机构

• 半导体研究所 [10]

采集方式

• OAI收割 [8]
• iSwitch采集 [2]

内容类型

• 期刊论文 [8]
• 会议论文 [2]

发表日期

• 2006 [3]
• 2005 [1]
• 2004 [1]
• 2000 [5]

学科主题

• 半导体材料 [5]
• 半导体物理 [2]
• 光电子学 [1]

筛选

浏览/检索结果: 共10条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Deep level transient spectroscopy studies of Er and Pr implanted GaN films 期刊论文  OAI收割 acta physica sinica, 2006, 卷号: 55, 期号: 3, 页码: 1407-1412 Song SF; Chen WD; Xu ZJ; Xu XR 收藏  |   Growth of high quality semi-insulating InP single crystal by suppression of compensation defects 期刊论文  OAI收割 journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 75-77 Zhao YW; Dong ZY; Duan ML; Sun WR; Yang ZX 收藏  |   Electron irradiation-induced defects in InP pre-annealed at high temperature 期刊论文  OAI收割 materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 380-383 Zhao YW (Zhao Y. W.); Dong ZY (Dong Z. Y.); Deng AH (Deng A. H.) 收藏  |   Improvement of the electrical property of semi-insulating InP by suppression of compensation defects 会议论文  OAI收割 17th international conference on indium phosphide and related materials, glasgow, scotland, may 08-12, 2005 Zhao, YW; Dong, ZY 收藏  |   Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration 会议论文  OAI收割 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 Zhao, YW; Dong, ZY; Zhang, YH; Li, CJ 收藏  |   The improvement characteristics of homoepitaxial gaas grown by atomic hydrogen-assisted molecular beam epitaxy 期刊论文  iSwitch采集 Journal of infrared and millimeter waves, 2000, 卷号: 19, 期号: 3, 页码: 191-193 作者:  Wang, HL;  Zhu, HJ;  Ning, D;  Wang, H;  Wang, XD 收藏  |   Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy 期刊论文  OAI收割 journal of crystal growth, 2000, 卷号: 217, 期号: 3, 页码: 228-232 Xu HZ; Wang ZG; Harrison I; Bell A; Ansell BJ; Winser AJ; Cheng TS; Foxon CT; Kawabe M 收藏  |   Point defects in III-V compound semiconductors 期刊论文  OAI收割 defects and diffusion in semiconductors, 2000, 卷号: 183-1, 期号: 0, 页码: 85-93 Chen N 收藏  |   Point defects in iii-v compound semiconductors 期刊论文  iSwitch采集 Defects and diffusion in semiconductors, 2000, 卷号: 183-1, 页码: 85-93 作者:  Chen, N 收藏  |   The improvement characteristics of homoepitaxial GaAs grown by atomic hydrogen-assisted molecular beam epitaxy 期刊论文  OAI收割 journal of infrared and millimeter waves, 2000, 卷号: 19, 期号: 3, 页码: 191-193 Wang HL; Zhu HJ; Ning D; Wang H; Wang XD; Guo ZS; Feng SL 收藏  |