机构

• 半导体研究所 [15]

采集方式

• OAI收割 [15]

内容类型

• 期刊论文 [11]
• 会议论文 [4]

发表日期

• 2011 [1]
• 2007 [1]
• 2006 [3]
• 2005 [1]
• 2003 [3]
• 2002 [2]
• 更多

学科主题

• 半导体材料 [15]

筛选

浏览/检索结果: 共15条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文  OAI收割 semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016 Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW 收藏  |  浏览/下载：52/10  |  提交时间：2011/07/05 UNDOPED GALLIUM ANTIMONIDE  SELF-DIFFUSION  NATIVE DEFECTS  N-TYPE  CRYSTALS  CATHODOLUMINESCENCE  PHOTOLUMINESCENCE  SEMICONDUCTORS  SPECTROSCOPY  LUMINESCENCE   Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer 期刊论文  OAI收割 journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 800-803 Fang CB (Fang Cebao); Wang XL (Wang Xiaoliang); Xiao HL (Xiao Hongling); Hu GX (Hu Guoxin); Wang CM (Wang Cuimei); Wang XY (Wang Xiaoyan); Li JP (Li Jianping); Wang JX (Wang Junxi); Li CJ (Li Chengji); Zeng YP (Zeng Yiping); Li JM (Li Jinmin); Wang ZG (Wang Zanguo) 收藏  |  浏览/下载：34/0  |  提交时间：2010/03/29 deep defect   Characteristic of rapid thermal annealing on GaIn(N)(Sb)As/GaAs quantum well grown by molecular-beam epitaxy 期刊论文  OAI收割 journal of applied physics, 2006, 卷号: 99, 期号: 3, 页码: art.no.034903 作者:  Xu YQ 收藏  |  浏览/下载：121/0  |  提交时间：2010/04/11 IMPROVED LUMINESCENCE EFFICIENCY  OPTICAL-PROPERTIES  LASERS  NITROGEN  ORIGIN   Electron irradiation-induced defects in InP pre-annealed at high temperature 会议论文  OAI收割 11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005 Zhao, YW (Zhao, Y. W.); Dong, ZY (Dong, Z. Y.); Deng, AH (Deng, A. H.) 收藏  |  浏览/下载：158/28  |  提交时间：2010/03/29 indium phosphide   Electron irradiation-induced defects in InP pre-annealed at high temperature 期刊论文  OAI收割 materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 380-383 Zhao YW (Zhao Y. W.); Dong ZY (Dong Z. Y.); Deng AH (Deng A. H.) 收藏  |  浏览/下载：42/0  |  提交时间：2010/04/11 indium phosphide  defect  irradiation  THERMALLY STIMULATED CURRENT  UNDOPED SEMIINSULATING INP  DEEP-LEVEL DEFECTS  FRENKEL PAIRS  FE  SPECTROSCOPY  PHOSPHIDE  AMBIENT  TRAPS   Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness 期刊论文  OAI收割 journal of crystal growth, 2005, 卷号: 286, 期号: 1, 页码: 23-27 作者:  Jin P;  Xu B 收藏  |  浏览/下载：58/0  |  提交时间：2010/04/11 defects  lateral composition modulation  photoluminescence  molecular beam epitaxy  quantum wires  semiconductor III-V material  DOTS  HETEROSTRUCTURES  INALAS/INP(001)  SPECTROSCOPY  WAVELENGTH  INP(001)   Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances 期刊论文  OAI收割 journal of crystal growth, 2003, 卷号: 259, 期号: 1-2, 页码: 1-7 Dong ZY; Zhao YW; Zeng YP; Duan ML; Sun WR; Jiao JH; Lin LY 收藏  |  浏览/下载：351/16  |  提交时间：2010/08/12 annealing  defects  etching  semiconducting indium phosphide  FE-DOPED INP  SEMIINSULATING INP  INDIUM-PHOSPHIDE  DEFECTS  DIFFUSION  CRYSTALS  WAFERS   Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient 会议论文  OAI收割 iumrs/icem 2002 conference, xian, peoples r china, jun 10-14, 2002 Wang QY; Wang JH; Deng HF; Lin LY 收藏  |  浏览/下载：17/0  |  提交时间：2010/11/15 neutron irradiation  annealing  defects in silicon  SPECTRA   Photoluminescence of Mg-doped GaN grown by metalorganic chemical vapor deposition 期刊论文  OAI收割 journal of vacuum science & technology a, 2003, 卷号: 21, 期号: 4, 页码: 838-841 Qu BZ; Zhu QS; Sun XH; Wan SK; Wang ZG; Nagai H; Kawaguchi Y; Hiramatsu K; Sawaki N 收藏  |  浏览/下载：291/4  |  提交时间：2010/08/12 P-TYPE GAN  LIGHT-EMITTING-DIODES  LOCALIZED EXCITONS  GALLIUM NITRIDE  FILMS  DEFECTS  LUMINESCENCE  COMPENSATION  SPECTROSCOPY  ACCEPTORS   Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers 会议论文  OAI收割 9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001 Zhao YW; Sun NF; Dong HW; Jiao JH; Zhao JQ; Sun TN; Lin LY 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 indium phosphide  semi-insulating  annealing  PICTS  photoluminescence  SEMIINSULATING INP  INDIUM-PHOSPHIDE  FE  PHOTOLUMINESCENCE  TEMPERATURE