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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [14]
采集方式
OAI收割 [14]
内容类型
期刊论文 [14]
发表日期
2011 [14]
学科主题
半导体物理 [14]
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浏览/检索结果:
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发表日期:2011
学科主题:半导体物理
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Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition
期刊论文
OAI收割
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: article no.245402
Fu D
;
Zhang R
;
Liu B
;
Xie ZL
;
Xiu XQ
;
Gu SL
;
Lu H
;
Zheng YD
;
Chen YH
;
Wang ZG
收藏
  |  
浏览/下载:32/2
  |  
提交时间:2011/07/05
FUNDAMENTAL-BAND GAP
INDIUM NITRIDE
BUFFER LAYER
DEPENDENCE
SAPPHIRE
MOCVD
Hole mediated magnetism in Mn-doped GaN nanowires
期刊论文
OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2011, 2011, 卷号: 109, 109, 期号: 7, 页码: article no.74313, Article no.74313
作者:
Zhang XW
;
Li JB
;
Chang K
;
Li SS
;
Xia JB
  |  
收藏
  |  
浏览/下载:61/4
  |  
提交时间:2011/07/05
MOLECULAR-BEAM EPITAXY
ROOM-TEMPERATURE
QUANTUM WIRES
SEMICONDUCTORS
FERROMAGNETISM
FIELD
GAMNN
Molecular-beam Epitaxy
Room-temperature
Quantum Wires
Semiconductors
Ferromagnetism
Field
Gamnn
Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy
期刊论文
OAI收割
journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 4, 页码: 43004, 43004
作者:
He, Jifang
;
Shang, Xiangjun
;
Li, Mifeng
;
Zhu, Yan
;
Chang, Xiuying
  |  
收藏
  |  
浏览/下载:73/0
  |  
提交时间:2012/06/14
Atomic force microscopy
Buffer layers
Epitaxial growth
Gallium alloys
Gallium arsenide
Germanium
Growth temperature
High resolution transmission electron microscopy
Molecular beam epitaxy
Molecular beams
Semiconducting gallium
Semiconductor device structures
Semiconductor quantum wells
Atomic Force Microscopy
Buffer Layers
Epitaxial Growth
Gallium Alloys
Gallium Arsenide
Germanium
Growth Temperature
High Resolution Transmission Electron Microscopy
Molecular Beam Epitaxy
Molecular Beams
Semiconducting Gallium
Semiconductor Device Structures
Semiconductor Quantum Wells
Fabrication of(Ga,Mn)As magnetic semiconductor quantum dots on Si substrates by droplet epitaxy
期刊论文
OAI收割
physica status solidi(c) current topics in solid state physics, Physica Status Solidi(C) Current Topics in Solid State Physics, 2011, 2011, 卷号: 8, 8, 期号: 2, 页码: 393-395, 393-395
作者:
Wang, S.L.
;
Meng, K.K.
;
Chen, L.
;
Xu, P.F.
;
Meng, H.J.
  |  
收藏
  |  
浏览/下载:68/0
  |  
提交时间:2012/06/14
Drop formation
Epitaxial growth
Ferromagnetic materials
Ferromagnetism
Gallium alloys
High resolution transmission electron microscopy
Magnetic semiconductors
Manganese
Semiconducting silicon
Semiconductor growth
Semiconductor quantum dots
Drop Formation
Epitaxial Growth
Ferromagnetic Materials
Ferromagnetism
Gallium Alloys
High Resolution Transmission Electron Microscopy
Magnetic Semiconductors
Manganese
Semiconducting Silicon
Semiconductor Growth
Semiconductor Quantum Dots
2-5m InAs/GaSb superlattices infrared photodetector
期刊论文
OAI收割
hongwai yu jiguang gongcheng/infrared and laser engineering, Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2011, 2011, 卷号: 40, 40, 期号: 8, 页码: 1403-1406, 1403-1406
作者:
Xu, Yingqiang
;
Tang, Bao
;
Wang, Guowei
;
Ren, Zhengwei
;
Niu, Zhichuan
  |  
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2012/06/14
Alignment
Atomic force microscopy
Atomic spectroscopy
Detectors
Epitaxial growth
Gallium alloys
Gallium arsenide
Indium arsenide
Infrared detectors
Molecular beam epitaxy
