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CAS IR Grid
机构
半导体研究所 [50]
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OAI收割 [50]
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期刊论文 [47]
会议论文 [3]
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2011 [5]
2010 [6]
2009 [3]
2008 [2]
2006 [4]
2005 [1]
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学科主题
半导体物理 [23]
半导体材料 [14]
光电子学 [12]
半导体化学 [1]
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Electronic band structure of a type-II 'W' quantum well calculated by an eight-band k center dot p model
期刊论文
OAI收割
chinese physics b, 2011, 卷号: 20, 期号: 3, 页码: article no.30507
Yu X
;
Gu YX
;
Wang Q
;
Wei X
;
Chen LH
收藏
  |  
浏览/下载:65/4
  |  
提交时间:2011/07/06
type-II 'W' quantum well
Burt-Foreman Hamiltonian
finite element methods
LASERS
ALLOYS
Structural and electronic properties of Si nanocrystals embedded in amorphous SiC matrix
期刊论文
OAI收割
journal of alloys and compounds, 2011, 卷号: 509, 期号: 9, 页码: 3963-3966
Song C
;
Rui YJ
;
Wang QB
;
Xu J
;
Li W
;
Chen KJ
;
Zuo YH
;
Wang QM
收藏
  |  
浏览/下载:54/6
  |  
提交时间:2011/07/05
Silicon carbide
Thin films
Crystal structure
Electronic properties
THIN-FILMS
SILICON
PHOTOLUMINESCENCE
SUPERLATTICE
ALLOYS
Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy
期刊论文
OAI收割
nanoscale research letters, 2011, 卷号: 6, 页码: article no.50
作者:
Wei HY
;
Song HP
;
Zhang B
收藏
  |  
浏览/下载:64/2
  |  
提交时间:2011/07/05
CHEMICAL-VAPOR-DEPOSITION
CORE-LEVEL PHOTOEMISSION
SB-DOPED SNO2
INN
GROWTH
GAN
NAXWO3
ALLOYS
GREEN
STATE
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations
期刊论文
OAI收割
physics letters a, PHYSICS LETTERS A, 2011, 2011, 卷号: 375, 375, 期号: 7, 页码: 1152-1155, 1152-1155
作者:
Liu CR
;
Li JB
;
Liu, CR, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. supermanliu5@semi.ac.cn
;
jbli@semi.ac.cn
  |  
收藏
  |  
浏览/下载:59/6
  |  
提交时间:2011/07/05
First principle calculation
Indium nitride
Band gap
Defect
INITIO MOLECULAR-DYNAMICS
AUGMENTED-WAVE METHOD
INDIUM NITRIDE
GAP
PSEUDOPOTENTIALS
SEMICONDUCTORS
IMPURITIES
ABSORPTION
DEFECTS
ALLOYS
First Principle Calculation
Indium Nitride
Band Gap
Defect
Initio Molecular-dynamics
Augmented-wave Method
Indium Nitride
Gap
Pseudopotentials
Semiconductors
Impurities
Absorption
Defects
Alloys
Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED
期刊论文
OAI收割
acta physica sinica, ACTA PHYSICA SINICA, 2011, 2011, 卷号: 60, 60, 期号: 1, 页码: article no.16108, Article no.16108
作者:
Wang B
;
Li ZC
;
Yao R
;
Liang M
;
Yan FW
  |  
收藏
  |  
浏览/下载:93/5
  |  
提交时间:2011/07/05
GaN-based
LED
Al composition
electron blocking layer
TEMPERATURE
ALLOYS
MOVPE
Gan-based
Led
Al Composition
Electron Blocking Layer
Temperature
Alloys
Movpe
Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers
期刊论文
OAI收割
physical review b, 2010, 卷号: 81, 期号: 12, 页码: art. no. 125314
作者:
Wang H
;
Wang H
;
Yang
;
Jiang DS
收藏
  |  
浏览/下载:121/5
  |  
提交时间:2010/04/28
GAN
ALLOYS
Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition
期刊论文
OAI收割
chinese physics b, 2010, 卷号: 19, 期号: 2, 页码: art. no. 026804
Lu GJ (Lu Guo-Jun)
;
Zhu JJ (Zhu Jian-Jun)
;
Jiang DS (Jiang De-Sheng)
;
Wang YT (Wang Yu-Tian)
;
Zhao DG (Zhao De-Gang)
;
Liu ZS (Liu Zong-Shun)
;
Zhang SM (Zhang Shu-Ming)
;
Yang H (Yang Hui)
收藏
  |  
浏览/下载:109/2
  |  
提交时间:2010/04/22
metalorganic chemical vapor deposition
Al1-xInxN
gradual variation in composition
optical reflectance spectra
X-RAY-DIFFRACTION
PHASE EPITAXY
RELAXATION
FILMS
HETEROSTRUCTURES
SEPARATION
DYNAMICS
ALLOYS
REGION
LAYERS
Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques
期刊论文
OAI收割
chinese physics b, 2010, 卷号: 19, 期号: 10, 页码: art. no. 106802
Guo X (Guo Xi)
;
Wang H (Wang Hui)
;
Jiang DS (Jiang De-Sheng)
;
Wang YT (Wang Yu-Tian)
;
Zhao DG (Zhao De-Gang)
;
Zhu JJ (Zhu Jian-Jun)
;
Liu ZS (Liu Zong-Shun)
;
Zhang SM (Zhang Shu-Ming)
;
Yang H (Yang Hui)
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2010/11/02
InGaN
In-plane grazing incidence x-ray diffraction
reciprocal space mapping
biaxial strain
CRITICAL LAYER THICKNESS
OPTICAL-PROPERTIES
LATTICE-CONSTANTS
GAN
HETEROSTRUCTURES
ALLOYS
WELLS
Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties
期刊论文
OAI收割
physica b-condensed matter, 2010, 卷号: 405, 期号: 22, 页码: 4668-4672
Wang H (Wang H.)
;
Jiang DS (Jiang D. S.)
;
Jahn U (Jahn U.)
;
Zhu JJ (Zhu J. J.)
;
Zhao DG (Zhao D. G.)
;
Liu ZS (Liu Z. S.)
;
Zhang SM (Zhang S. M.)
;
Qiu YX (Qiu Y. X.)
;
Yang H (Yang H.)
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/12/12
InGaN
Dislocation
Metalorganic chemical vapor deposition
High resolution X-ray diffraction
Cathodoluminescence
MISFIT DISLOCATIONS
QUANTUM-WELLS
BAND-GAP
EPILAYERS
GENERATION
ALLOYS
INN
Intrinsically limited critical temperatures of highly doped Ga1-xMnxAs thin films
期刊论文
OAI收割
physical review b, PHYSICAL REVIEW B, 2010, 2010, 卷号: 81, 81, 期号: 23, 页码: art. no. 235201, Art. No. 235201
作者:
Khazen K (Khazen Kh.)
;
von Bardeleben HJ (von Bardeleben H. J.)
;
Cantin JL (Cantin J. L.)
;
Mauger A (Mauger A.)
;
Chen L (Chen L.)
  |  
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2010/06/18
AMORPHOUS FERROMAGNET
Amorphous Ferromagnet
Curie-temperature
Critical-behavior
Renormalization Group
Dipolar Interactions
Critical Exponents
Magnetic Equation
Alloys
State
Semiconductors
CURIE-TEMPERATURE
CRITICAL-BEHAVIOR
RENORMALIZATION GROUP
DIPOLAR INTERACTIONS
CRITICAL EXPONENTS
MAGNETIC EQUATION
ALLOYS
STATE
SEMICONDUCTORS