刊论文  OAI收割 spectrochimica acta part a-molecular and biomolecular spectroscopy, 2011, 卷号: 79, 期号: 3, 页码: 625-630 作者:  Tang AW 收藏  |  浏览/下载：82/5  |  提交时间：2011/07/15 SILVER NANORODS  HOT-SPOTS  ACTIVE SUBSTRATE  NANOWIRE ARRAYS  SPECTROSCOPY  SERS  NANOPARTICLES  SENSITIVITY  REDUCTION  STABILITY   Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device 期刊论文  OAI收割 chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: art. no. 064202 作者:  Jin P 收藏  |  浏览/下载：43/4  |  提交时间：2011/07/15 LIGHT-EMITTING-DIODES  OPTICAL-PROPERTIES  TUNING RANGE  NM  EMISSION  SPECTRUM  SPECTROSCOPY   Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy 期刊论文  OAI收割 materials science in semiconductor processing, Materials Science in Semiconductor Processing, 2011, 2011 作者:  Hu, Qiang;  Wei, Tongbo;  Duan, Ruifei;  Yang, Jiankun;  Huo, Ziqiang   |  收藏  |  浏览/下载：30/0  |  提交时间：2012/06/14 Carrier concentration  Etching  Gallium alloys  Optical properties  Point defects  Raman spectroscopy  Semiconducting gallium compounds  Vapor phase epitaxy  Vapors  Carrier Concentration  Etching  Gallium Alloys  Optical Properties  Point Defects  Raman Spectroscopy  Semiconducting Gallium Compounds  Vapor Phase Epitaxy  Vapors   Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating 期刊论文  OAI收割 applied physics letters, 2010, 卷号: 96, 期号: 17, 页码: art. no. 171101 Cao YL (Cao Yu-Lian); Yang T (Yang Tao); Xu PF (Xu Peng-Fei); Ji HM (Ji Hai-Ming); Gu YX (Gu Yong-Xian); Wang XD (Wang Xiao-Dong); Wang Q (Wang Qing); Ma WQ (Ma Wen-Quan); Chen LH (Chen Liang-Hui) 收藏  |  浏览/下载：220/51  |  提交时间：2010/05/24 excited states  gallium arsenide  III-V semiconductors  indium compounds  laser tuning  optical films  quantum dot lasers  silicon compounds  tantalum compounds  TEMPERATURE-DEPENDENCE  THRESHOLD  PERFORMANCE  GAIN   Intrinsically limited critical temperatures of highly doped Ga1-xMnxAs thin films 期刊论文  OAI收割 physical review b, PHYSICAL REVIEW B, 2010, 2010, 卷号: 81, 81, 期号: 23, 页码: art. no. 235201, Art. No. 235201 作者:  Khazen K (Khazen Kh.);  von Bardeleben HJ (von Bardeleben H. J.)   |  收藏  |  浏览/下载：18/0  |  提交时间：2010/06/18 AMORPHOUS FERROMAGNET  Amorphous Ferromagnet  Curie-temperature  Critical-behavior  Renormalization Group  Dipolar Interactions  Critical Exponents  Magnetic Equation  Alloys  State  Semiconductors  CURIE-TEMPERATURE  CRITICAL-BEHAVIOR  RENORMALIZATION GROUP  DIPOLAR INTERACTIONS  CRITICAL EXPONENTS  MAGNETIC EQUATION  ALLOYS  STATE  SEMICONDUCTORS   Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 105, 期号: 10, 页码: art. no. 103108 作者:  Xu B;  Ye XL 收藏  |  浏览/下载：68/0  |  提交时间：2010/03/08 aluminium compounds  gallium arsenide  III-V semiconductors  internal stresses  reflectivity  semiconductor heterojunctions  semiconductor quantum wells