机构

• 半导体研究所 [9]
• 金属研究所 [2]

采集方式

• OAI收割 [10]
• iSwitch采集 [1]

内容类型

• 期刊论文 [7]
• 会议论文 [4]

发表日期

• 2007 [1]
• 2006 [1]
• 2003 [3]
• 2002 [3]
• 1998 [3]

学科主题

• 半导体材料 [4]
• 光电子学 [3]
• 半导体物理 [1]

筛选

浏览/检索结果: 共11条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Influence of deep level defects on electrical compensation in semi-insulating inp materials 期刊论文  iSwitch采集 Acta physica sinica, 2007, 卷号: 56, 期号: 2, 页码: 1167-1171 作者:  Yang Jun;  Zhao You-Wen;  Dong Zhi-Yuan;  Deng Ai-Hong;  Miao Shan-Shan 收藏  |  浏览/下载：23/0  |  提交时间：2019/05/12 Inp  Semi-insulating  Deep level  Electric compensation   Growth of high quality semi-insulating InP single crystal by suppression of compensation defects 期刊论文  OAI收割 journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 75-77 Zhao YW; Dong ZY; Duan ML; Sun WR; Yang ZX 收藏  |  浏览/下载：47/0  |  提交时间：2010/04/11 indium phosphide  defect  semi-insualting  STIMULATED CURRENT SPECTROSCOPY  CURRENT TRANSIENT SPECTROSCOPY  SEMI-INSULATING INP  DEEP-LEVEL DEFECTS  FE   Annealing and activation of silicon implanted in semi-insulating InP substrates 期刊论文  OAI收割 MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2003, 卷号: 6, 期号: 4, 页码: 215-218 作者:  Dong, HW;  Zhao, YW;  Li, JM   |  收藏  |  浏览/下载：17/0  |  提交时间：2021/02/02 semi-insulating InP  ion implantation  silicon  annealing  activation   Annealing and activation of silicon implanted in semi-insulating InP substrates 期刊论文  OAI收割 MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2003, 卷号: 6, 期号: 4, 页码: 215-218 作者:  Dong, HW;  Zhao, YW;  Li, JM   |  收藏  |  浏览/下载：12/0  |  提交时间：2021/02/02 semi-insulating InP  ion implantation  silicon  annealing  activation   Annealing and activation of silicon implanted in semi-insulating InP substrates 期刊论文  OAI收割 materials science in semiconductor processing, 2003, 卷号: 6, 期号: 4, 页码: 215-218 Dong HW; Zhao YW; Li JM 收藏  |  浏览/下载：67/0  |  提交时间：2010/08/12 semi-insulating InP  ion implantation  silicon  annealing  activation  SI+-IMPLANTATION  PHOSPHIDE VAPOR  UNDOPED INP  FE  WAFERS  UNIFORMITY  PRESSURE   Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers 会议论文  OAI收割 9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001 Zhao YW; Sun NF; Dong HW; Jiao JH; Zhao JQ; Sun TN; Lin LY 收藏  |  浏览/下载：32/0  |  提交时间：2010/11/15 indium phosphide  semi-insulating  annealing  PICTS  photoluminescence  SEMIINSULATING INP  INDIUM-PHOSPHIDE  FE  PHOTOLUMINESCENCE  TEMPERATURE   Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers 期刊论文  OAI收割 materials science and engineering b-solid state materials for advanced technology, 2002, 卷号: 91, 期号: 0, 页码: 521-524 Zhao YW; Sun NF; Dong HW; Jiao JH; Zhao JQ; Sun TN; Lin LY 收藏  |  浏览/下载：88/19  |  提交时间：2010/08/12 indium phosphide  semi-insulating  annealing  PICTS  photoluminescence  SEMIINSULATING INP  INDIUM-PHOSPHIDE  FE  PHOTOLUMINESCENCE  TEMPERATURE   Fe-diffusion-induced defects in InP annealed in iron phosphide ambient 期刊论文  OAI收割 japanese journal of applied physics part 1-regular papers short notes & review papers, 2002, 卷号: 41, 期号: 4a, 页码: 1929-1931 Zhao YW; Dong HW; Jiao JH; Zhao JQ; Lin LY 收藏  |  浏览/下载：100/7  |  提交时间：2010/08/12 indium phosphide  annealing  semi-insulating  defect  diffusion  ENCAPSULATED CZOCHRALSKI INP  SEMIINSULATING INP  PHOTO-LUMINESCENCE  INDIUM-PHOSPHIDE  UNDOPED INP  PHOTOLUMINESCENCE  CRYSTALS  PRESSURE   Dynamics of formation of defects in annealed InP 会议论文  OAI收割 conference on integrated optoelectronics ii, beijing, peoples r china, sep 18-19, 1998 Han YJ; Liu XL; Jiao JH; Lin LY 收藏  |  浏览/下载：15/0  |  提交时间：2010/10/29 defects formation  hydrogen related defects  semi-insulating  InP   On the nature of iron in InP: A FTIR study 会议论文  OAI收割 conference on integrated optoelectronics ii, beijing, peoples r china, sep 18-19, 1998 Han YJ; Liu XL; Lao JH; Lin LY 收藏  |  浏览/下载：26/0  |  提交时间：2010/10/29 iron  phonon sideband  semi-insulating  InP