机构

• 半导体研究所 [36]

采集方式

• OAI收割 [36]

内容类型

• 期刊论文 [33]
• 会议论文 [3]

发表日期

• 2011 [3]
• 2010 [1]
• 2009 [3]
• 2008 [2]
• 2007 [5]
• 2006 [1]
• 更多

学科主题

• 半导体材料 [36]

筛选

浏览/检索结果: 共36条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Microscopic study on the carrier distribution in optoelectronic device structures: Experiment and modeling 期刊论文  OAI收割 proceedings of spie- the international society for optical engineering, 2011, 卷号: 8308, 页码: 83081y Huang, Wenchao; Xia, Hui; Wang, Shaowei; Deng, Honghai; Wei, Peng; Li, Lu; Liu, Fengqi; Li, Zhifeng; Li, Tianxin 收藏  |  浏览/下载：20/0  |  提交时间：2012/06/14 Capacitance  Carrier concentration  Characterization  Diffusion  Optoelectronic devices  Photodetectors  Scanning  Semiconductor device structures  Semiconductor devices  Semiconductor quantum wells  Thermionic emission   Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement 期刊论文  OAI收割 chinese physics b, 2011, 卷号: 20, 期号: 3, 页码: article no.33301 作者:  Liu XF;  Yan GG;  Zheng L;  Dong L 收藏  |  浏览/下载：37/3  |  提交时间：2011/07/05 4H-SiC  Raman scattering  LOPC modes  transport properties  SILICON-CARBIDE  LIGHT  GAP   Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy 期刊论文  OAI收割 materials science in semiconductor processing, Materials Science in Semiconductor Processing, 2011, 2011 作者:  Hu, Qiang;  Wei, Tongbo;  Duan, Ruifei;  Yang, Jiankun;  Huo, Ziqiang   |  收藏  |  浏览/下载：30/0  |  提交时间：2012/06/14 Carrier concentration  Etching  Gallium alloys  Optical properties  Point defects  Raman spectroscopy  Semiconducting gallium compounds  Vapor phase epitaxy  Vapors  Carrier Concentration  Etching  Gallium Alloys  Optical Properties  Point Defects  Raman Spectroscopy  Semiconducting Gallium Compounds  Vapor Phase Epitaxy  Vapors   Catalytic Activation of Mg-Doped GaN by Hydrogen Desorption Using Different Metal Thin Layers 期刊论文  OAI收割 japanese journal of applied physics, JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 2010, 卷号: 49, 49, 期号: 10, 页码: art. no. 100201, Art. No. 100201 作者:  Wei TB (Wei Tongbo);  Wang JX (Wang Junxi);  Liu NX (Liu Naixin);  Lu HX (Lu Hongxi);  Zeng YP (Zeng Yiping)   |  收藏  |  浏览/下载：19/0  |  提交时间：2010/11/14 LOW-TEMPERATURE ACTIVATION  Low-temperature Activation  Films  FILMS   In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文  OAI收割 international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007 Sun, GS; Zhao, YM; Wang, L; Wang, L; Zhao, WS; Liu, XF; Ji, G; Zeng, YP 收藏  |  浏览/下载：39/0  |  提交时间：2010/03/09 in-situ doping  boron  aluminum  memory effects  hot-wall LPCVD  4H-SiC   Annealing study of carrier concentration in gradient-doped GaAs/GaAlAs epilayers grown by molecular beam epitaxy 期刊论文  OAI收割 applied optics, 2009, 卷号: 48, 期号: 9, 页码: 1715-1720 Zhang YJ; Chang BK; Yang Z; Niu J; Xiong YJ; Shi F; Guo H; Zeng YP 收藏  |  浏览/下载：65/25  |  提交时间：2010/03/08 GAAS PHOTOCATHODES  GALLIUM-ARSENIDE  ALXGA1-XAS  DIFFUSION  SURFACE  ENERGY   Dislocation core effect scattering in a quasitriangle potential well 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102 作者:  Wei HY 收藏  |  浏览/下载：236/104  |  提交时间：2010/03/08 aluminium compounds  carrier density  carrier mobility  dislocation density  dislocation scattering  gallium compounds  III-V semiconductors  semiconductor heterojunctions  wide band gap semiconductors   The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure 期刊论文  OAI收割 microelectronics journal, 2008, 卷号: 39, 期号: 5, 页码: 777-781 Guo, LC; Wang, XL; Wang, CM; Mao, HL; Ran, JX; Luo, WJ; Wang, XY; Wang, BZ; Fang, CB; Hu, GX 收藏  |  浏览/下载：93/1  |  提交时间：2010/03/08 GaN  HEMT  2DEG  mobility  polarization   The growth temperatures dependence of optical and electrical properties of InN films 期刊论文  OAI收割 science in china series g-physics mechanics & astronomy, 2008, 卷号: 51, 期号: 3, 页码: 237-242 Liu, B; Zhang, R; Xie, ZL; Xiu, XQ; Li, L; Kong, JY; Yu, HQ; Han, P; Gu, SL; Shi, Y; Zheng, YD; Tang, CG; Chen, YH; Wang, ZG 收藏  |  浏览/下载：48/2  |  提交时间：2010/03/08 metalorganic chemical vapor deposition  X-ray diffraction  photoluminescence   The correlation between preferred orientation and performance of ITO thin films 期刊论文  OAI收割 journal of materials science-materials in electronics, 2007, 卷号: 18 suppl.1, 期号: 0, 页码: s411-s414 Chen Y (Chen Yao); Zhou YQ (Zhou Yuqin); Zhang QF (Zhang Qunfang); Zhu MF (Zhu Meifang); Liu FZ (Liu Fengzhen) 收藏  |  浏览/下载：27/0  |  提交时间：2010/03/29 ELECTRICAL-PROPERTIES