机构

• 半导体研究所 [10]

采集方式

• OAI收割 [8]
• iSwitch采集 [2]

内容类型

• 期刊论文 [8]
• 会议论文 [2]

发表日期

• 2006 [3]
• 2005 [1]
• 2004 [1]
• 2000 [5]

学科主题

• 半导体材料 [5]
• 半导体物理 [2]
• 光电子学 [1]

筛选

浏览/检索结果: 共10条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Deep level transient spectroscopy studies of Er and Pr implanted GaN films 期刊论文  OAI收割 acta physica sinica, 2006, 卷号: 55, 期号: 3, 页码: 1407-1412 Song SF; Chen WD; Xu ZJ; Xu XR 收藏  |  浏览/下载：50/0  |  提交时间：2010/04/11 GaN  Er  Pr-implautation  deep level transient spectroscopy  N-TYPE GAN  DEFECTS  EPITAXY  TRAPS   Growth of high quality semi-insulating InP single crystal by suppression of compensation defects 期刊论文  OAI收割 journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 75-77 Zhao YW; Dong ZY; Duan ML; Sun WR; Yang ZX 收藏  |  浏览/下载：47/0  |  提交时间：2010/04/11 indium phosphide  defect  semi-insualting  STIMULATED CURRENT SPECTROSCOPY  CURRENT TRANSIENT SPECTROSCOPY  SEMI-INSULATING INP  DEEP-LEVEL DEFECTS  FE   Electron irradiation-induced defects in InP pre-annealed at high temperature 期刊论文  OAI收割 materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 380-383 Zhao YW (Zhao Y. W.); Dong ZY (Dong Z. Y.); Deng AH (Deng A. H.) 收藏  |  浏览/下载：53/0  |  提交时间：2010/04/11 indium phosphide  defect  irradiation  THERMALLY STIMULATED CURRENT  UNDOPED SEMIINSULATING INP  DEEP-LEVEL DEFECTS  FRENKEL PAIRS  FE  SPECTROSCOPY  PHOSPHIDE  AMBIENT  TRAPS   Improvement of the electrical property of semi-insulating InP by suppression of compensation defects 会议论文  OAI收割 17th international conference on indium phosphide and related materials, glasgow, scotland, may 08-12, 2005 Zhao, YW; Dong, ZY 收藏  |  浏览/下载：235/68  |  提交时间：2010/03/29 ENCAPSULATED CZOCHRALSKI INP  SEMICONDUCTOR COMPOUND-CRYSTALS  STIMULATED CURRENT SPECTROSCOPY  CURRENT TRANSIENT SPECTROSCOPY  DEEP-LEVEL DEFECTS  ANNEALING AMBIENT  POINT-DEFECTS  FE  PHOSPHIDE  DONORS   Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration 会议论文  OAI收割 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 Zhao, YW; Dong, ZY; Zhang, YH; Li, CJ 收藏  |  浏览/下载：182/52  |  提交时间：2010/03/29 DEEP-LEVEL DEFECTS  FE-DOPED INP  GROWN INP  SPECTROSCOPY  RESONANCE  WAFER   The improvement characteristics of homoepitaxial gaas grown by atomic hydrogen-assisted molecular beam epitaxy 期刊论文  iSwitch采集 Journal of infrared and millimeter waves, 2000, 卷号: 19, 期号: 3, 页码: 191-193 作者:  Wang, HL;  Zhu, HJ;  Ning, D;  Wang, H;  Wang, XD 收藏  |  浏览/下载：35/0  |  提交时间：2019/05/12 Atomic hydrogen-assisted molecular beam epitaxy  Deep level transient spectroscopy  Deep level defects   Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy 期刊论文  OAI收割 journal of crystal growth, 2000, 卷号: 217, 期号: 3, 页码: 228-232 Xu HZ; Wang ZG; Harrison I; Bell A; Ansell BJ; Winser AJ; Cheng TS; Foxon CT; Kawabe M 收藏  |  浏览/下载：56/0  |  提交时间：2010/08/12 GaN  photoluminescence  optical quenching of photoconductivity  native defect level  molecular beam epitaxy  N-TYPE GAN  DEEP-LEVEL DEFECTS  YELLOW LUMINESCENCE  MAGNETIC-RESONANCE  THIN-FILMS   Point defects in III-V compound semiconductors 期刊论文  OAI收割 defects and diffusion in semiconductors, 2000, 卷号: 183-1, 期号: 0, 页码: 85-93 Chen N 收藏  |  浏览/下载：53/0  |  提交时间：2010/08/12 compound semiconductors  point defects  deep level centres  stoichiometry  MOLECULAR-BEAM EPITAXY  GAAS SINGLE-CRYSTALS  SEMIINSULATING GALLIUM-ARSENIDE  SEMI-INSULATING GAAS  ELECTRICAL-PROPERTIES  LATTICE-PARAMETER  NATIVE DEFECTS  CARBON  DIFFRACTOMETER  STOICHIOMETRY   Point defects in iii-v compound semiconductors 期刊论文  iSwitch采集 Defects and diffusion in semiconductors, 2000, 卷号: 183-1, 页码: 85-93 作者:  Chen, N 收藏  |  浏览/下载：21/0  |  提交时间：2019/05/12 Compound semiconductors  Point defects  Deep level centres  Stoichiometry   The improvement characteristics of homoepitaxial GaAs grown by atomic hydrogen-assisted molecular beam epitaxy 期刊论文  OAI收割 journal of infrared and millimeter waves, 2000, 卷号: 19, 期号: 3, 页码: 191-193 Wang HL; Zhu HJ; Ning D; Wang H; Wang XD; Guo ZS; Feng SL 收藏  |  浏览/下载：92/0  |  提交时间：2010/08/12 atomic hydrogen-assisted molecular beam epitaxy  deep level transient spectroscopy  deep level defects  DISLOCATION DENSITY  IRRADIATION