机构

• 半导体研究所 [14]

采集方式

• OAI收割 [14]

内容类型

• 期刊论文 [12]
• 会议论文 [2]

发表日期

• 2006 [2]
• 2004 [1]
• 2003 [4]
• 2002 [7]

学科主题

• 半导体材料 [9]
• 半导体物理 [5]

筛选

浏览/检索结果: 共14条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Origin of deep level defect related photoluminescence in annealed InP 期刊论文  OAI收割 journal of applied physics, 2006, 卷号: 100, 期号: 12, 页码: art.no.123519 Zhao, YW (Zhao, Youwen); Dong, ZY (Dong, Zhiyuan); Miao, SS (Miao, Shanshan); Deng, AH (Deng, Aihong); Yang, J (Yang, Jun); Wang, B (Wang, Bo) 收藏  |  浏览/下载：67/0  |  提交时间：2010/03/29 DOPED SEMIINSULATING INP   Electron irradiation-induced defects in InP pre-annealed at high temperature 期刊论文  OAI收割 materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 380-383 Zhao YW (Zhao Y. W.); Dong ZY (Dong Z. Y.); Deng AH (Deng A. H.) 收藏  |  浏览/下载：53/0  |  提交时间：2010/04/11 indium phosphide  defect  irradiation  THERMALLY STIMULATED CURRENT  UNDOPED SEMIINSULATING INP  DEEP-LEVEL DEFECTS  FRENKEL PAIRS  FE  SPECTROSCOPY  PHOSPHIDE  AMBIENT  TRAPS   Annealing ambient controlled deep defect formation in InP 会议论文  OAI收割 10th international conference on defects - recognition, imaging and physics in semiconductors (drip 10), batz sur mer, france, sep 29-oct 02, 2003 Zhao YW; Dong ZY; Duan ML; Sun WR; Zeng YP; Sun NF; Sun TN 收藏  |  浏览/下载：33/1  |  提交时间：2010/10/29 FE-DOPED INP  SEMIINSULATING INP  POINT-DEFECTS  PRESSURE  WAFERS  TRAPS   Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy 期刊论文  OAI收割 journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 364-369 Dong HW; Zhao YW; Zeng YP; Jiao JH; Li JM; Lin LY 收藏  |  浏览/下载：53/0  |  提交时间：2010/08/12 diffusion  interfaces  substrates  molecular beam epitaxy  phosphides  semiconducting indium phosphide  UNDOPED SEMIINSULATING INP  CHEMICAL-VAPOR-DEPOSITION  PHOSPHIDE VAPOR  FE  INTERFACE  PHOTOLUMINESCENCE  WAFER  UNIFORMITY  DIFFUSION  PRESSURE   Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances 期刊论文  OAI收割 journal of crystal growth, 2003, 卷号: 259, 期号: 1-2, 页码: 1-7 Dong ZY; Zhao YW; Zeng YP; Duan ML; Sun WR; Jiao JH; Lin LY 收藏  |  浏览/下载：365/16  |  提交时间：2010/08/12 annealing  defects  etching  semiconducting indium phosphide  FE-DOPED INP  SEMIINSULATING INP  INDIUM-PHOSPHIDE  DEFECTS  DIFFUSION  CRYSTALS  WAFERS   Effects of annealing ambient on the formation of compensation defects in InP 期刊论文  OAI收割 journal of applied physics, 2003, 卷号: 93, 期号: 2, 页码: 930-932 Deng AH; Mascher P; Zhao YW; Lin LY 收藏  |  浏览/下载：42/0  |  提交时间：2010/08/12 UNDOPED SEMIINSULATING INP  LOW FE CONTENT  POSITRON-LIFETIME  PHASE EPITAXY  PRESSURE  VACANCY  INDIUM  ANNIHILATION  PHOSPHIDE  WAFERS   Undoped semi-insulating indium phosphide (InP) and its applications 期刊论文  OAI收割 chinese science bulletin, 2003, 卷号: 48, 期号: 4, 页码: 313-314 Dong HW; Zhao YW; Jiao JH; Zeng YP; Li JM; Lin LY 收藏  |  浏览/下载：65/0  |  提交时间：2010/08/12 SEMIINSULATING INP  WAFER  FE  PHOTOLUMINESCENCE  UNIFORMITY  VAPOR   Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers 会议论文  OAI收割 9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001 Zhao YW; Sun NF; Dong HW; Jiao JH; Zhao JQ; Sun TN; Lin LY 收藏  |  浏览/下载：32/0  |  提交时间：2010/11/15 indium phosphide  semi-insulating  annealing  PICTS  photoluminescence  SEMIINSULATING INP  INDIUM-PHOSPHIDE  FE  PHOTOLUMINESCENCE  TEMPERATURE   Creation and suppression of point defects through a kick-out substitution process of Fe in InP 期刊论文  OAI收割 applied physics letters, 2002, 卷号: 80, 期号: 16, 页码: 2878-2879 Zhao YW; Dong HW; Chen YH; Zhang YH; Jiao JH; Zhao JQ; Lin LY; Fung S 收藏  |  浏览/下载：96/2  |  提交时间：2010/08/12 SEMIINSULATING INP  ZN DIFFUSION  COMPLEXES  PHOSPHIDE  MECHANISM  CRYSTALS   Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour 期刊论文  OAI收割 semiconductor science and technology, 2002, 卷号: 17, 期号: 6, 页码: 570-574 Dong HW; Zhao YW; Lu HP; Jiao JH; Zhao JQ; Lin LY 收藏  |  浏览/下载：63/0  |  提交时间：2010/08/12 FE-DOPED INP  SEMIINSULATING INP  ELECTRICAL-PROPERTIES  ROOM-TEMPERATURE  UNIFORMITY  PRESSURE  INGOT