中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [68]
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OAI收割 [68]
内容类型
期刊论文 [51]
会议论文 [17]
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2011 [7]
2010 [6]
2009 [2]
2008 [5]
2007 [9]
2006 [13]
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学科主题
光电子学 [68]
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High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD
期刊论文
OAI收割
semiconductor science and technology, 2011, 卷号: 26, 期号: 5, 页码: article no.55013
Wu CM
;
Zhang BP
;
Shang JZ
;
Cai LE
;
Zhang JY
;
Yu JZ
;
Wang QM
收藏
  |  
浏览/下载:64/3
  |  
提交时间:2011/07/05
CHEMICAL-VAPOR-DEPOSITION
MOLECULAR-BEAM EPITAXY
PHASE EPITAXY
MIRRORS
GAN
WAVELENGTHS
Strained and strain-relaxed epitaxial Ge1-xSnx alloys on Si(100) substrates
期刊论文
OAI收割
chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: art. no. 068103
作者:
Su SJ
收藏
  |  
浏览/下载:93/5
  |  
提交时间:2011/07/07
GeSn alloys
strained
strain-relaxed
molecular beam epitaxy
Strained and strain-relaxed epitaxial Ge(1-x)Sn(x) alloys on Si(100) substrates
期刊论文
OAI收割
chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: 68103
Wang, W
;
Su, SJ
;
Zheng, J
;
Zhang, GZ
;
Zuo, YH
;
Cheng, BW
;
Wang, QM
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2012/02/06
GeSn alloys
strained
strain-relaxed
molecular beam epitaxy
Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates
期刊论文
OAI收割
journal of crystal growth, 2011, 卷号: 317, 期号: 1, 页码: 43-46
Su SJ
;
Wang W
;
Cheng BW
;
Zhang GZ
;
Hu WX
;
Xue CL
;
Zuo YH
;
Wang QM
收藏
  |  
浏览/下载:71/4
  |  
提交时间:2011/07/05
Thermal stability
Molecular beam epitaxy
Germanium tin alloys
Germanium
MOLECULAR-BEAM EPITAXY
LOW-TEMPERATURE
SEMICONDUCTORS
GE(001)2X1
The contributions of composition and strain to the phonon shift in Ge1-xSnx alloys
期刊论文
OAI收割
solid state communications, 2011, 卷号: 151, 期号: 8, 页码: 647-650
Su SJ
;
Wang W
;
Cheng BW
;
Hu WX
;
Zhang GZ
;
Xue CL
;
Zuo YH
;
Wang QM
收藏
  |  
浏览/下载:64/3
  |  
提交时间:2011/07/05
Semiconductors
Raman scattering
MOLECULAR-BEAM EPITAXY
RAMAN FREQUENCIES
SEMICONDUCTORS
GE(001)2X1
SILICON
SCATTERING
GROWTH
A practical route towards fabricating GaN nanowire arrays
期刊论文
OAI收割
crystengcomm, 2011, 卷号: 13, 期号: 19, 页码: 5929-5935
Liu, JQ
;
Huang, J
;
Gong, XJ
;
Wang, JF
;
Xu, K
;
Qiu, YX
;
Cai, DM
;
Zhou, TF
;
Ren, GQ
;
Yang, H
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2012/02/06
LIGHT-EMITTING-DIODES
EPITAXIAL LATERAL OVERGROWTH
CHEMICAL-VAPOR-DEPOSITION
WELL NANOROD ARRAYS
ULTRAVIOLET-LIGHT
GROWTH
NANOGENERATORS
DISLOCATIONS
BRIGHTNESS
LAYERS
Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy
期刊论文
OAI收割
acta physica sinica, 2011, 卷号: 60, 期号: 2, 页码: article no.28101
Su SJ
;
Wang W
;
Zhang GZ
;
Hu WX
;
Bai AQ
;
Xue CL
;
Zuo YH
;
Cheng BW
;
Wang QM
收藏
  |  
浏览/下载:55/3
  |  
提交时间:2011/07/05
GeSn
Ge
molecular beam epitaxy
epitaxial growth
SEMICONDUCTORS
GE(001)2X1
Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs
期刊论文
OAI收割
chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: art. no. 038504
Zhu B (Zhu Bin)
;
Han Q (Han Qin)
;
Yang XH (Yang Xiao-Hong)
;
Ni HQ (Ni Hai-Qiao)
;
He JF (He Ji-Fang)
;
Niu ZC (Niu Zhi-Chuan)
;
Wang X (Wang Xin)
;
Wang XP (Wang Xiu-Ping)
;
Wang J (Wang Jie)
收藏
  |  
浏览/下载:123/5
  |  
提交时间:2010/04/22
MOLECULAR-BEAM EPITAXY
BUFFER LAYERS
DARK CURRENT
PHOTODIODES
LASERS
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer
期刊论文
OAI收割
chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801
Wu YX (Wu Yu-Xin)
;
Zhu JJ (Zhu Jian-Jun)
;
Chen GF (Chen Gui-Feng)
;
Zhang SM (Zhang Shu-Ming)
;
Jiang DS (Jiang De-Sheng)
;
Liu ZS (Liu Zong-Shun)
;
Zhao DG (Zhao De-Gang)
;
Wang H (Wang Hui)
;
Wang YT (Wang Yu-Tian)
;
Yang H (Yang Hui)
收藏
  |  
浏览/下载:127/4
  |  
提交时间:2010/04/13
GaN
Si (111) substrate
metalorganic chemical vapour deposition
AlN buffer layer
AlGaN interlayer
: VAPOR-PHASE EPITAXY
CRACK-FREE GAN
STRESS-CONTROL
SI(111)
DEPOSITION
ALXGA1-XN
FILM
Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition
期刊论文
OAI收割
science china-technological sciences, 2010, 卷号: 53, 期号: 2, 页码: 313-316
Wu CM (Wu ChaoMin)
;
Shang JZ (Shang JingZhi)
;
Zhang BP (Zhang BaoPing)
;
Zhang JY (Zhang JiangYong)
;
Yu JZ (Yu JinZhong)
;
Wang QM (Wang QiMing)
收藏
  |  
浏览/下载:72/2
  |  
提交时间:2010/05/04
MOCVD
DBR
high-reflectivity
nitride
SURFACE-EMITTING LASER