机构

• 半导体研究所 [11]

采集方式

• OAI收割 [11]

内容类型

• 期刊论文 [9]
• 会议论文 [2]

发表日期

• 2009 [1]
• 2006 [3]
• 2003 [3]
• 2002 [3]
• 1998 [1]

学科主题

• 半导体材料 [11]

筛选

浏览/检索结果: 共11条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Design of Low-Loss Surface-Plasmon Quantum Cascade Lasers 期刊论文  OAI收割 japanese journal of applied physics, 2009, 卷号: 48, 期号: 12, 页码: art. no. 122101 Lu QY; Zhang W; Wang LJ; Gao Y; Yin W; Zhang QD; Liu WF; Liu FQ; Wang ZG 收藏  |  浏览/下载：53/0  |  提交时间：2010/04/04 FIELD MOBILITY MODEL  SEMICONDUCTOR-LASERS  OPTICAL-PROPERTIES  SUBMILLIMETER WAVELENGTHS  WAVE-GUIDES  AL  PB  AU  FE  NI   Growth and characterization of semi-insulating GaN films grown by MOCVD 期刊论文  OAI收割 journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 14-18 Fang CB; Wang XL; Hu GX; Wang JX; Wang CM; Li JM 收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11 MOCVD  GaN  resistivity  TSC  N-TYPE GAN  DOPED GAN  SPECTROSCOPY  CARBON  FE   Growth of high quality semi-insulating InP single crystal by suppression of compensation defects 期刊论文  OAI收割 journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 75-77 Zhao YW; Dong ZY; Duan ML; Sun WR; Yang ZX 收藏  |  浏览/下载：37/0  |  提交时间：2010/04/11 indium phosphide  defect  semi-insualting  STIMULATED CURRENT SPECTROSCOPY  CURRENT TRANSIENT SPECTROSCOPY  SEMI-INSULATING INP  DEEP-LEVEL DEFECTS  FE   Electron irradiation-induced defects in InP pre-annealed at high temperature 期刊论文  OAI收割 materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 380-383 Zhao YW (Zhao Y. W.); Dong ZY (Dong Z. Y.); Deng AH (Deng A. H.) 收藏  |  浏览/下载：42/0  |  提交时间：2010/04/11 indium phosphide  defect  irradiation  THERMALLY STIMULATED CURRENT  UNDOPED SEMIINSULATING INP  DEEP-LEVEL DEFECTS  FRENKEL PAIRS  FE  SPECTROSCOPY  PHOSPHIDE  AMBIENT  TRAPS   Annealing and activation of silicon implanted in semi-insulating InP substrates 期刊论文  OAI收割 materials science in semiconductor processing, 2003, 卷号: 6, 期号: 4, 页码: 215-218 Dong HW; Zhao YW; Li JM 收藏  |  浏览/下载：47/0  |  提交时间：2010/08/12 semi-insulating InP  ion implantation  silicon  annealing  activation  SI+-IMPLANTATION  PHOSPHIDE VAPOR  UNDOPED INP  FE  WAFERS  UNIFORMITY  PRESSURE   Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy 期刊论文  OAI收割 journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 364-369 Dong HW; Zhao YW; Zeng YP; Jiao JH; Li JM; Lin LY 收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12 diffusion  interfaces  substrates  molecular beam epitaxy  phosphides  semiconducting indium phosphide  UNDOPED SEMIINSULATING INP  CHEMICAL-VAPOR-DEPOSITION  PHOSPHIDE VAPOR  FE  INTERFACE  PHOTOLUMINESCENCE  WAFER  UNIFORMITY  DIFFUSION  PRESSURE   Undoped semi-insulating indium phosphide (InP) and its applications 期刊论文  OAI收割 chinese science bulletin, 2003, 卷号: 48, 期号: 4, 页码: 313-314 Dong HW; Zhao YW; Jiao JH; Zeng YP; Li JM; Lin LY 收藏  |  浏览/下载：53/0  |  提交时间：2010/08/12 SEMIINSULATING INP  WAFER  FE  PHOTOLUMINESCENCE  UNIFORMITY  VAPOR   (Ga,Mn,As) compounds grown on semi-insulating GaAs with mass-analyzed low energy dual ion beam depositionw 期刊论文  OAI收割 journal of crystal growth, 2002, 卷号: 234, 期号: 2-3, 页码: 359-363 Yang JL; Chen NF; Liu ZK; Yang SY; Chai CL; Liao MY; He HJ 收藏  |  浏览/下载：76/6  |  提交时间：2010/08/12 X-ray diffraction  ion beam epitaxy  gallium arsenide  FILMS  FE   Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers 会议论文  OAI收割 9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001 Zhao YW; Sun NF; Dong HW; Jiao JH; Zhao JQ; Sun TN; Lin LY 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 indium phosphide  semi-insulating  annealing  PICTS  photoluminescence  SEMIINSULATING INP  INDIUM-PHOSPHIDE  FE  PHOTOLUMINESCENCE  TEMPERATURE   Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers 期刊论文  OAI收割 materials science and engineering b-solid state materials for advanced technology, 2002, 卷号: 91, 期号: 0, 页码: 521-524 Zhao YW; Sun NF; Dong HW; Jiao JH; Zhao JQ; Sun TN; Lin LY 收藏  |  浏览/下载：82/19  |  提交时间：2010/08/12 indium phosphide  semi-insulating  annealing  PICTS  photoluminescence  SEMIINSULATING INP  INDIUM-PHOSPHIDE  FE  PHOTOLUMINESCENCE  TEMPERATURE