中国科学院机构知识库网格系统: 检索

The timing and structure of the 8.2 ka event revealed through high-resolution speleothem records from northwestern Madagascar 期刊论文 OAI收割
QUATERNARY SCIENCE REVIEWS, 2021, 卷号: 268, 页码: 9
作者: Duan, Pengzhen; Li, Hanying; Sinha, Ashish; Voarintsoa, Ny Riavo G.; Kathayat, Gayatri

|

收藏 | 浏览/下载：32/0 | 提交时间：2021/12/07

Speleothem Madagascar The 8.2 ka event Two-stage structure

Evaluating model outputs using integrated global speleothem records of climate change since the last glacial 期刊论文 OAI收割
CLIMATE OF THE PAST, 2019, 卷号: 15, 期号: 4, 页码: 1557-1579
作者: Comas-Bru, Laia; Harrison, Sandy P.; Werner, Martin; Rehfeld, Kira; Scroxton, Nick

|

收藏 | 浏览/下载：87/0 | 提交时间：2019/10/14

Evaluating model outputs using integrated global speleothem records of climate change since the last glacial 期刊论文 OAI收割
CLIMATE OF THE PAST, 2019, 卷号: 15, 期号: 4, 页码: 1557-1579
作者: Comas-Bru, Laia; Harrison, Sandy P.; Werner, Martin; Rehfeld, Kira; Scroxton, Nick

|

收藏 | 浏览/下载：25/0 | 提交时间：2020/06/05

Impact of Ge Preamorphization Implantation on Both the Formation of Ultrathin TiSix and the Specific Contact Resistivity in TiSix/n-Si Contacts 期刊论文 OAI收割
IEEE Transactions on Electron Devices, 2018
作者: Ye TC(叶甜春); Mao SJ(毛淑娟); Wang GL(王桂磊); Xu J(许静); Luo X(罗雪)

|

收藏 | 浏览/下载：36/0 | 提交时间：2019/05/05

On the manifestation ofGe Pre-amorphization Implantation (PAI) in forming ultrathin TiSix for Ti direct contact on Si in sub-16/14 nm Complementary Metal-Oxide-Semiconductor (CMOS) technology nodes 期刊论文 OAI收割
ECS Journal of Solid State Science and Technology, 2017
作者: Wang GL(王桂磊); Li JF(李俊峰); Zhao C(赵超); Ye TC(叶甜春); Chen DP(陈大鹏)

|

收藏 | 浏览/下载：42/0 | 提交时间：2018/06/08

Reduction of NiGe/n-and p-Ge Specific Contact Resistivity by Enhanced Dopant Segregation in the Presence of Carbon During Nickel Germanidation 期刊论文 OAI收割
IEEE Transactions on Electron Devices, 2016
作者: Duan NY(段宁远); Wang GL(王桂磊); Liu JB(刘金彪); Eddy simoen; Mao SJ(毛淑娟)

|

收藏 | 浏览/下载：15/0 | 提交时间：2017/05/09

On the Manipulation of Phosphorus Diffusion as Well as the Reduction of Specific Contact Resistivity in Ge by Carbon Co-Doping 期刊论文 OAI收割
ECS Transactions, 2016
作者: Luo J(罗军); Liu JB(刘金彪); Eddy Simoen; Wang GL(王桂磊); Mao SJ(毛淑娟)

|

收藏 | 浏览/下载：27/0 | 提交时间：2017/05/09

Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14 nm nodes FinFET technology 期刊论文 OAI收割
MICROELECTRONIC ENGINEERING, 2016, 卷号: 163, 页码: 49-54
作者: Wang, GL; Qin, CL; Yin, HX; Luo, J; Duan, NY