Molecular beams
Optoelectronic devices
Semiconducting gallium
Superlattices
Transmission electron microscopy
X ray diffraction
Alignment
Atomic Force Microscopy
Atomic Spectroscopy
Detectors
Epitaxial Growth
Gallium Alloys
Gallium Arsenide
Indium Arsenide
Infrared Detectors
Molecular Beam Epitaxy
Molecular Beams
Optoelectronic Devices
Semiconducting Gallium
Superlattices
Transmission Electron Microscopy
x Ray Diffraction
Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy
期刊论文
OAI收割
optoelectronics letters, Optoelectronics Letters, 2011, 2011, 卷号: 7, 7, 期号: 5, 页码: 325-329, 325-329
作者:
Zhu, Yan
;
Ni, Hai-qiao
;
Wang, Hai-li
;
He, Ji-fang
;
Li, Mi-feng
  |  
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2012/06/14
Epitaxial growth
Gallium arsenide
Growth(materials)
Molecular beam epitaxy
Semiconducting gallium
Semiconducting indium
Semiconductor quantum wells
Epitaxial Growth
Gallium Arsenide
Growth(Materials)
Molecular Beam Epitaxy
Semiconducting Gallium
Semiconducting Indium
Semiconductor Quantum Wells
Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)
期刊论文
OAI收割
nanoscale research letters, NANOSCALE RESEARCH LETTERS, 2011, 2011, 卷号: 6, 6, 页码: article no.125, Article no.125
作者:
Xu PF
;
Lu J
;
Chen L
;
Yan SA
;
Meng HJ
  |  
收藏
  |  
浏览/下载:36/1
  |  
提交时间:2011/07/05
MAGNETIC-PROPERTIES
GAAS(001)
FILMS
ORDER
NANOCLUSTERS
EPITAXY
Magnetic-properties
Gaas(001)
Films
Order
Nanoclusters
Epitaxy
Ferromagnetic nature of (Ga, Cr)As epilayers revealed by magnetic circular dichroism
期刊论文
OAI收割
solid state communications, SOLID STATE COMMUNICATIONS, 2011, 2011, 卷号: 151, 151, 期号: 6, 页码: 456-459, 456-459
作者:
Wu H
;
Gan HD
;
Zheng HZ
;
Lu J
;
Zhu H
  |  
收藏
  |  
浏览/下载:62/5
  |  
提交时间:2011/07/05
Magnetic semiconductors
Molecular beam epitaxy
Magneto-optical effects
TRANSPORT-PROPERTIES
SEMICONDUCTOR
(GA,CR)AS
Magnetic Semiconductors
Molecular Beam Epitaxy
Magneto-optical Effects
Transport-properties
Semiconductor
(Ga
Cr)As
Fabrication of ferromagnetic GaMnSb by thermal diffusion of evaporated Mn
期刊论文
OAI收割
journal of crystal growth, JOURNAL OF CRYSTAL GROWTH, 2011, 2011, 卷号: 316, 316, 期号: 1, 页码: 145-148, 145-148
作者:
Yang GD
;
Zhu F
;
Dong S
;
Yang, GD, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. guandongyang@gmail.com
  |  
收藏
  |  
浏览/下载:64/2
  |  
提交时间:2011/07/05
Diffusion
Physical vapor deposition processes
Magnetic materials
Semiconducting III-V materials
GASB/MN DIGITAL ALLOYS
ROOM-TEMPERATURE FERROMAGNETISM
RAMAN-SCATTERING
MAGNETOTRANSPORT PROPERTIES
EPITAXIAL LAYERS
THIN-FILMS
SEMICONDUCTORS
STRAIN
MAGNETOELECTRONICS
SPINTRONICS
Diffusion
Physical Vapor Deposition Processes
Magnetic Materials
Semiconducting Iii-v Materials
Gasb/mn Digital Alloys
Room-temperature Ferromagnetism
Raman-scattering
Magnetotransport Properties
Epitaxial Layers
Thin-films
Semiconductors
Strain
Magnetoelectronics
Spintronics
Molecular beam epitaxy growth of GaAs on an offcut Ge substrate
期刊论文
OAI收割
chinese physics b, CHINESE PHYSICS B, 2011, 2011, 卷号: 20, 20, 期号: 1, 页码: article no.18102, Article no.18102
作者:
He JF
;
Niu ZC
;
Chang XY
;
Ni HQ
;
Zhu Y
  |  
收藏
  |  
浏览/下载:105/7
  |  
提交时间:2011/07/05
molecular beam epitaxy
anti-phase domain
GaAs/Ge interface
CHEMICAL VAPOR-DEPOSITION
JUNCTION SOLAR-CELLS
DOMAIN-FREE GROWTH
TEMPERATURE
QUALITY
FUTURE
Molecular Beam Epitaxy
Anti-phase Domain
Gaas/ge Interface
Chemical Vapor-deposition
Junction Solar-cells
Domain-free Growth
Temperature
Quality
Future