收藏 | 浏览/下载：47/0 | 提交时间：2017/03/02

FinFET SiGe selective epitaxy RPCVD High-k & metal gate

Effects of carbon pre-germanidation implantation on the thermal stability of NiGe and dopant segregation on both n- and p-type Ge substrate 期刊论文 OAI收割
ECS Journal of Solid State Science and Technology, 2015
作者: Zhao C(赵超); Liu QB(刘庆波); Wang GL(王桂磊); Duan NY(段宁远); Liu HW(刘宏伟)

|

收藏 | 浏览/下载：16/0 | 提交时间：2016/05/31

Amplitude analysis of the pi(0)pi(0) system produced in radiative J/psi decays 期刊论文 OAI收割
PHYSICAL REVIEW D, 2015, 卷号: 92, 期号: 5
Ablikim, M; Achasov, MN; Ai, XC; Albayrak, O; Albrecht, M; Ambrose, DJ; Amoroso, A; An, FF; An, Q; Bai, JZ; Ferroli, RB; Ban, Y; Bennett, DW; Bennett, JV; Bertani, M; Bettoni, D; Bian, JM; Bianchi, F; Boger, E; Bondarenko, O; Boyko, I; Briere, RA; Cai, H; Cai, X; Cakir, O; Calcaterra, A; Cao, GF; Cetin, SA; Chang, JF; Chelkov, G; Chen, G; Chen, HS; Chen, HY; Chen, JC; Chen, ML; Chen, SJ; Chen, X; Chen, XR; Chen, YB; Cheng, HP; Chu, XK; Cibinetto, G; Cronin-Hennessy, D; Dai, HL; Dai, JP; Dbeyssi, A; Dedovich, D; Deng, ZY; Denig, A; Denysenko, I; Destefanis, M; De Mori, F; Ding, Y; Dong, C; Dong, J; Dong, LY; Dong, MY; Du, SX; Duan, PF; Eren, EE; Fan, JZ; Fang, J; Fang, SS; Fang, X; Fang, Y; Fava, L; Feldbauer, F; Felici, G; Feng, CQ; Fioravanti, E; Fritsch, M; Fu, CD; Gao, Q; Gao, XY; Gao, Y; Gao, Z; Garzia, I; Geng, C; Goetzen, K; Gong, WX; Gradl, W; Greco, M; Gu, MH; Gu, YT; Guan, YH; Guo, AQ; Guo, LB; Guo, Y; Guo, YP; Haddadi, Z; Hafner, A; Han, S; Han, YL; Hao, XQ; Harris, FA; He, KL; He, ZY; Held, T; Heng, YK; Hou, ZL; Hu, C; Hu, HM; Hu, JF; Hu, T; Hu, Y; Huang, GM; Huang, GS; Huang, HP; Huang, JS; Huang, XT; Huang, Y; Hussain, T; Ji, Q; Ji, QP; Ji, XB; Ji, XL; Jiang, LL; Jiang, LW; Jiang, XS; Jiang, XY; Jiao, JB; Jiao, Z; Jin, DP; Jin, S; Johansson, T; Julin, A; Kalantar-Nayestanaki, N; Kang, XL; Kang, XS; Kavatsyuk, M; Ke, BC; Kiese, P; Kliemt, R; Kloss, B; Kolcu, OB; Kopf, B; Kornicer, M; Kuhn, W; Kupsc, A; Lange, JS; Lara, M; Larin, P; Leng, C; Li, C; Li, CH; Li, C; Li, DM; Li, F; Li, G; Li, HB; Li, JC; Li, J; Li, K; Li, K; Li, L; Li, PR; Li, T; Li, WD; Li, WG; Li, XL; Li, XM; Li, XN; Li, XQ; Li, ZB; Liang, H; Liang, YF; Liang, YT; Liao, GR; Lin, DX; Liu, BJ; Liu, CX; Liu, FH; Liu, F; Liu, F; Liu, HB; Liu, HH; Liu, HH; Liu, HM; Liu, J; Liu, JB; Liu, JP; Liu, JY; Liu, K; Liu, KY; Liu, LD; Liu, PL; Liu, Q; Liu, SB; Liu, X; Liu, XX; Liu, YB; Liu, ZA; Liu, ZQ; Liu, ZQ; Loehner, H; Lou, XC; Lu, HJ; Lu, JG; Lu, RQ; Lu, Y; Lu, YP; Luo, CL; Luo, MX; Luo, T; Luo, XL; Lv, M; Lyu, XR; Ma, FC; Ma, HL; Ma, LL; Ma, QM; Ma, T; Ma, XN; Ma, XY; Maas, FE; Maggiora, M; Malik, QA; Mao, YJ; Mao, ZP; Marcello, S; Messchendorp, JG; Min, J; Min, TJ; Mitchell, RE; Mo, XH; Mo, YJ; Morales, CM; Moriya, K; Muchnoi, NY; Muramatsu, H; Nefedov, Y; Nerling, F; Nikolaev, IB; Ning, Z; Nisar, S; Niu, SL; Niu, XY; Olsen, SL; Ouyang, Q; Pacetti, S; Patteri, P; Pelizaeus, M; Peng, HP; Peters, K; Pettersson, J; Ping, JL; Ping, RG; Poling, R; Prasad, V; Pu, YN; Qi, M; Qian, S; Qiao, CF; Qin, LQ; Qin, N; Qin, XS; Qin, Y; Qin, ZH; Qiu, JF; Rashid, KH; Redmer, CF; Ren, HL; Ripka, M; Rong, G; Rosner, C; Ruan, XD; Santoro, V; Sarantsev, A; Savrie, M; Schoenning, K; Schumann, S; Shan, W; Shao, M; Shen, CP; Shen, PX; Shen, XY; Sheng, HY; Shepherd, MR; Song, WM; Song, XY; Sosio, S; Spataro, S; Sun, GX; Sun, JF; Sun, SS; Sun, YJ; Sun, YZ; Sun, ZJ; Sun, ZT; Tang, CJ; Tang, X; Tapan, I; Thorndike, EH; Tiemens, M; Toth, D; Ullrich, M; Uman, I; Varner, GS; Wang, B; Wang, BL; Wang, D; Wang, DY; Wang, K; Wang, LL; Wang, LS; Wang, M; Wang, P; Wang, PL; Wang, SG; Wang, W; Wang, XF; Wang, YD; Wang, YF; Wang, YQ; Wang, Z; Wang, ZG; Wang, ZH; Wang, ZY; Weber, T; Wei, DH; Wei, JB; Weidenkaff, P; Wen, SP; Wiedner, U; Wolke, M; Wu, LH; Wu, Z; Xia, LG; Xia, Y; Xiao, D; Xiao, ZJ; Xie, YG; Xiu, QL; Xu, GF; Xu, L; Xu, QJ; Xu, QN; Xu, XP; Yan, L; Yan, WB; Yan, WC; Yan, YH; Yang, HX; Yang, L; Yang, Y; Yang, YX; Ye, H; Ye, M; Ye, MH; Yin, JH; Yu, BX; Yu, CX; Yu, HW; Yu, JS; Yuan, CZ; Yuan, WL; Yuan, Y; Yuncu, A; Zafar, AA; Zallo, A; Zeng, Y; Zhang, BX; Zhang, BY; Zhang, C; Zhang, CC; Zhang, DH; Zhang, HH; Zhang, HY; Zhang, JJ; Zhang, JL; Zhang, JQ; Zhang, JW; Zhang, JY; Zhang, JZ; Zhang, K; Zhang, L; Zhang, SH; Zhang, XY; Zhang, Y; Zhang, YN; Zhang, YH; Zhang, YT; Zhang, Y; Zhang, ZH; Zhang, ZP; Zhang, ZY; Zhao, G; Zhao, JW; Zhao, JY; Zhao, JZ; Zhao, L; Zhao, L; Zhao, MG; Zhao, Q; Zhao, QW; Zhao, SJ; Zhao, TC; Zhao, YB; Zhao, ZG; Zhemchugov, A; Zheng, B; Zheng, JP; Zheng, WJ; Zheng, YH; Zhong, B; Zhou, L; Zhou, L; Zhou, X; Zhou, XK; Zhou, XR; Zhou, XY; Zhu, K; Zhu, KJ; Zhu, S; Zhu, XL; Zhu, YC; Zhu, YS; Zhu, ZA; Zhuang, J; Zotti, L; Zou, BS; Zou, JH; Szczepaniak, AP; Guo, P

收藏 | 浏览/下载：356/0 | 提交时间：2016/12/26